arXiv subjects

A. A. Gorbatsevich

Publications and source records attributed to A. A. Gorbatsevich.

10 recordsLinked to original sources

arXiv2022

Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP single-photon avalanche diodes

We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating and active reset. We have shown when such solutions are beneficial from the key distribution point of view and enough to use a simple scheme with a snatching comparator. We have also proposed a precise method for measuring the afterpulse and presented a model describing the non-markovian dynamic of this effect. We have demonstrated that our afterpulsing measurement approach makes these measurements less dependent on the parameters of the flow of the diode and the laser pulses power changes, in contrast to the other methods considered in this paper.

quant-ph↗

arXiv2021

Investigation of the dependence of noise characteristics of SPAD on the gate parameters in sine-wave gated single-photon detectors

In this paper, we have investigated a self-developed sine wave gated (SWG) single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We have investigated different gate parameters` influence on the SPD`s noise characteristics. We have admitted that with an increase of gating voltage and constant value of quantum efficiency (QE), the dark count rate (DCR) decreases. There have been made some recommendations to improve SPD`s and whole QKD device's characteristics based on these observations. There have been discovered the quick rise of the DCR value with the increase of gating voltage above some certain value and this value was different for different detectors. It has been shown that universal empirical dependence compilation to connect control and operational parameters of SPD is a non-trivial task.

quant-ph↗

arXiv2018

Collective magnetic response of inhomogeneous nanoisland FeNi films around the percolation transition

By using superconducting quantum interference device (SQUID) magnetometry we investigated anisotropic high-field (H < 7 T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d_c=1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2 T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. The observed magnetization response is determined by the interplay between the paramagnetic- and diamagnetic-like contributions.

cond-mat.str-el↗

arXiv2017

Unified theory of resonances and bound states in the continuum in Hermitian tight-binding models

We study transport properties of an arbitrary two terminal Hermitian system within a tight-binding approximation and derive the expression for the transparency in the form, which enables one to determine exact energies of perfect (unity) transmittance, zero transmittance (Fano resonance) and bound state in the continuum (BIC). These energies correspond to the real roots of two energy-dependent functions that are obtained from two non-Hermitian Hamiltonians: the Feshbach's effective Hamiltonian and the auxiliary Hamiltonian, which can be easily deduced from the effective one. BICs and scattering states are deeply connected to each other. We show that transformation of a scattering state into a BIC can be formally described as a "phase transition" with divergent generalized response function. Design rules for quantum conductors and waveguides are presented, which determine structures exhibiting coalescence of both resonances and antiresonances resulting in the formation of almost rectangular transparency and reflection windows. The results can find applications in construction of molecular conductors, broad band filters, quantum heat engines and waveguides with controllable BIC formation.

cond-mat.other↗

arXiv2016

PT-Symmetry Breaking and Catastrophes in Dissipationless Resonant Tunneling Heterostructures

We study the phenomenon of spontaneous symmetry breaking in dissipationless resonant tunneling heterostructures (RTS). To describe the quantum transport in this system we apply both the nonequilibrium Green function formalism based on a tight-binding model and a numerical solution of the Schroedinger equation within the envelope wavefunction formalism. An auxiliary non-Hermitian Hamiltonian is introduced. Its eigenvalues determine exactly the transparency peak positions. We present a procedure how to construct a family of non-Hermitian Hamiltonians with real eigenvalues. In general these Hamiltonians do not have PT-symmetry. In spatially symmetric RTS the corresponding auxiliary non-Hermitian Hamiltonian becomes PT-symmetric and possesses real eigenvalues, which can coalesce at exceptional points (EP) of Hamiltonian. A coalescence of the auxiliary non-Hermitian Hamiltonian eigenvalues means a coalescence of resonances in RTS, which is accompanied be symmetry breaking of the electron wavefunction probability distribution (at a given direction of the particle flow). We construct a classification of different types of the peak coalescence in terms of the catastrophe theory and investigate the impact of dissipation and asymmetry on these phenomena. Possible applications include sensors and broad-band filters.

cond-mat.mes-hall↗

arXiv2016

PT-symmetry breaking in resonant tunneling heterostructures

We present fermionic model based on symmetric resonant tunneling heterostructure, which demonstrates spontaneous symmetry breaking in respect to combined operations of space inversion (P) and time reversal (T). PT-symmetry breaking manifests itself in resonance coalescence (collapse of resonances). We show that resonant energies are determined by eigenvalues of auxiliary pseudo-Hermitian PT-invariant Hamiltonian.

cond-mat.mes-hall↗

arXiv2005

Hidden Defect Pairs: Objects Invisible in Low-Energy Electron Scattering

Objects composed of lattice defects exist within a one-dimensional tight-binding model whose electron reflection coefficient in the low-energy case is equal to zero. Localized states are absent as well. The effective mass concept explains this not as some kind of reflectionless potential but as homogeneous medium, in which effective object size collapses. Without making effective mass approximations a new type of resonance is observed, in which the reflection coefficient becomes zero at a certain energy.

cond-mat.other↗

arXiv2001

Interface electronic states and boundary conditions for envelope functions

The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functions is derived using the Hermiticity and symmetry requirements. Empirical coefficients in the connection rules play role of material parameters which characterize an internal structure of every particular heterointerface. As an illustration we present the derivation of the most general connection rules for the one-band effective mass and 4-band Kane models. The conditions for the existence of Tamm-like localized interface states are established. It is shown that a nontrivial form of the connection rules can also result in the formation of resonant states. The most transparent manifestation of such states is the resonant tunneling through a single-barrier heterostructure.

cond-mat.mes-hall↗

arXiv1998

Field-asymmetric transverse magnetoresistance in a nonmagnetic quantum-size structure

A new phenomenon is observed experimentally in a heavily doped asymmetric quantum-size structure in a magnetic field parallel to the quantum-well layers - a transverse magnetoresistance which is asymmetric in the field (there can even be a change in sign) and is observed in the case that the structure has a built-in lateral electric field. A model of the effect is proposed. The observed asymmetry of the magnetoresistance is attributed to an additional current contribution that arises under nonequilibrium conditions and that is linear in the gradient of the electrochemical potential and proportional to the parameter characterizing the asymmetry of the spectrum with respect to the quasimomentum.

cond-mat.mtrl-sci↗

arXiv1997

Formation of k-space indirect magnetoexcitons in double-quantum-well direct gap heterostructures

Spectrum of excitons in double-quantum-well structures is calculated in tilted magnetic field. It is shown that spectrum becomes asymmetric in quasimomentum if a transverse in respect to growth direction component of magnetic field is nonzero. A transition from $k$-space direct exciton ground state to $k$-space indirect one accompanied by sharp quenching of photoluminescense is described.

cond-mat.mtrl-sci↗