arXiv subjects

A. A. Shashkin

Publications and source records attributed to A. A. Shashkin.

64 records · Page 4Linked to original sources

arXiv2000

Opening an energy gap in an electron double layer system at integer filling factor in a tilted magnetic field

We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor $ν=3$ and 4, a parallel magnetic field component is found to give rise to opening a gap at the Fermi level. We account for the effect in terms of parallel-field-caused orthogonality breaking of the Landau wave functions with different quantum numbers for two subbands.

cond-mat.mes-hall↗

arXiv2000

Observation of the parallel-magnetic-field-induced superconductor-insulator transition in thin amorphous InO films

We study the response of a thin superconducting amorphous InO film with variable oxygen content to a parallel magnetic field. A field-induced superconductor-insulator transition (SIT) is observed that is very similar to the one in normal magnetic fields. As the boson-vortex duality, which is the key-stone of the theory of the field-induced SIT, is obviously absent in the parallel configuration, we have to draw conclusion about the theory insufficiency.

cond-mat.str-el↗

arXiv2000

Scaling analysis of the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT the two-dimensional scaling behaviour is confirmed, for deeper states in the superconducting phase the SIT scenario changes: in addition to the scaling function that describes the conductivity of fluctuation-induced Cooper pairs, there emerges a temperature-dependent contribution to the film resistance. This contribution can originate from the conductivity of normal electrons.

cond-mat.supr-con↗

arXiv1999

Canted antiferromagnetic phase in a double quantum well in a tilted quantizing magnetic field

We investigate the double-layer electron system in a parabolic quantum well at filling factor $ν=2$ in a tilted magnetic field using capacitance spectroscopy. The competition between two ground states is found at the Zeeman splitting appreciably smaller than the symmetric-antisymmetric splitting. Although at the transition point the system breaks up into domains of the two competing states, the activation energy turns out to be finite, signaling the occurrence of a new insulator-insulator quantum phase transition. We interpret the obtained results in terms of a predicted canted antiferromagnetic phase.

cond-mat.mes-hall↗

arXiv1999

Tunneling measurements of the coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field

We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $ν\leq 1$. Tunnel current-voltage characteristics show that for the double maximum observed in the tunnel resistance at $ν\approx 1$ the pseudogap is linear in energy with a slope that depends on filling factor, magnetic field, and temperature. We give a qualitative account of the filling factor dependence of the pseudogap slope and we confirm the recently reported appearance of another relaxation time for tunneling at $ν\approx 1$. For the tunnel resistance peaks at $ν=1/3$ and 2/3 a completely different behaviour of the current-voltage curves is found and interpreted as manifestation of the fractional gap.

cond-mat.mes-hall↗

arXiv1999

Lateral tunneling through the controlled barrier between edge channels in a two-dimentional electron system

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to be strongly asymmetric and include, apart from a positive tunneling branch, the negative branch that corresponds to the current overflowing the barrier. We establish the barrier height depends linearly on both gate voltage and magnetic field and we describe the data in terms of electron tunneling between the outermost edge channels.

cond-mat.mes-hall↗

arXiv1998

Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous InO films

We have investigated the field-induced superconductivity-destroying quantum transition in amorphous indium oxide films at low temperatures down to 30 mK. It has been found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increasing magnetic field the film resistance drops and approaches in the high-field limit the resistance value at transition point so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs.

cond-mat.str-el↗

arXiv1998

Resistance behavior near the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductivity destroying quantum transition in amorphous In-O films with the onset of superconductivity in zero field at about 2 K. At temperatures down to 30 mK the critical resistance R_c=R(T,B_c) has been found to change approximately linearly with temperature, which is in contradiction to a standard description where zero slope dR_c/dT = 0 is assumed near T=0. To make the data R(T,B) collapse in the vicinity of transition against scaling variable (B-B_c)/T^{1/y}, one has either to allow for the intrinsic temperature dependence of R_c or to postulate the critical field B_c to be temperature-dependent B_c(T)-B_c(0)~T^{1+1/y}. We find that the state on the high-field side of the transition can be both insulating and metallic and we determine the critical index y=1.2.

cond-mat.str-el↗

arXiv1998

Hybridization of electron subbands in a double quantum well at quantizing magnetic field

We employ magnetocapacitance and far-infrared spectroscopy techniques to study the spectrum of the double-layer electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. For gate-bias-controlled asymmetric electron density distributions in this soft two-subband system we observe both individual subband gaps and double layer gaps at integer filling factor $ν$. The bilayer gaps are shown to be either trivial common for two subbands or caused by hybridization of electron subbands in magnetic field. We describe the observed hybrid gaps at $ν=1$ and $ν=2$ within a simple model for the modified bilayer spectrum.

cond-mat.mes-hall↗

arXiv1998

Magnetic-Field-Induced Hybridization of Electron Subbands in a Coupled Double Quantum Well

We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. In this system unbalanced by gate depletion, at temperatures $T\agt 30$ mK we observe two sets of quantum oscillations: one originates from the upper electron subband in the closer-to-the-gate part of the well and the other indicates the existence of common gaps in the spectrum at integer fillings. For the lowest filling factors $ν=1$ and $ν=2$, both the common gap presence down to the point of one- to two-subband transition and their non-trivial magnetic field dependences point to magnetic-field-induced hybridization of electron subbands.

cond-mat.mes-hall↗