arXiv subjects

A. Abbout

Publications and source records attributed to A. Abbout.

5 recordsLinked to original sources

arXiv2025

Graphene/hBN heterostructure based Valley transistor: Dynamic Control of valley current in synchronized nonzero voltages, within the time-dependent regime

Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when influenced by carrier-dependent trapping in the hBN spacer triggered by a localized potential from Kelvin probe force microscopy (KPFM), can exhibit valley transistor behavior under specific conditions. We employ a tight-binding model that self-consistently incorporates a Gaussian-shaped potential to represent the effect of the tip gate. Crucially, we show that the heterostructure functions as a field-effect transistor (FET), with its operation governed by the bias gate (shifting the Fermi level) and the tip-induced potential (breaking electron-hole symmetry via selective trapping of electron or hole quasiparticles). Our results reveal that, under specific lattice geometry, pulse frequency, and gate voltage conditions, the device exhibits valley transistor functionality. The valley current (e.g., I_K1=-K or I_K2=+K) can be selectively controlled by synchronizing the frequencies and polarities of the tip and bias gate voltages. Notably, when both gates are driven with the same polarity, the graphene channel outputs a periodically modulated, pure valley-polarized current. This enables switching between distinct ON/OFF valley current states even at finite bias. Remarkably, when the I_K1=-K current is ON (forward current), the I_K2=+K current is OFF. Reversing the gate polarity inverts this behavior: I_K1=-K turns OFF, while I_K2=+K turns ON (reverse current). These findings pave the way toward low-voltage valley transistors in metal-insulator-semiconductor architectures, offering new avenues for valleytronics and advanced gating technologies.

cond-mat.mes-hall↗

arXiv2023

Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride

Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose an approach for operating valley filtering based on the KPFM-induced potential $U_0$ instead of using external or induced pseudo-magnetic fields in strained graphene. Employing a tight-binding model, we investigate the parameters and rules leading to valley filtering in the presence of a graphene quantum dot (GQD) created by the KPFM tip. This model leads to a resolution of different transport channels in reciprocal space, where the electron transmission probability at each Dirac cone ($K_1$= -K and $K_2$ = +K) is evaluated separately. The results show that U0 and the Fermi energy $E_F$ control (or invert) the valley polarization, if electrons are allowed to flow through a given valley. The resulting valley filtering is allowed only if the signs of $E_F$ and $U_0$ are the same. If they are different, the valley filtering is destroyed and might occur only at some resonant states affected by $U_0$. Additionally, there are independent valley modes characterizing the conductance oscillations near the vicinity of the resonances, whose strength increases with $U_0$ and are similar to those occurring in resonant tunneling in quantum antidots and to the Fabry-Perot oscillations. Using KPFM, to probe the charge carriers, and graphene-based structures to control valley transport, provides an efficient way for attaining valley filtering without involving external or pseudo-magnetic fields as in previous proposals.

cond-mat.mes-hall↗

arXiv2021

Topological Aspects of Antiferromagnets

The long fascination antiferromagnetic materials have exerted on the scientific community over about a century has been entirely renewed recently with the discovery of several unexpected phenomena including various classes of anomalous spin and charge Hall effects and unconventional magnonic transport, but also homochiral magnetic entities such as skyrmions. With these breakthroughs, antiferromagnets standout as a rich playground for the investigation of novel topological behaviors, and as promising candidate materials for disruptive low-power microelectronic applications. Remarkably, the newly discovered phenomena are all related to the topology of the magnetic, electronic or magnonic ground state of the antiferromagnets. This review exposes how non-trivial topology emerges at different levels in antiferromagnets and explores the novel mechanisms that have been discovered recently. We also discuss how novel classes of quantum magnets could enrich the currently expanding field of antiferromagnetic spintronics and how spin transport can in turn favor a better understanding of exotic quantum excitations.

cond-mat.mes-hall↗

arXiv2019

Current-driven skyrmion Depinning in Magnetic Granular Films

We consider current-driven motion of magnetic skyrmions in granular magnetic films. The study uses micromagnetic modeling and phenomenological analysis based on the Thiele formalism. Remarkably, disorder enhances the effective skyrmion Hall effect that depends on the magnitude of the driving force (current density and non-adiabaticity parameter). The origin is sliding motion of the skyrmion along the grain boundaries, followed by pinning and depinning at the grain junctions. A side-jump can occur during this depinning process. In addition, the critical current that triggers the skyrmion motion depends on the relative size of the crystallites with respect to the skyrmion size. Finally, when the skyrmion trajectory is confined along an edge by the non-adiabatic Magnus force, the critical current density can be significantly reduced. Our results imply that narrow nanowires have higher skyrmion mobilities.

cond-mat.mes-hall↗

arXiv2013

A linear nonequilibrium thermodynamics approach to optimization of thermoelectric devices

Improvement of thermoelectric systems in terms of performance and range of applications relies on progress in materials science and optimization of device operation. In this chapter, we focuse on optimization by taking into account the interaction of the system with its environment. For this purpose, we consider the illustrative case of a thermoelectric generator coupled to two temperature baths via heat exchangers characterized by a thermal resistance, and we analyze its working conditions. Our main message is that both electrical and thermal impedance matching conditions must be met for optimal device performance. Our analysis is fundamentally based on linear nonequilibrium thermodynamics using the force-flux formalism. An outlook on mesoscopic systems is also given.

physics.class-ph↗