arXiv subjects

A. Ahad

Publications and source records attributed to A. Ahad.

5 recordsLinked to original sources

arXiv2022

Kinetically Decoupled Electrical and Structural Phase Transitions in VO2

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and concomitant structural phase transition in VO2 is yet to be fully understood. We have investigated the kinetics of the above phase transition behaviors of VO2 with the help of resistivity measurements and Raman spectroscopy. Resistance thermal hysteresis scaling and relaxation measurements across the temperature induced insulator to metal transition reveal the unusual behaviour of this first-order phase transition, whereas Raman relaxation measurements show that the temperature induced structural phase transition in VO2 follows usual behaviour and is consistent with mean field prediction. At higher temperature sweeping rates decoupling of insulator to metal transition and structural phase transition have been confirmed. The observed anomalous first order phase transition behavior in VO2 is attributed to the unconventional quasi particle dynamics, i.e. significantly lowered electronic thermal conductivity across insulator to metal transition, which is confirmed by ultrafast optical pump-probe time domain thermoreflectance measurements.

cond-mat.mtrl-sci↗

arXiv2021

Pressure-induced collapse of ferromagnetism in Nickel

Transition metals, Fe, Co and Ni, are the canonical systems for studying the effect of external perturbations on ferromagnetism. Among these, Ni stands out as it undergoes no structural phase transition under pressure. Here we have investigated the long-debated issue of pressure-induced magnetisation drop in Ni from first-principles. Our calculations confirm an abrupt quenching of magnetisation at high pressures, not associated with any structural phase transition. We find that the pressure substantially enhances the crystal field splitting of Ni-$3d$ orbitals, driving the system towards a new metallic phase violating the Stoner Criterion for ferromagnetic ordering. Analysing the charge populations in each spin channel, we show that the next nearest neighbour interactions play a crucial role in quenching ferromagnetic ordering in Ni and materials alike.

cond-mat.mtrl-sci↗

arXiv2020

Magnetic and orbital correlations in multiferroic CaMn$_7$O$_{12}$ probed by x-ray resonant elastic scattering

The quadruple perovskite CaMn$_7$O$_{12}$ is a topical multiferroic, in which the hierarchy of electronic correlations driving structural distortions, modulated magnetism, and orbital order is not well known and may vary with temperature. x-ray resonant elastic scattering (XRES) provides a momentum-resolved tool to study these phenomena, even in very small single crystals, with valuable information encoded in its polarization- and energy-dependence. We present an application of this technique to CaMn$_7$O$_{12}$. By polarization analysis, it is possible to distinguish superstructure reflections associated with magnetic order and orbital order. Given the high momentum resolution, we resolve a previously unknown splitting of an orbital order superstructure peak, associated with a distinct \textit{locked-in} phase at low temperatures. A second set of orbital order superstructure peaks can then be interpreted as a second-harmonic orbital signal. Surprisingly, the intensities of the first- and second-harmonic orbital signal show disparate temperature and polarization dependence. This orbital re-ordering may be driven by an exchange mechanism, that becomes dominant over the Jahn-Teller instability at low temperature.

cond-mat.mtrl-sci↗

arXiv2019

Mott-Hubbard insulator-metal transition in the VO2 thin film: A combined XAS and resonant PES study

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through temperature dependent XAS and resonant PES measurements we unveil that spectral changes in the d$_{\|}$ states (V 3$\it{d_{x^2-y^2}}$ orbitals) are directly associated with temperature dependent electrical conductivity. Due to presence of the strong electron-electron correlations among the d$_{\|}$ states, across IMT, these states are found to exhibit significant intensity variation compared to insignificant changes in the $π^{\ast}$ and the $σ^{\ast}$ states (which are O 2$\it{p}$ hybridized V 3$\it{d}$ $e_g^π$ and $e_g^σ$ states) in the conduction band. Experimentally obtained values of the correlation parameter (U$_{dd}$ $\sim$ 5.1 eV, intra-atomic V 3$\it{d}$ correlations) and crystal field splitting (10 Dq $\sim$ 2.5 eV) values are used to simulate the V $\it{L_{2,3}}$ edge XAS spectra and an agreement between simulated and experimental spectra also manifests strong correlations. These results unravel that the IMT observed in the VO2 thin film is the Mott-Hubbard insulator-metal transition.

cond-mat.str-el↗

arXiv2019

Role of the V-V dimerization in insulator-metal transition and optical transmittance of pure and doped VO2 thin films

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic applications. Here we report on effects of the W and the Tb doping on the IMT and associated structural, electronic structure and optical properties of the VO2 thin film. Our results show that the W doping significantly lowers IMT temperature ($\sim$ 292 K to $\sim$ 247 K for 1.3\% W to 3.7\% W) by stabilizing the metallic rutile, $\it{R}$, phase while Tb doping does not alter the IMT temperature much and retains the insulating monoclinic, $\it{M1}$, phase at room temperature. It is observed that the W doping albeit significantly reduces the IR switching temperature but is detrimental to the solar modulation ability, contrary to the Tb doping effects where higher IR switching temperature and solar modulation ability is observed. The IMT behavior, electrical conductivity and IR switching behavior in the W and the Tb doped thin films are found to be directly associated with the spectral changes in the V 3$\it{d_{\|}}$ states.

cond-mat.mtrl-sci↗