arXiv subjects

A. Alec Talin

Publications and source records attributed to A. Alec Talin.

At least 19 recordsLinked to original sources

arXiv2026

Imaging nanoscale photocarrier traps in solar water-splitting catalysts

Defects trap photocarriers and hinder solar water splitting. The nanoscale photocarrier transport, trapping, and recombination mechanisms are usually inferred from ensemble-averaged measurements and remain elusive. Because an individual high-performing nanoparticle photocatalyst may outperform the ensemble average, design rules that would otherwise enhance catalytic efficiency remain unclear. Here, we introduce photomodulated electron energy-loss spectroscopy (EELS) in an optically coupled scanning transmission electron microscope (STEM) to map photocarrier localization. Using rhodium-doped strontium titanate (SrTiO3:Rh) solar water-splitting nanoparticles, we directly image the carrier densities concentrated at oxygen-vacancy surface trap states. This is achieved by separating photothermal heating from photocarrier populations through experimental and computational analyses of low-loss spectra. Photomodulated STEM-EELS enables angstrom-scale imaging of defect-induced photocarrier traps and their impact on photocatalytic efficiency.

physics.chem-ph↗

arXiv2026

A self-heating electrochemical cell with nine decades of programmable linear resistance

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution but suffers from limitations due to the programming mechanisms that confine switching to nanoscale constrictions or field-sensitive semiconductor junctions, leading to non-linear current-voltage relationships and errors. Here, we introduce a tunable resistor that is programmed into non-volatile, high-precision resistance states spanning nine orders of magnitude, with linear current-voltage characteristics across the entire range -- significantly improving the performance and widening the application space of resistive memory. A key advance is an electrothermal gate that simultaneously spreads heat and electrochemical reactions during programming to enable large, bulk composition modulation. The volumetric modulation can host thousands of linear resistance states with 100x lower conductance errors than other memory. This enables direct processing of analog signals with high fidelity, and we demonstrate variable-gain amplification, division, and multiplication. Integration with CMOS is used to show resilience to electrical and thermal disturb in arrays and to demonstrate retention of analog levels at <1% average loss for more than 2 months across 100 devices. Simulations indicate matrix multiplication efficiency could approach >1,000 TOPS/W.

cs.ET↗

arXiv2025

Nanoscale and Element-Specific Lattice Temperature Measurements using Core-Loss Electron Energy-Loss Spectroscopy

Measuring nanoscale local temperatures, particularly in vertically integrated and multi-component systems, remains challenging. Spectroscopic techniques like X-ray absorption and core-loss electron energy-loss spectroscopy (EELS) are sensitive to lattice temperature, but understanding thermal effects is nontrivial. This work explores the potential for nanoscale and element-specific core-loss thermometry by comparing the Si L2,3 edge's temperature-dependent redshift against plasmon energy expansion thermometry (PEET) in a scanning TEM. Using density functional theory (DFT), time-dependent DFT, and the Bethe-Salpeter equation, we ab initio model both the Si L2,3 and plasmon redshift. We find that the core-loss redshift occurs due to bandgap reduction from electron-phonon renormalization. Our results indicate that despite lower core-loss signal intensity compared to plasmon features, core-loss thermometry has key advantages and can be more accurate through standard spectral denoising. Specifically, we show that the Varshni equation easily interprets the core-loss redshift for semiconductors, which avoids plasmon spectral convolution for PEET in complex junctions and interfaces. We also find that core-loss thermometry is more accurate than PEET at modeling thermal lattice expansion in semiconductors, unless the specimen's temperature-dependent dielectric properties are fully characterized. Furthermore, core-loss thermometry has the potential to measure nanoscale heating in multi-component materials and stacked interfaces with elemental specificity at length scales smaller than the plasmon's wavefunction.

cond-mat.mtrl-sci↗

arXiv2025

Resolving the Electron Plume within a Scanning Electron Microscope

Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy information of secondary electrons by directly imaging the electron plume generated by the electron beam of the SEM. Leveraging these spectroscopic imaging capabilities, our technique is able to image lateral electric fields across a prototypical silicon p-n junctions and to distinguish differently doped regions, even when buried beyond depths typically accessible by SEM. Intriguingly, the sub-surface sensitivity of this technique reveals unexpectedly strong surface band bending within nominally passivated semiconductor structures, providing useful insights for complex layered component designs, in which interfacial dynamics dictate device operation. These capabilities for non-invasive, multi-modal probing of complicated electronic components are crucial in today's electronic manufacturing but is largely inaccessible even with sophisticated techniques. These results show that seemingly simple SEM can be extended to probe complex and useful material properties.

cond-mat.mtrl-sci↗

arXiv2024

Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600 °C. Through correlative electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

physics.app-ph↗

arXiv2022

Nonvolatile Electrochemical Random-Access Memory Under Short Circuit

Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in-memory computing. In this work, we develop an ECRAM cell with orders of magnitude longer retention than previously achieved, and which we anticipate to exceed 10 years at 85C. We hypothesize that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times.

cs.ET↗

arXiv2022

Tunable intervalence charge transfer in ruthenium Prussian blue analogue enables stable and efficient biocompatible artificial synapses

Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and electronic charge, for flexible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. Retention of programmed states is improved by nearly two orders of magnitude compared to the extensively studied organic polymers, thus reducing the frequency, complexity and energy costs associated with error correction schemes. We demonstrate dopamine detection using RuPBA synapses and biocompatibility with neuronal cells, evoking prospective application for brain-computer interfacing. By application of electron transfer theory to in-situ spectroscopic probing of intervalence charge transfer, we elucidate a switching mechanism whereby the degree of mixed valency between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by DFT.

cond-mat.mtrl-sci↗

arXiv2021

Electrochemical Modeling of GITT Measurements for Improved Solid-State Diffusion Coefficient Evaluation

Galvanostatic Intermittent Titration Technique (GITT) is widely used to evaluate solid-state diffusion coefficients in electrochemical systems. However, the existing analysis methods for GITT data require numerous assumptions, and the derived diffusion coefficients typically are not independently validated. To investigate the validity of the assumptions and derived diffusion coefficients, we employ a direct pulse fitting method for interpreting GITT data that involves numerically fitting an electrochemical pulse and subsequent relaxation to a one-dimensional, single-particle, electrochemical model coupled with non-ideal transport to directly evaluate diffusion coefficients that are independently verified through cycling predictions. Extracted from GITT measurements of the intercalation regime of FeS2 and used to predict the discharge behavior, our non-ideal diffusion coefficients prove to be two orders of magnitude more accurate than ideal diffusion coefficients extracted using conventional methods. We further extend our model to a polydisperse set of particles to show the validity of a single-particle approach when the modeled radius is proportional to the total volume-to-surface-area ratio of the system.

physics.app-ph↗

arXiv2018

Kinetics-Controlled Degradation Reactions at Crystalline LiPON/Li(x)CoO(2) and Crystalline LiPON/Li-metal Interfaces

Detailed understanding of solid-solid interface structure-function relations is critical for the improvement and wide deployment of all solid-state batteries. The interfaces between lithium phosphorous oxynitride ("LiPON") solid electrolyte material and lithium metal anode, between LiPON and Li(x)CoO(2) cathode surfaces, have been reported to generate solid electrolyte interphase ("SEI")-like products and/or disordered regions. Using electronic structure calculations and crystalline LiPON models with atomic-layer-deposition-like stoichiometry, we predict LiPON models with purely P-N-P backbones are kinetically inert towards lithium at room temperature. In contrast, transfer of oxygen atoms from low-energy Li(x)CoO(2) (104) surfaces to LiPON is much faster under ambient conditions. The mechanisms of the primary reaction steps, LiPON motifs that readily react with lithium metal, experimental results on amorphous LiPON to partially corroborate these predictions, and possible mitigation strategies to reduce degradations are discussed. LiPON interfaces are found to be useful case studies for highlighting the importance of kinetics-controlled processes during battery assembly at moderate processing temperatures.

cond-mat.mtrl-sci↗

arXiv2017

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Due to the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2 at room temperature for visible light illumination at zero bias. We also show that these devices suffer from significant ambient reactivity such as the formation of a Te-rich surface region driven by Zr oxidation, as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

cond-mat.mes-hall↗

arXiv2017

Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated Via Conformal Vapor-Phase Chemistry

Thin film solid state lithium-based batteries (TSSBs) are increasingly attractive for their intrinsic safety due to the use of a nonflammable solid electrolyte, cycling stability, and ability to be easily patterned in small form factors. However, existing methods for fabricating TSSBs are limited to planar geometries, which severely limits areal energy density when the electrodes are kept sufficiently thin to achieve high areal power. In order to circumvent this limitation, we report the first successful fabrication of fully conformal, 3D full cell TSSBs formed in micromachined silicon substrates with aspect ratios up to ~10 using atomic layer deposition (ALD) at low processing temperatures (at or below 250C) to deposit all active battery components. The cells utilize a prelithiated LiV$_2$O$_5$ cathode, a very thin (40 - 100 nm) LiPON-like lithium polyphosphazene (Li$_2$PO$_2$N) solid electrolyte, and a SnN$_x$ conversion anode, along with Ru and TiN current collectors. Planar all-ALD solid state cells deliver 37 μAh/cm$^2$μm normalized to the cathode thickness with only 0.02% per-cycle capacity loss for hundreds of cycles. Fabrication of full cells in 3D substrates increases the areal discharge capacity by up to a factor of 9.3x while simultaneously improving the rate performance, which corresponds well to trends identified by finite element simulations of the cathode film. This work shows that the exceptional conformality of ALD, combined with conventional semiconductor fabrication methods, provides an avenue for the successful realization of long-sought 3D TSSBs which provide power performance scaling in regimes inaccessible to planar form factor devices.

physics.chem-ph↗

arXiv2017

Nanoscale Solid State Batteries Enabled By Thermal Atomic Layer Deposition of a Lithium Polyphosphazene Solid State Electrolyte

Several active areas of research in novel energy storage technologies, including three-dimensional solid state batteries and passivation coatings for reactive battery electrode components, require conformal solid state electrolytes. We describe an atomic layer deposition (ALD) process for a member of the lithium phosphorus oxynitride (LiPON) family, which is employed as a thin film lithium-conducting solid electrolyte. The reaction between lithium tert-butoxide (LiO$^t$Bu) and diethyl phosphoramidate (DEPA) produces conformal, ionically conductive thin films with a stoichiometry close to Li$_2$PO$_2$N between 250 and 300$^\circ$C. The P/N ratio of the films is always 1, indicative of a particular polymorph of LiPON which closely resembles a polyphosphazene. Films grown at 300$^\circ$C have an ionic conductivity of $6.51\:(\pm0.36)\times10^{-7}$ S/cm at 35$^\circ$C, and are functionally electrochemically stable in the window from 0 to 5.3V vs. Li/Li$^+$. We demonstrate the viability of the ALD-grown electrolyte by integrating it into full solid state batteries, including thin film devices using LiCoO$_2$ as the cathode and Si as the anode operating at up to 1 mA/cm$^2$. The high quality of the ALD growth process allows pinhole-free deposition even on rough crystalline surfaces, and we demonstrate the fabrication and operation of thin film batteries with the thinnest (<100nm) solid state electrolytes yet reported. Finally, we show an additional application of the moderate-temperature ALD process by demonstrating a flexible solid state battery fabricated on a polymer substrate.

physics.chem-ph↗

arXiv2013

Strong Casimir force reduction through metallic surface nanostructuring

The Casimir force between bodies in vacuum can be understood as arising from their interaction with an infinite number of fluctuating electromagnetic quantum vacuum modes, resulting in a complex dependence on the shape and material of the interacting objects. Becoming dominant at small separations, the force plays a significant role in nanomechanics and object manipulation at the nanoscale, leading to a considerable interest in identifying structures where the Casimir interaction behaves significantly different from the well-known attractive force between parallel plates. Here we experimentally demonstrate that by nanostructuring one of the interacting metal surfaces at scales below the plasma wavelength, an unexpected regime in the Casimir force can be observed. Replacing a flat surface with a deep metallic lamellar grating with sub-100 nm features strongly suppresses the Casimir force and for large inter-surfaces separations reduces it beyond what would be expected by any existing theoretical prediction.

quant-ph↗

arXiv2012

Local Measurements of the Superconducting Pairing Symmetry in CuxBi2Se3

Topological superconductors represent a newly predicted phase of matter that is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of their topological character, topological superconductors support solid-state realizations of Majorana fermions at their boundaries. The recently discovered superconductor CuxBi2Se3 has been theoretically proposed as an odd-parity superconductor in the time-reversal-invariant topological superconductor class and point-contact spectroscopy measurements have reported the observation of zero-bias conductance peaks corresponding to Majorana states in this material. Here we report scanning tunneling spectroscopy (STS) measurements of the superconducting energy gap in CuxBi2Se3 as a function of spatial position and applied magnetic field. The tunneling spectrum shows that the density of states at the Fermi level is fully gapped without any in-gap states. The spectrum is well described by the Bardeen-Cooper-Schrieffer (BCS) theory with a momentum independent order parameter, which suggests that Cu0.2Bi2Se3 is a classical s-wave superconductor contrary to previous expectations and measurements.

cond-mat.supr-con↗

arXiv2011

Efficient terahertz emission from InAs nanowires

We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ultrafast THz spectroscopy and theoretical analysis. Our combined experiments and analysis further indicate that these plasmon modes are specific to high aspect ratio geometries.

cond-mat.mes-hall↗

arXiv2010

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts.

cond-mat.mes-hall↗

arXiv2010

Observation of Space-Charge-Limited Transport in InAs Nanowires

Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge-limited transport and proposes reduced thermal conductivity due to the nanowires polymorphism.

cond-mat.mes-hall↗

arXiv2009

How metal films de-wet substrates - identifying the kinetic pathways and energetic driving forces

We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation.

cond-mat.mtrl-sci↗