SearcharxivSearch

arXiv subjects

A. Batra

Publications and source records attributed to A. Batra.

8 recordsLinked to original sources

Sterile neutrino Dark Matter in the minimal Dirac Seesaw

We study sterile neutrino dark matter in a minimal Type-I Dirac seesaw framework where the states responsible for generating Dirac neutrino masses at tree level can be viable dark matter candidates. A $\mathcal{Z}_6$ symmetry, spontaneously broken to a residual $\mathcal{Z}_3$ by the vacuum expectation value of a singlet scalar, forbids Majorana mass operators and ensures neutrino Diracness. The lightest sterile neutrino is produced non-thermally via freeze-in from decays of Standard Model particles and an additional scalar state. We show that the presence of an additional right-handed mixing angle, $\theta_R$, opens up viable regions of parameter space where the observed dark matter relic abundance can be reproduced while maintaining cosmological stability. This mainly stems from the absence of X-ray astrophysical constraints in our scenario. We further find that the freeze-in production of right-handed neutrinos yields a negligible contribution to $\Delta N_{\rm eff}$, consistent with current cosmological bounds.

hep-ph

Axion framework with color-mediated Dirac neutrino masses

We propose a KSVZ-type axion framework in which vector-like quarks (VLQ) and colored scalars generate Dirac neutrino masses radiatively. The global Peccei-Quinn symmetry (under which the exotic fermions are charged) addresses the strong CP problem and ensures the Dirac nature of neutrinos. The axion also accounts for the observed cosmological dark matter. We systematically explore all viable VLQ representations. Depending on the specific scenario, the framework predicts distinct axion-to-photon couplings, testable through haloscope and helioscope experiments, as well as potentially significant flavor-violating quark-axion interactions.

hep-ph

Axion Paradigm with Color-Mediated Neutrino Masses

We propose a generalized Kim-Shifman-Vainshtein-Zakharov-type axion framework in which colored fermions and scalars act as two-loop Majorana neutrino-mass mediators. The global Peccei-Quinn symmetry under which exotic fermions are charged solves the strong CP problem. Within our general proposal, various setups can be distinguished by probing the axion-to-photon coupling at helioscopes and haloscopes. We also comment on axion dark-matter production in the early Universe.

hep-ph

Dark linear seesaw mechanism

We propose a minimal model where a dark sector, odd under a $\mathcal{Z}_2$ discrete symmetry, is the seed of lepton number violation in the neutrino sector at the loop level, in the context of the linear seesaw mechanism. Neutrino mass suppression stems from a naturally small scalar potential coupling which breaks the lepton number symmetry softly. The fact that we consider (dark) Dirac vector-like neutral leptons, prevents the appearance of other mass terms that could contribute to neutrino masses via alternative mechanisms. We study the dark-matter phenomenology of the model, focusing on the case in which the stable particle is the lightest neutral scalar arising from the dark scalar sector. Prospects for testing our framework with the results of current and future lepton flavour violation searches are also discussed.

hep-ph

Mapping of ion beam induced current changes in FinFETs

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

cond-mat.other

Single-atom doping for quantum device development in diamond and silicon

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. We discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond.

cond-mat.other

Excited-state spectroscopy using single-spin manipulation in diamond

We use single-spin resonant spectroscopy to study the spin structure in the orbital excited-state of a diamond nitrogen-vacancy center at room temperature. We find that the excited state spin levels have a zero-field splitting that is approximately half of the value of the ground state levels, a g-factor similar to the ground state value, and a hyperfine splitting ~20x larger than in the ground state. In addition, the width of the resonances reflects the electronic lifetime in the excited state. We also show that the spin-splitting can significantly differ between NV centers, likely due to the effects of local strain, which provides a pathway to control over the spin Hamiltonian and may be useful for quantum information processing.

quant-ph

Detection of low energy single ion impacts in micron scale transistors at room temperature

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.

cond-mat.other