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A. Bernand-Mantel

Publications and source records attributed to A. Bernand-Mantel.

6 recordsLinked to original sources

Skyrmion stacking in stray field-coupled ultrathin ferromagnetic multilayers

This paper explores the energy landscape of ferromagnetic multilayer heterostructures that feature magnetic skyrmions -- tiny whirls of spins with non-trivial topology -- in each magnetic layer. Such magnetic heterostructures have been recently pursued as possible hosts of room temperature stable magnetic skyrmions suitable for the next generation of low power information technologies and unconventional computing. The presence of stacked skyrmions in the adjacent layers gives rise to a strongly coupled nonlinear system, whereby the induced magnetic field plays a crucial stabilizing role. Starting with the micromagnetic modeling framework, we derive a general reduced energy functional for a fixed number of ultrathin ferromagnetic layers with perpendicular magnetocrystalline anisotropy. We next investigate this energy functional in the regime in which the energy is dominated by the intralayer exchange interaction and formally obtain a finite-dimensional description governed by the energy of a system of one skyrmion per layer as a function of the position, radius and the rotation angle of each of theses skyrmions. For the latter, we prove that energy minimizers exist for all fixed skyrmion locations. We then focus on the simplest case of stray field-coupled ferromagnetic bilayers and completely characterize the energy minimizers. We show that the global energy minimizers exist and consist of two stray field-stabilized Néel skyrmions with antiparallel in-plane magnetization components. We also calculate the energy of two skyrmions of equal radius as a function of their separation distance.

math.AP

The skyrmion switch: turning magnetic skyrmion bubbles on and off with an electric field

Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model, with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy, account for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization.

cond-mat.mtrl-sci

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode.

cond-mat.mtrl-sci

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

cond-mat.mes-hall

Spin-coupled double-quantum-dot behavior inside a single-molecule transistor

We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel configuration, making our system a molecular equivalent to a semiconducting double-quantum-dot system. As the gate voltage is increased the charging of the second dot by an additional electron induces a splitting of the Kondo peak. We discuss possible origins of this effect including a spin transition into a high-spin state.

cond-mat.mes-hall

Spin injection in a single metallic nanoparticle: a step towards nanospintronics

We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a non magnetic cluster.

cond-mat.mtrl-sci