arXiv subjects
Publications and source records attributed to A. Bhattacharya.
A parallel field negative magnetoresistance has been found in quench-condensed ultrathin films of amorphous bismuth in the immediate vicinity of the thickness-tuned superconductor-insulator transition. The effect appears to be a signature of quantum fluctuations of the order parameter associated with the quantum critical point.
The glassy response of thin films of La0.8Ca0.2MnO3 to external magnetic and gated electrostatic fields in a field-effect geometry has been studied at low temperatures. A hierarchical response with irreversible memory effects, non-ergodic time evolution, aging and annealing behavior of the resistance suggest that the dynamics are governed by strain relaxation for both electronic and magnetic perturbations. Cross-coupling of charge, spin, and strain have been exploited to tune the coercivity of an ultrathin manganite film by electrostatic gating.
Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The electric field due to the gate produces a large ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the couple of localized charge to strain. The gate effect and mangetoresistance are interpreted in a consistent framework. The implications for the low temperature behavior of a manganite film in the two dimensional limit are discussed.
Dramatic glass-like behavior involving nonexponential relaxation of in-plane electrical conduction, has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. The effect is found over a narrow range of film thicknesses well on the insulating side of the thickness-tuned superconductor-insulator transition. The simplest explanation of this field-induced glass-like behavior is a Pauli principle blocking of hopping transport between singly occupied states when electrons are polarized by the magnetic field. A second explanation involving weak coupling of superconducting clusters by intercluster interactions of random sign is also discussed.
Conductance-voltage characteristics of epitaxial interfaces between oxide ferromagnets and oxide superconductors have been measured as a function of temperature and magnetic field. Their functional form is similar to that predicted by theories of transport across nearly transparent contacts between highly spin-polarized ferromagnets and d-wave superconductors. However, their magnetic field dependencies scale in striking and unusual ways, challenging our current understanding. Existing theories fail to account for apparent nonequilibium effects that are natural for spin injection in such geometries.
Oscillations in the exchange coupling between ferromagnetic $La_{2/3}Ba_{1/3}MnO_3$ layers with paramagnetic $LaNiO_3$ spacer layer thickness has been observed in epitaxial heterostructures of the two oxides. This behavior is explained within the RKKY model employing an {\it ab initio} calculated band structure of $LaNiO_3$, taking into account strong electron scattering in the spacer. Antiferromagnetically coupled superlattices exhibit a positive current-in-plane magnetoresistance.