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A. Borrás

Publications and source records attributed to A. Borrás.

2 recordsLinked to original sources

Influence of edge Laser-Induced Periodic Surface Structures (LIPSS) on the electrical properties of fs laser-machined ITO microcircuits

Scalable and cost-effective methods for processing transparent electrodes at the microscale are transversal for advancing in electrochemistry, optoelectronics, microfluidics, and energy harvesting. In these fields, the precise fabrication of micrometric circuits plays a critical role in determining device performance and integration with added-value substrates. In this context, Laser Subtractive Manufacturing stands out among microfabrication techniques for its adaptability to diverse materials and complex configurations, as well as its straightforward scalability and affordability nature. However, a challenge in micromachining metals and metal oxides is the inherent formation of LIPSS, which can significantly impair electrical conductivity, particularly when circuit dimensions fall within the micrometer range. Herein, we investigate the micromachining of TCOs using ultrashort pulse laser systems applied to ITO thin films. We analyze the formation of LIPSS at the edges of the micromachined regions associated with the Gaussian distribution of the energy within the laser spot and their impact on the electrical properties depending on the circuit characteristics. Thus, we evaluate the influence of LIPSS orientation and periodicity by fabricating various circuit patterns using femtosecond lasers at green (515 nm) and ultraviolet (343 nm) wavelengths. A correlation between electrical resistivity measurements and structural analysis reveals distinct effects of nanostructure formation depending on the laser source. For green wavelength, the regions where LIPSS are oriented perpendicular to the ITO track exhibit higher resistance, by a factor just above two, compared to those where LIPSS are parallel. Additionally, UV laser processing results in a pronounced reduction of ITO thickness at the boundary between the LIPSS region and the substrate.

cond-mat.mtrl-sci↗

Entanglement and the Lower Bounds on the Speed of Quantum Evolution

The concept of quantum speed limit-time (QSL) was initially introduced as a lower bound to the time interval that a given initial state $ψ_I$ may need so as to evolve into a state orthogonal to itself. Recently [V. Giovannetti, S. Lloyd, and L. Maccone, Phys. Rev. A {\bf 67}, 052109 (2003)] this bound has been generalized to the case where $ψ_I$ does not necessarily evolve into an orthogonal state, but into any other $ψ_F$. It was pointed out that, for certain classes of states, quantum entanglement enhances the evolution "speed" of composite quantum systems. In this work we provide an exhaustive and systematic QSL study for pure and mixed states belonging to the whole 15-dimensional space of two qubits, with $ψ_F$ a not necessarily orthogonal state to $ψ_I$. We display convincing evidence for a clear correlation between concurrence, on the one hand, and the speed of quantum evolution determined by the action of a rather general local Hamiltonian, on the other one.

quant-ph↗