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A. Brun

Publications and source records attributed to A. Brun.

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Effect of chromophore-chromophore electrostatic interactions in the NLO response of functionalized organic-inorganic sol-gel materials

In the last years, important non-linear optical results on sol-gel and polymeric materials have been reported, with values comparable to those found in crystals. These new materials contain push-pull chromophores either incorporated as guest in a high Tg polymeric matrix (doped polymers) or grafted onto the polymeric matrix. These systems present several advantages; however they require significant improvement at the molecular level - by designing optimized chromophores with very large molecular figure of merit, specific to each application targeted. Besides, it was recently stated in polymers that the chromophore-chromophore electrostatic interactions, which are dependent of chromophore concentration, have a strong effect into their non-linear optical properties. This has not been explored at all in sol-gel systems. In this work, the sol-gel route was used to prepare hybrid organic-inorganic thin films with different NLO chromophores grafted into the skeleton matrix. Combining a molecular engineering strategy for getting a larger molecular figure of merit and by controlling the intermolecular dipole-dipole interactions through both: the tuning of the push-pull chromophore concentration and the control of TEOS (Tetraethoxysilane) concentration, we have obtained a r33 coefficient around 15 pm/V at 633 nm for the classical DR1 azo-chromophore and a r33 around 50 pm/V at 831 nm for a new optimized chromophore structure.

cond-mat.mtrl-sci

Probing the interface magnetism in the FeMn/NiFe exchange bias system using magnetic second harmonic generation

Second harmonic generation magneto-optic Kerr effect (SHMOKE) experiments, sensitive to buried interfaces, were performed on a polycrystalline NiFe/FeMn bilayer in which areas with different exchange bias fields were prepared using 5 KeV He ion irradiation. Both reversible and irreversible uncompensated spins are found in the antiferromagnetic layer close to the interface with the ferromagnetic layer. The SHMOKE hysteresis loop shows the same exchange bias field as obtained from standard magnetometry. We demonstrate that the exchange bias effect is controlled by pinned uncompensated spins in the antiferromagnetic layer.

cond-mat.mtrl-sci