arXiv subjects

A. C. Irvine

Publications and source records attributed to A. C. Irvine.

24 records · Page 2Linked to original sources

arXiv2008

Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As

It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography, and electrically by bonding the (Ga,Mn)As sample to a piezoelectric transducer. In this work we show that analogous effects are observed in crystalline components of the anisotropic magnetoresistance (AMR). Lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. In these experiments we also observe new higher order terms in the phenomenological AMR expressions and find that strain variation effects can play important role in the micromagnetic and magnetotransport characteristics of (Ga,Mn)As lateral nanoconstrictions.

cond-mat.mtrl-sci↗

arXiv2008

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high dopings significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approximately 8% of Mn_Ga. Our study elucidates the mechanism controlling the removal of the most detrimental, interstitial Mn defect. The limits and utility of electrical gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so far electric-field effects have been demonstrated on magnetization with tens of Volts applied on a top-gate, field effect transistor structure. In the second part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial density of carriers) of the (Ga,Mn)As and observe a large enhancement of the gating efficiency. We report gatable spintronic characteristics on a series of anisotropic magnetoresistance measurements.

cond-mat.mtrl-sci↗

arXiv2007

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.

cond-mat.mes-hall↗

arXiv2007

Anisotropic Magnetoresistance components in (Ga,Mn)As

Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems.

cond-mat.mes-hall↗

arXiv2007

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current induced switching experiments. We report structure sensitive, current induced in-plane magnetization switchings well below the Curie temperature at critical current densities 10^5 Acm^-2. The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects.

cond-mat.mes-hall↗

arXiv2006

Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics

Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in miniaturization and electro-sensitivity. Spintronics, which is based on manipulating electron spins,delivers high magneto-sensitivity and non-volatile memory effects. So far, major developments in the two fields have followed independent paths with only a few experimental studies of hybrid single-electronic/spintronic devices. Intriguing new effects have been discovered in such devices but these have not, until now, offered the possibility of useful new functionalities. Here we demonstrate a device which shows a new physical effect, Coulomb blockade anisotropic magnetoresistance, and which offers a route to non-volatile, low-field, and highly electro- and magneto-sensitive operation. Since this new phenomenon reflects the magnetization orientation dependence of the classical single-electron charging energy it does not impose constraints on the operational temperature associated with more subtle quantum effects, such as resonant or spin-coherent tunneling.

cond-mat.str-el↗