arXiv subjects

A. D. C. Viegas

Publications and source records attributed to A. D. C. Viegas.

3 recordsLinked to original sources

arXiv2026

Antisymmetric spontaneous resistivity anisotropy due to hard-axis collapse in polycrystalline Co thin films

We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system exhibits distinct remanent resistance levels in both the in-plane longitudinal and transverse voltage responses. In particular, the planar Hall resistance shows multiple stable and reproducible levels at room temperature, enabling the identification of at least three remanent states that can be distinguished and used for information storage. These resistance levels originate from non-uniform magnetic configurations stabilized after the application and removal of the external magnetic field in the hard-axis region. Since this phenomenon remains largely unexplored, we present an incipient study addressing its potential implications from an applied-physics perspective. The observation of such behavior in polycrystalline Co thin films grown on Si substrates suggests a simple and low-cost platform for spintronic memory and sensing devices based on the remanent planar Hall effect.

cond-mat.other↗

arXiv2014

Quantifying magnetic anisotropy dispersion: Theoretical and experimental study of the magnetic properties of anisotropic FeCuNbSiB ferromagnetic films

The Stoner-Wohlfarth model is a traditional and efficient tool to calculate magnetization curves and it can provides further insights on the fundamental physics associated to the magnetic properties and magnetization dynamics. Here, we perform a theoretical and experimental investigation of the quasi-static magnetic properties of anisotropic systems. We consider a theoretical approach which corresponds to a modified version of the Stoner-Wohlfarth model to describe anisotropic systems and a distribution function to express the magnetic anistropy dispersion. We propose a procedure to calculate the magnetic properties for the anisotropic case of the SW model from experimental results of the quadrature of magnetization curves, thus quantifying the magnetic anisotropy dispersion. To test the robustness of the approach, we apply the theoretical model to describe the quasi-static magnetic properties of amorphous FeCuNbSiB ferromagnetic films. We perform calculations and directly compare theoretical results with longitudinal and transverse magnetization curves measured for the films. Thus, our results provide experimental evidence to confirm the validity of the theoretical approach to describe the magnetic properties of anisotropic amorphous ferromagnetic films, revealed by the excellent agreement between numerical calculation and experimental results.

cond-mat.mtrl-sci↗

arXiv2011

Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds.

cond-mat.mtrl-sci↗