arXiv subjects

A. De St. Croix

Publications and source records attributed to A. De St. Croix.

8 recordsLinked to original sources

arXiv2021

Characterisation of SiPM Photon Emission in the Dark

In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020\,nm. For the FBK VUV-HD3, at an over-voltage of $12.1\pm1.0$\,V, we measure a secondary photon yield (number of photons ($γ$) emitted per charge carrier ($e^{-}$)) of $(4.04\pm0.02)\times 10^{-6}$ $γ/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7\pm1.0$\,V, we measure a secondary photon yield of $(8.71\pm0.04)\times 10^{-6}$ $γ/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 don't show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.

physics.ins-det↗

arXiv2021

Event Reconstruction in a Liquid Xenon Time Projection Chamber with an Optically-Open Field Cage

nEXO is a proposed tonne-scale neutrinoless double beta decay ($0νββ$) experiment using liquid ${}^{136}Xe$ (LXe) in a Time Projection Chamber (TPC) to read out ionization and scintillation signals. Between the field cage and the LXe vessel, a layer of LXe ("skin" LXe) is present, where no ionization signal is collected. Only scintillation photons are detected, owing to the lack of optical barrier around the field cage. In this work, we show that the light originating in the skin LXe region can be used to improve background discrimination by 5% over previous published estimates. This improvement comes from two elements. First, a fraction of the $γ$-ray background is removed by identifying light from interactions with an energy deposition in the skin LXe. Second, background from ${}^{222}Rn$ dissolved in the skin LXe can be efficiently rejected by tagging the $α$ decay in the ${}^{214}Bi-{}^{214}Po$ chain in the skin LXe.

physics.ins-det↗

arXiv2019

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon

Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 micrometer micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 deg. incidence of three samples of VUV4 SiPMs is found to be 30.4+/-1.4%, 28.6+/-1.3%, and 28.0+/-1.3%, respectively. The PDE at normal incidence differs by +/-8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.

physics.ins-det↗

arXiv2019

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

physics.ins-det↗

arXiv2019

Measurements of electron transport in liquid and gas Xenon using a laser-driven photocathode

Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semi-transparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser. The charges drift and diffuse in a small chamber at various electric fields and a fixed drift distance of 2.0 cm. At an electric field of 0.5 kV/cm, the measured drift velocities and corresponding temperature coefficients respectively are $1.97 \pm 0.04$ mm/$μ$s and $(-0.69\pm0.05)$\%/K for liquid xenon, and $1.42 \pm 0.03$ mm/$μ$s and $(+0.11\pm0.01)$\%/K for gaseous xenon at 1.5 bar. In addition, we measure longitudinal diffusion coefficients of $25.7 \pm 4.6$ cm$^2$/s and $149 \pm 23$ cm$^2$/s, for liquid and gas, respectively. The quantum efficiency of the gold photocathode is studied at the photon energy of 4.73 eV in liquid and gaseous xenon, and vacuum. These charge transport properties and the behavior of photocathodes in a xenon environment are important in designing and calibrating future large scale noble liquid detectors.

physics.ins-det↗

arXiv2019

Simulation of charge readout with segmented tiles in nEXO

nEXO is a proposed experiment to search for the neutrino-less double beta decay ($0νββ$) of $^{136}$Xe in a tonne-scale liquid xenon time projection chamber (TPC). The nEXO TPC will be equipped with charge collection tiles to form the anode. In this work, the charge reconstruction performance of this anode design is studied with a dedicated simulation package. A multi-variate method and a deep neural network are developed to distinguish simulated $0νββ$ signals from backgrounds arising from trace levels of natural radioactivity in the detector materials. These simulations indicate that the nEXO TPC with charge-collection tiles shows promising capability to discriminate the $0νββ$ signal from backgrounds. The estimated half-life sensitivity for $0νββ$ decay is improved by $\sim$20$~(32)\%$ with the multi-variate~(deep neural network) methods considered here, relative to the sensitivity estimated in the nEXO pre-conceptual design report.

physics.ins-det↗

arXiv2019

Characterization of the Hamamatsu VUV4 MPPCs for nEXO

In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.

astro-ph.IM↗

arXiv2019

Characterization of SiPM Avalanche Triggering Probabilities

Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this paper, we introduce a physics motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs the induced avalanches are electron-driven in the ultra-violet and near-ultra-violet ranges, while they become increasingly hole-driven towards the near-infra-red range. The model has been successfully applied to characterize two Hamamatsu MPPCs and one FBK SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight on the electric field structure within SiPMs, which can explain the limitation of existing devices and be used to optimize the performance of future SiPMs.

physics.ins-det↗