arXiv subjects

A. Dejneka

Publications and source records attributed to A. Dejneka.

14 recordsLinked to original sources

arXiv2025

Electronic localization on the structural inhomogeneities formed due to Bi and Te deficiency in the MBE grown films of AFM topological insulator MnBi2Te4: Evidence from spectroscopic ellipsometry and infrared studies

The intrinsic substitutional and antisite defects cause unintentional doping and shift of the E_F position above the conduction band minimum in the AFM topological insulator (TI) MnBi2Te4. This prevents measurements of the quantum anomalous Hall effect (QAH) and investigation of the topological Dirac states. In the present study, the Mn-Bi-Te films grown by the MBE technique onto Si(111) substrates with decreasing Bi and Te contents and increasing Mn content were investigated by 0.5-6.5 eV spectroscopic ellipsometry. In addition, the 0.004-0.9 eV infrared (IR) transmittance spectra were examined. An effective medium model was used to reproduce the measured ellipsometric angles, Psi(omega) and Delta(omega), of the Mn-Bi-Te films in terms of the constructed model, including film thickness, surface roughness, and volume fractions of two (MnTe and Bi2Te3) or three constituents, the latter being associated with the structural inhomogeneities contribution. The results obtained for the inhomogeneous Mn-Bi-Te films using the three-phase EMA model indicate that the defect-associated optical response systematically shifts to higher photon energies from ~1.95 to ~2.43 eV with decreasing Te and Bi contents and increasing Mn content, pointing out that the electrons become more deeply localized in the formed structural inhomogeneities. The obtained results indicate that the structure of the non-stoichiometric Mn-Bi-Te films is not continuous but represented by regions of nearly stoichiometric MnBi2Te4 phase, which includes hollows or quantum anti-dots (QADs). The measured FIR transmittance spectra for the non-stoichiometric Mn-Bi-Te films show substantially reduced (or absent) contribution(s) from free charge carriers, which supports the relevance of localization effects.

cond-mat.str-el↗

arXiv2023

Bismuth layer properties in the ultrathin Bi-FeNi multilayer films probed by spectroscopic ellipsometry

Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega), the complex (pseudo)dielectric function spectra of the Bi layer were extracted. The obtained results demonstrate that the Bi layer can possess the surface metallic conductivity, which is strongly affected by the morphology and magnetic properties of the nanoisland FeNi layer in the GMR-type Bi-FeNi multilayer structures.

cond-mat.mtrl-sci↗

arXiv2021

Localization Phenomena in Disordered Tantalum Films

Using dc transport and wide-band spectroscopic ellipsometry techniques we study localization phenomena in highly disordered metallic β-Ta films grown by rf sputtering deposition. The dc transport study implies non-metallic behavior (dr/dT<0), with negative temperature coefficient of resistivity (TCR). We found that as the absolute TCR value increased, specifying an elevated degree of disorder, the free charge carrier Drude response decreases, indicating the enhanced charge carrier localization. Moreover, we found that the pronounced changes occur at the extended spectral range, involving not only the Drude resonance, but also the higher-energy Lorentz bands, in evidence of the attendant electronic correlations. We propose that the charge carrier localization, or delocalization, is accompanied by the pronounced electronic band structure reconstruction due to many-body effects, which may be the key feature for understanding the physics of highly disordered metals.

cond-mat.str-el↗

arXiv2021

Localization effects in the disordered Ta interlayer of multilayer Ta-FeNi films: Evidence from dc transport and spectroscopic ellipsometry study

Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extracted from the Drude-Lorentz simulation. The dc transport study of the MLFs implies non-metallic (dr/dT<0) behavior, with negative temperature coefficient of resistivity (TCR). The TCR absolute value increases upon increasing the Ta interlayer thickness, indicating enhanced electron localization. With that, the free charge carrier Drude response decreases. Moreover, the pronounced changes occur at the extended spectral range, involving the higher-energy Lorentz bands. The Drude dc conductivity drops below the weak localization limit for the thick Ta layer. The global band structure reconstruction may indicate the formation of a nearly localized many-body electron state.

cond-mat.str-el↗

arXiv2020

Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers

Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10^3-10^5 Bohr magnetons (μ_B). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.

cond-mat.str-el↗

arXiv2018

Collective magnetic response of inhomogeneous nanoisland FeNi films around the percolation transition

By using superconducting quantum interference device (SQUID) magnetometry we investigated anisotropic high-field (H < 7 T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d_c=1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2 T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. The observed magnetization response is determined by the interplay between the paramagnetic- and diamagnetic-like contributions.

cond-mat.str-el↗

arXiv2017

Electron spin dynamics of Ce$^{3+}$ ions in YAG crystals studied by pulse-EPR and pump-probe Faraday rotation

The spin relaxation dynamics of Ce$^{3+}$ ions in heavily cerium-doped YAG crystals is studied using pulse-electron paramagnetic resonance and time-resolved pump-probe Faraday rotation. Both techniques address the 4$f$ ground state, while pump-probe Faraday rotation provides also access to the excited 5$d$ state. We measure a millisecond spin-lattice relaxation time $T_1$, a microsecond spin coherence time $T_2$ and a $\sim 10$ ns inhomogeneous spin dephasing time $T_2^*$ for the Ce$^{3+}$ ground state at low temperatures. The spin-lattice relaxation of Ce$^{3+}$ ions is due to modified Raman processes involving the optical phonon mode at 125 cm$^{-1}$. The relaxation at higher temperature goes through a first excited level of the $^{2}$F$_{5/2}$ term at about $\hbar ω\approx 228$ cm$^{-1}$. Effects provided by the hyperfine interaction of the Ce$^{3+}$ with the $^{27}$Al nuclei are observed.

cond-mat.mtrl-sci↗

arXiv2015

Impurity-induced Polar States in SrTiO3 Quantum Paraelectric

Short and long range impurity-induced polar ordering in Sr1-xCaxTiO3 with x = 0.014 (SCT-1.4) and SrTi(16O0.0318O0.97)3 (STO-18) single crystals were investigated and discussed on the basis of the light refraction temperature dependences measurements. For SCT-1.4 the temperature dependences of the morphic birefringence and dielectric hysteresis loops were measured. Within the optical indicatrix perturbation approach a method for calculation from polar contributions to the refraction of light of short-range polarization contribution Psh originated by spatial fluctuations is developed for the systems with the coexistence of long and short range polar ordering. The magnitudes and temperature dependences of Psh and long-range spontaneous polarization Ps have been determined in SCT-1.4 and STO-18. The results allowed to characterize quantitatively and to compare contributions of short (Psh) and long (Ps) range ordering in the formation of impurity-induced polar phase in SrTiO3.

cond-mat.mtrl-sci↗

arXiv2014

Optical evidence of quantum rotor orbital excitations in orthorhombic manganites

In magnetic compounds with Jahn-Teller (JT) ions (such as Mn3+ or Cu2+), the ordering of the electron or hole orbitals is associated with cooperative lattice distortions. There the role of JT effect, although widely recognised, is still elusive in the ground state properties. We suggest that, in these materials, there exist elementary excitations whose energy spectrum is described in terms of the total angular momentum eigenstates and is quantised as in quantum rotors found in JT centers. We observed features originating from these excitations in the optical spectra of a model compound LaMnO3 using ellipsometry technique. They appear clearly as narrow sidebands accompanying the electron transition between the JT split orbitals on neighbouring Mn3+ ions, strongly influenced by anisotropic spin correlations. We present these results together with new experimental data on photoluminescence and its kinetics found in LaMnO3, which lend additional support to the ellipsometry implying the existence of the quantum rotor orbital excitations. We note that the discovered elementary excitations of quantum rotors may play an important role in many unusual properties observed in these materials upon doping, such as high-temperature superconductivity and colossal magnetoresistance.

cond-mat.str-el↗

arXiv2014

Anomalous multi-order Raman scattering in LaMnO_3: a signature of a quantum lattice effect in a Jahn-Teller crystal

The multi-order Raman scattering is studied up to a fourth order for a detwinned LaMnO_3 crystal. Based on a comprehensive data analysis of the polarisation-dependent Raman spectra, we show that the anomalous features in the multi-order scattering could be the sidebands on the low-energy mode at about 25 cm-1. We suggest that this low-energy mode stems from the tunneling transition between the potential energy minima arising near the Jahn-Teller Mn3+ ion due to the lattice anharmonicity, and the multi-order scattering is activated by this low-energy electronic motion. The sidebands are dominated by the oxygen contribution to the phonon density-of-states, however, there is an admixture of an additional component, which may arise from coupling between the low-energy electronic motion and the vibrational modes.

cond-mat.str-el↗

arXiv2012

d0 Ferromagnetic Interface Between Non-magnetic Perovskites

We use computational and experimental methods to study d0 ferromagnetism at a charge- imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D electron gas at the interface oxygen 2p orbitals. The charge imbalance overrides doping by vacancies at realistic concentrations. Varying the constituent materials shows ferromagnetism to be a gen- eral property of hole-type d0 perovskite interfaces. Atomically sharp epitaxial d0 SrTiO3/KTaO3, SrTiO3 /KNbO3 and SrTiO3 /NaNbO3 interfaces are found to exhibit ferromagnetic hysteresis at room temperature. We suggest the behavior is due to high density of states and exchange coupling at the oxygen t1g band in comparison with the more studied d band t2g symmetry electron gas.

cond-mat.mtrl-sci↗

arXiv2011

EPR studies of manganese centers in SrTiO3: Non-Kramers Mn3+ ions and spin-spin coupled Mn4+ dimers

X- and Q-band electron paramagnetic resonance (EPR) study is reported on the SrTiO3 single crystals doped with 0.5-at.% MnO. EPR spectra originating from the S = 2 ground state of Mn3+ ions are shown to belong to the three distinct types of Jahn-Teller centres. The ordering of the oxygen vacancies due to the reduction treatment of the samples and consequent formation of oxygen vacancy associated Mn3+ centres are explained in terms of the localized charge compensation. The EPR spectra of SrTiO3: Mn crystals show the presence of next nearest neighbor exchange coupled Mn4+ pairs in the <110> directions.

cond-mat.mtrl-sci↗

arXiv2011

Experimental manifestations of the Nb^{4+}-O^{-} polaronic excitons in KTa_{0.988}Nb_{0.012}O_{3}

The formation of the photo-polaronic excitons in ABO_{3} perovskite type oxides has been detected experimentally by means of the photoinduced electron paramagnetic resonance studies of KTa_{0.998}Nb_{0.012}O_{3} crystals. The corresponding microwave X-band spectrum at T < 10 K consists of a narrow, nearly isotropic signal located at g ~ 2 and a strongly anisotropic component. The first signal, which has a rich structure due to hyperfine interactions with the lattice nuclei, is attributed to the single trapped charge carriers: the electrons and/or the holes. The anisotropic spectrum is caused by the axial centers oriented along the C_{4} pseudo-cubic principal crystalline axes. The spectrum angular dependence can be described well by an axial center with S = 1, g_{\parallel) = 0.82, g_{\perp} = 0.52 and D = 0.44 cm^{-1}. The anisotropic spectrum is attributed to the Nb^{4+}-O^{-} polaronic excitons. The temperature dependence of the anisotropic component is characterized by two activation energies: the internal dynamics activation E_{a1} = 3.7\pm0.5 meV, which makes the EPR spectrum unobservable above 10 K, and the destruction energy E_{a2} = 52\pm4 meV. By comparing the anisotropic photo-EPR spectrum and the photoinduced optical absorption temperature dependencies, we found that the Nb^{4+}-O^{-} polaronic excitons also manifested themselves via the ~0.7 eV wide absorption band arising under UV light excitation in the weakly concentrated KTaO_{3}:Nb crystals.

cond-mat.mtrl-sci↗

arXiv2009

Tensile strain induced changes in the optical spectra of SrTiO3 epitaxial thin films

Effect of biaxial tensile strains on optical functions and band edge transitions of ultra thin epitaxial films was studied using as an example a 13 nm thick SrTiO3 films deposited on KTaO3(100) single-crystal substrates. Optical functions were determined by spectroscopic ellipsometry technique. It was found that tensile strains result in a shift of the low energy band gap optical transitions to higher energies and decrease the refractive index in the visible region. Comparison of the optical spectra for strained SrTiO3 films and for homoepitaxial strain-free SrTiO3:Cr (0.01 %at.) films deposited on SrTiO3(100) single crystalline substrates showed that this shift could not be related to technological imperfections or to reduced thickness. The observed effect is connected with changes in the lowest conduction and in the top valence bands that are due to increase of the in-plane lattice constant and/or onset of polar phase in the tensile strain-induced ultra-thin epitaxial SrTiO3 films.

cond-mat.mtrl-sci↗