arXiv subjects

A. Dorokhov

Publications and source records attributed to A. Dorokhov.

At least 19 recordsLinked to original sources

arXiv2026

Development for the Belle II vertex detector upgrade with depleted monolithic active pixel sensors

The vertex detector upgrade project for the Belle II experiment, based on CMOS depleted monolithic active pixel sensor technology, is planned to be carried out in conjunction with the major modification of the interaction region of the SuperKEKB collider during Long Shutdown 2 from 2032 to 2034. The MAPS sensor, named OBELIX currently under development, is derived from the successor to TJ-Monopix2, with modifications implemented to ensure compatibility with the Belle II trigger system. The new vertex detector consists of two layers of four self-supported consecutive OBELIX sensors, and three layers of discrete OBELIX sensors mounted on mechanical support structures with readout flex circuits attached to the sensors. The detector is arranged cylindrically around the beam pipe at radii ranging from 14 mm to 140 mm. The minimization of the material budget is required in order to enhance physics performance. We present an overview of the project and its latest developments, with particular emphasis on the development of low-material-budget flex circuits employing aluminum conductors.

physics.ins-det↗

arXiv2026

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use the of the TCAD - Allpix Squared duo, among which : the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix Squared) for the precise description of the current induced at the collection electrode and the second (SPICE) to guarantee high precision simulation of the front-end electronics using realistic signal events. Irradiation is also modeled, both from the charge propagation side (charge trapping) and from the front-end response side (high input signal discharge). We have applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade. In this contribution, we detail the key features of the exhaustive simulation flow, present the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

physics.ins-det↗

arXiv2025

The ILD Detector: A Versatile Detector for an Electron-Positron Collider at Energies up to 1 TeV

The International Large Detector, ILD, is a detector concept for an experiment at a future high energy lepton collider. The detector has been optimised for precision physics in a range of energies from 90~GeV to about 1~TeV. ILD features a high precision, large volume combined silicon and gaseous tracking system, together with a high granularity calorimeter, all inside a central solenoidal magnetic field. The paradigm of particle flow has been the guiding principle of the design of ILD. ILD is based mostly on technologies which have been demonstrated by extensive research and test programs. The ILD concept is proposed both for linear and circular lepton collider, be it at CERN or elsewhere. The concept has been developed by a group of nearly 60 institutes from around the world, and offers a well developed and powerful environment for science and technology studies at lepton colliders. In this document, the required performance of the detector, the proposed implementation and the readiness of the different technologies needed for the implementation are discussed.

hep-ex↗

arXiv2025

Performance studies of the CE-65v2 MAPS prototype structure

With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge collection properties of this technology. The latest iteration, the CE-65v2, was produced in different processes (standard, with a low-dose n-type blanket, and blanket with gap between pixels), pixel pitches (15, 18, 22.5 $μ$m), and pixel arrangements (square or staggered). The comparatively large pixel array size of $48\times24$ pixels in CE-65v2 allows the uniformity of the pixel response to be studied, among other benefits. The CE-65v2 chip was characterised in a test beam at the CERN SPS. A first analysis showed that hit efficiencies of $\geq 99\%$ and spatial resolution better than 5 $μ$m can be achieved for all pitches and process variants. For the standard process, thanks to larger charge sharing, even spatial resolutions below 3 $μ$m are reached, in line with vertex detector requirements for the FCC-ee. This contribution further investigates the data collected at the SPS test beam. Thanks to the large sensor size and efficient data collection, a large amount of statistics was collected, which allows for detailed in-pixel studies to see the efficiency and spatial resolution as a function of the hit position within the pixels. Again, different pitches and process variants are compared.

physics.ins-det↗

arXiv2024

The Belle II Detector Upgrades Framework Conceptual Design Report

We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.

hep-ex↗

arXiv2019

Observations on MIMOSIS-0, the first dedicated CPS prototype for the CBM MVD

The Micro Vertex Detector (MVD) of the future Compressed Baryonic Matter (CBM) experiment at FAIR will have to provide a spatial precision of $\sim 5~\rm μm$ in combination with a material budget of 0.3\% - 0.5\% X$_0$ for a full detector station. Simultaneously, it will have to handle the rate and radiation load of operating the fixed target experiment at an average collision rate of 100 kHz (4 - 10 AGeV Au+Au collisions) or 10 MHz (up to 28 GeV p-A collisions). The harsh requirements call for a dedicated detector technology, which is the next generation CMOS Monolithic Active Pixel Sensor MIMOSIS. We report about the requirements for the sensor, introduce the design approach being followed to cope with it and show first test results from a first sensor prototype called MIMOSIS-0 .

physics.ins-det↗

arXiv2016

On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is found that the equation and the measurement results match with each other. By comparing our findings with TCAD simulations, we find that precise simulation models matches the empirical findings while simplified models overestimate the depletion depth dramatically. A potential explanation for this finding is introduced and the consequences for the design of CMOS sensors are discussed.

physics.ins-det↗

arXiv2012

Condensate mechanism of conformal symmetry breaking

The low energy Gell-Mann-Oakes-Renner relation, Higgs particle mass value, and the new observational cosmological data are considered as evidence of the condensate mechanism of conformal symmetry breaking at the quantum level. The condensate mechanism occurs by means of normal ordering of field operators in QCD, Minimal Standard Model of electroweak interactions without the Higgs potential, and the Dirac conformal General Relativity with long range forces.

hep-ph↗

arXiv2007

Design and performance of the silicon sensors for the CMS barrel pixel detector

The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.

physics.ins-det↗

arXiv2006

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

physics.ins-det↗

arXiv2006

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

physics.ins-det↗

arXiv2005

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.

physics.ins-det↗

arXiv2005

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.

physics.ins-det↗

arXiv2005

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.

physics.ins-det↗

arXiv2004

Type inversion in irradiated silicon: a half truth

Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

physics.ins-det↗

arXiv2004

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

physics.ins-det↗

arXiv2003

Tests of silicon sensors for the CMS pixel detector

The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.

physics.ins-det↗

arXiv2001

Kaon physics with a high-intensity proton driver

We study opportunities for future high-precision experiments in kaon physics using a high-intensity proton driver, which could be part of the front-end of a muon storage ring complex. We discuss in particular the rare decays $K_L\toπ^0ν\barν$, $K^+\toπ^+ν\barν$, $K_L\toπ^0e^+e^-$, and lepton-flavour violating modes such as $K_L\toμe$ and $K\toπμe$. The outstanding physics potential and long-term interest of these modes is emphasized. We review status and prospects of current and planned experiments for the processes under consideration, and indicate possible improvements and strategies towards achieving the necessary higher sensitivity. Finally, we outline the machine requirements needed to perform these high-precision kaon experiments in the context of a muon storage ring facility.

hep-ph↗