arXiv subjects

A. Dyrdał

Publications and source records attributed to A. Dyrdał.

18 recordsLinked to original sources

arXiv2025

Exchange and spin-orbit proximity driven topological and transport phenomena in twisted graphene/CrI$_3$ heterostructures

We present results of comprehensive first-principles and kp-method studies of electronic, magnetic, and topological properties of graphene on a monolayer of CrI$_3$. First, we identify a twist angle between the graphene and CrI$_3$, that positions the graphene Dirac cones within the bandgap of CrI$_3$. Then, we derive the low-energy effective Hamiltonian describing electronic properties of graphene Dirac cones. Subsequently, we examine anomalous and valley Hall conductivity and discuss possible topological phase transition from a quantum anomalous Hall insulator to a trivial insulating state, concomitant a change in the magnetic ground state of CrI$_3$. These findings highlight the potential of strain engineering in two-dimensional van der Waals heterostructures for controlling topological and magnetic phases.

cond-mat.mes-hall↗

arXiv2024

Longitudinal magnetoresistance in graphene with random Rashba spin-orbit interaction

We consider longitudinal electronic transport in a graphene monolayer with an external in-plane magnetic field and with extrinsic spin-orbit Rashba interaction. Our main interest is in the in-plane magnetoresistance, observed experimentally. We show, that scattering on Rashba spin-orbit fluctuations leads to a negative magnetoresistance, in agreement with experimental observations. To calculate transport properties we assume an effective model valid for low energy states around the Dirac points, and use the Green function method to derive the electron scattering rate and longitudinal conductivity.

cond-mat.mes-hall↗

arXiv2024

Topological charge and spin Hall effects due to skyrmions in canted antiferromagnets

The topological charge-Hall effect (TCHE) and the topological spin-Hall effect (TSHE), arising from ferromagnetic (FM) and antiferromagnetic (AFM) skyrmions, respectively; can be elucidated through the emergence of spin-dependent Berry gauge fields that affect the adiabatic flow of electrons within the skyrmion texture. TCHE is absent in systems with parity-time (PT) symmetry, such as collinear AFM systems. In this paper, we theoretically study TCHE and TSHE in a canted antiferromagnetic within the diffusive transport regime. Spin canting or weak ferromagnetism in canted AFMs, which break the PT symmetry, may arise, e.g., from strong homogeneous Dzyaloshinskii-Moriya interactions. Using a semiclassical Boltzmann approach, we obtain diffusion equations for the spin and charge accumulations in the presence of finite spin-flip and spin-dependent momentum relaxation times. We show that the weak ferromagnetic moment stemming from spin canting and the subsequent breaking of parity-time symmetry results in the emergence of both finite TCHE and TSHE in AFM systems.

cond-mat.mes-hall↗

arXiv2022

Bilinear planar Hall effect in topological insulators due to spin-momentum locking inhomogeneity

We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonlinear to the external electric field components. The linear term is a conventional planar Hall conductivity which scales quadratically with an external magnetic field, whereas the nonlinear term reveals bilinear behaviour, i.e., changes its sign when either charge current density or in-plane magnetic field orientation is reversed. We have shown that the emergent nonlinear planar Hall effect is a consequence of spin-momentum locking inhomogeneity in the TIs with isotropic energy dispersion and dominates under the conventional planar Hall effect.

cond-mat.mes-hall↗

arXiv2022

Skyrmion lattice hosted in synthetic antiferromagnets and helix modes

Thin ferromagnetic films can possess unconventional magnetic properties, opening a new road for using them in spintronic technologies. In the present work exploiting three different methods, we comprehensively analyze phason excitations of a skyrmion lattice in synthetic antiferromagnets. To analyze phason excitations of the skyrmion lattice, we have constructed an analytical model based on three coupled helices and found a linear gapless mode. Micromagnetic simulations also support this result. Moreover, a similar result has been achieved within the rigid skyrmion lattice model based on the coupled Thiele's equations, when the coupling between skyrmions in different layers of the synthetic antiferromagnetic is comparable to or larger than the intralayer coupling. In addition, we also consider the orbital angular momentum and spin pumping current associated with phason excitations. Due to the gapless excitations in the case of skyrmion lattice, the pumping current is nonzero for the arbitrary frequency of pumping microwaves. In the case of individual skyrmions, no current is pumped when microwave frequency is inside the gap of the spectrum of individual skyrmions.

cond-mat.str-el↗

arXiv2022

Skyrmion Echo in a system of interacting Skyrmions

We consider helical rotation of skyrmions confined in the potentials formed by nano-disks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Due to the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to dephasing of the initial signal. The interaction between skyrmions also can contribute to the dephasing process. However, switching the magnetization direction in the nanodiscs (e.g. by spin transfer torque) also switches the helical rotation of the skyrmions from clockwise to anticlockwise (or vice-versa), and this restores the initial signal (which is the essence of skyrmion echo).

cond-mat.str-el↗

arXiv2022

Bilinear magnetoresistance in topological insulators: role of magnetic disorder

Bilinear magnetoresistance is a nonlinear transport phenomenon that scales linearly with the electric and magnetic fields, and appears in nonmagnetic systems with strong spin-orbit coupling, such as topological insulators (TIs). Using the semiclassical Boltzmann theory and generalized relaxation time approximation, we consider in detail the bilinear magnetoresistance in an effective model describing surface states of three-dimensional topological insulators. We show that the presence of magnetic impurities remarkably modifies the BMR signal. In general, scattering on magnetic impurities reduces magnitude of BMR. Apart from this, an additional modulation of the angular dependence of BMR appears when the spin-dependent component of the impurity potential dominates the scalar one.

cond-mat.mes-hall↗

arXiv2021

Graphene with Rashba spin-orbit interaction and coupling to a magnetic layer: Electron states localized at the domain wall

Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes propagating along the domain wall emerge in the energy gap for each Dirac point, and the modes associated with different Dirac points K and K' are the same. The coefficients describing decay of the corresponding wavefunctions with distance from the domain wall contain generally real and imaginary terms. Numerical results on the local spin density and on the total spin expected in the edge states characterized by the wavenumber $k_y$ are presented and discussed. The Chern number for a single magnetic domain on graphene indicates that the system is in the quantum anomalous Hall phase, with two chiral modes at the edges. In turn, the number of modes localized at the domain wall is determined by the difference in Chern numbers on both sides of the wall. These numbers are equal to 2 and -2, respectively, so there are four modes localized at the domain wall.

cond-mat.mes-hall↗

arXiv2020

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.

cond-mat.mes-hall↗

arXiv2019

Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators

A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.

cond-mat.mes-hall↗

arXiv2019

Conduction of surface electrons in a topological insulator with spatially random magnetization

Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction.

cond-mat.mes-hall↗

arXiv2017

Anomalous, spin, and valley Hall effects in graphene deposited on ferromagnetic substrates

Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the spin, anomalous and valley Hall conductivities we employ certain effective Hamiltonians which have been proposed recently for the hybrid systems under considerations. Both anomalous and valley Hall conductivities have universal values when the Fermi level is inside the energy gap in the electronic spectrum.

cond-mat.mes-hall↗

arXiv2016

Spin-resolved orbital magnetization in Rashba two-dimensional electron gas

We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity.

cond-mat.mes-hall↗

arXiv2016

Spin Hall and spin Nernst effects in a two-dimensional electron gas with Rashba spin-orbit interaction: temperature dependence

Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures.

cond-mat.mes-hall↗

arXiv2014

Thermoelectric effect enhanced by the resonant states in graphene

Thermoelectric effects in graphene are considered theoretically with particular attention paid to the role of impurities. Using the T -matrix method we calculate the impurity resonant states and the momentum relaxation time due to scattering on impurities. The Boltzmann kinetic equation is used to determine the thermoelectric coefficients. It is shown that the resonant impurity states near the Fermi level give rise to a resonant enhancement of the Seebeck coefficient and of the figure of merit $ZT$ . The Wiedemann-Franz ratio deviates from that known for ordinary metals, where this ratio is constant and equal to the Lorentz number. This deviation appears for small chemical potentials and in the vicinity of the resonant states. In the limit of a constant relaxation time, this ratio has been calculated analytically for $μ=0$.

cond-mat.mes-hall↗

arXiv2013

Current-induced spin polarization in graphene due to Rashba spin-orbit interaction

Spin polarization induced by an external electric field in graphene is considered theoretically in the linear response regime. The graphene is assumed to be deposited on a substrate which leads to the spin-orbit interaction of Rashba type. The induced spin polarization is shown to be in the graphene plane and perpendicular to the electric field. However, the spin polarization changes sign when the Fermi level, whose position can be controlled by an external gate voltage, crosses the Dirac points.

cond-mat.mes-hall↗

arXiv2013

Spin Hall effect in AA-stacked bilayer graphene

Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian. The spin Hall conductivity in the linear response regime is determined within the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed, and it is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric field perpendicular to the graphene plane leads then to reduction of the gap width and suppression of the spin Hall insulator phase. The low temperature spin Nernst effect is also calculated from the zero temperature spin Hall conductivity.

cond-mat.mes-hall↗

arXiv2013

Thermally-induced spin polarization of a two dimensional electron gas

Spin polarization of a two-dimensional electron gas with Rashba spin-orbit interaction, induced by a thermo-current, is considered theoretically. It is shown that a temperature gradient gives rise to an in-plane spin polarization of the electron gas, which is normal to the temperature gradient. The low-temperature spin polarization changes sign when the Fermi level crosses bottom edge of the upper electronic subband. We also compare the results with spin polarization induced by an external electric field (current).

cond-mat.mes-hall↗