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A. Eich

Publications and source records attributed to A. Eich.

3 recordsLinked to original sources

Interplay of Charge and Magnetic Orders in SmNiC$_2$ Mediated by Electron-Phonon Interaction

We investigate the interplay between charge density wave (CDW) instabilities and ferromagnetism in SmNiC$_2$ using diffuse and inelastic x-ray scattering together with Raman spectroscopy. We identify a soft acoustic phonon driving the incommensurate CDW (I-CDW) and uncover a second Kohn anomaly at the wave vector of the commensurate CDW (C-CDW) stabilized in other $R$NiC$_2$ members ($R=$ rare earth). The marked softening of both phonons and their contrasting evolution with temperature reveal a competition between the two ordering tendencies. Alongside pronounced anomalies in the temperature dependence of the zone center and soft phonons, we observe the collective amplitude mode of the CDW, which collapses abruptly as ferromagnetism sets in. Surprisingly, the Kohn anomalies persist in the ferromagnetic state despite the degradation of Fermi-surface nesting conditions. Our experimental findings, supported by ab initio calculations, highlight the central role of the electron-phonon interaction in driving the CDW formation and tuning the balance between competing charge and magnetic orders.

cond-mat.str-el

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.

cond-mat.mes-hall

Controllable magnetic doping of the surface state of a topological insulator

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically doping the topological surface state. For both types of Fe doping, we see no indication of a gap at the Dirac point.

cond-mat.mtrl-sci