arXiv subjects

A. F. Young

Publications and source records attributed to A. F. Young.

At least 19 recordsLinked to original sources

arXiv2025

Hard and soft phase slips in a Fabry-Pérot quantum Hall interferometer

Quantum Hall Fabry-Pérot interferometers are sensitive to the properties of bulk quasiparticles enclosed by the interferometer loop, with the interference phase containing information about both the quasiparticle statistics and the Coulomb-mediated bulk-edge coupling. Previous studies have explored the role of the bulk-edge coupling in an equilibrium picture where quasiparticles enter and exit the interferometer rapidly compared to the timescale over which the interferometer phase is measured. Here, we present data from a monolayer graphene quantum Hall interferometer in the integer quantum Hall regime at $ν= -1$ and $ν= -2$. Quantum interference shows phase slips associated with the entrance of quasiparticles to the interferometer bulk. Tracing the dependence of these phase slips on the magnetic field, we show that the equilibration time can become as long as several minutes. We further use our multi-gated geometry to identify two classes of phase slips. The first is associated with the addition of a quasiparticle to a bulk `puddle' of quasiparticles uniformly coupled to the entire chiral edge state, while the second is associated with the addition of a quasiparticle trapped by a defect site that couples predominantly to the closest portion of the edge.

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arXiv2025

Enhanced shot noise in graphene quantum point contacts with electrostatic reconstruction

Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge excitations. In this letter, we describe shot noise measurements in a graphene quantum point contact in the quantum Hall regime. At large magnetic field, the competition between confinement and electronic interactions gives rise to a quantum dot located at the saddle point of the quantum point contact. We show that the presence of this quantum dot leads to a $50-100~\%$ increase in the shot noise, which we attribute to correlated charge tunneling. Our results highlight the role played by the electrostatic environment in those graphene devices.

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arXiv2022

Intrinsic spin Hall torque in a moire Chern magnet

In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moire superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe2/WSe2 and other moire materials. The switching current density of 10^3 Amps per square centimeter is significantly less than reported in other platforms paving the way for efficient control of magnetic order.

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arXiv2020

Imaging orbital ferromagnetism in a moiré Chern insulator

Electrons in moiré flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such system composed of twisted bilayer graphene aligned to hexagonal boron nitride. We find a magnetization of several Bohr magnetons per charge carrier, demonstrating that the magnetism is primarily orbital in nature. Our measurements reveal a large change in the magnetization as the chemical potential is swept across the quantum anomalous Hall gap consistent with the expected contribution of chiral edge states to the magnetization of an orbital Chern insulator. Mapping the spatial evolution of field-driven magnetic reversal, we find a series of reproducible micron scale domains whose boundaries host chiral edge states.

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arXiv2020

Imaging the breakdown of ohmic transport in graphene

Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center magnetometry to directly image the local breakdown of Ohm's law in a narrow constriction fabricated in a high mobility graphene monolayer. Ohmic flow is visible at room temperature as current concentration on the constriction edges, with flow profiles entirely determined by sample geometry. However, as the temperature is lowered below 200 K, the current concentrates near the constriction center. The change in the flow pattern is consistent with a crossover from diffusive to viscous electron transport dominated by electron-electron scattering processes that do not relax current.

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arXiv2020

Linear magneto-electric phase in ultrathin MnPS$_{3}$ probed by optical second harmonic generation

The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der Waals materials. However, it is unknown whether this unique magnetic structure of bulk MnPS$_3$ remains stable in the ultrathin limit. Using optical second harmonic generation rotational anisotropy, we show that long-range linear magneto-electric type N$\acute{\textrm{e}}$el order in MnPS$_3$ persists down to at least 5.3 nm thickness. However an unusual mirror symmetry breaking develops in ultrathin samples on SiO$_2$ substrates that is absent in bulk materials, which is likely related to substrate induced strain.

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arXiv2019

Intrinsic quantized anomalous Hall effect in a moiré heterostructure

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.

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arXiv2019

Phonon scattering dominated electron transport in twisted bilayer graphene

Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $θ\approx1.1^\circ$. At low temperature a variety of phases are observed that appear to be driven by electron interactions including insulating states, superconductivity, and magnetism. Electrical transport in the high temperature regime has received less attention but is also highly anomalous, exhibiting gigantic resistance enhancement and non-monotonic temperature dependence. Here we report on the evolution of the scattering mechanisms in tBLG over a wide range of temperature and for twist angle varying from 0.75$^\circ$ - 2$^\circ$. We find that the resistivity, $ρ$, exhibits three distinct phenomenological regimes as a function of temperature, $T$. At low $T$ the response is dominated by correlation and disorder physics; at high $T$ by thermal activation to higher moiré subbands; and at intermediate temperatures $ρ$ varies linearly with $T$. The $T$-linear response is much larger than in monolayer graphenefor all measured twist angles, and increases by more than three orders of magnitude for $θ$ near the flat-band condition. Our results point to the dominant role of electron-phonon scattering in twisted layer systems, with possible implications for the origin of the observed superconductivity.

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arXiv2019

Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect

Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC in ultra-clean \textit{bilayer} graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct incompressible, gapped phase at charge neutrality. The experimental data agrees quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time reversal invariant topological insulator, despite being separated from conventional band insulators by electric field tuned phase transitions where crystal symmetry mandates that the bulk gap must close. Electrical transport measurements, conspicuously, reveal that the inverted phase has a conductivity $\sim e^2/h$, which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inversted phase, that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures.

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arXiv2017

Even denominator fractional quantum Hall states at an isospin transition in monolayer graphene

Magnetic fields quench the kinetic energy of two dimensional electrons, confining them to highly degenerate Landau levels. In the absence of disorder, the ground state at partial Landau level filling is determined only by Coulomb interactions, leading to a variety of correlation-driven phenomena. Here, we realize a quantum Hall analog of the Neél-to-valence bond solid transition within the spin- and sublattice- degenerate monolayer graphene zero energy Landau level by experimentally controlling substrate-induced sublattice symmetry breaking. The transition is marked by unusual isospin transitions in odd denominator fractional quantum Hall states for filling factors $ν$ near charge neutrality, and the unexpected appearance of incompressible even denominator fractional quantum Hall states at $ν=\pm1/2$ and $\pm1/4$ associated with pairing between composite fermions on different carbon sublattices.

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arXiv2017

Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system

Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono- and bilayers, and transition-metal dichalcogenides. Here, we present the first direct experimental measurement of valley polarization in a two dimensional electron system, effected via the direct mapping of the valley quantum number onto the layer polarization in bilayer graphene at high magnetic fields. We find that the layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital polarization. Our data can be fit by a model that captures both single particle and interaction induced orbital, valley, and spin anisotropies, providing the most complete model of this complex system to date. Among the newly discovered phases are theoretically unanticipated orbitally polarized states stabilized by skew interlayer hopping. The resulting roadmap to symmetry breaking in bilayer graphene paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two dimensional materials where layer polarization maps to the valley or spin quantum numbers, providing an essential direct probe that is a prerequisite for manipulating these new quantum degrees of freedom.

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arXiv2016

Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer

A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong nonlocal transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Moreover, we investigate these electron-hole bilayers in the fractional quantum Hall regime, where we observe conduction through fractional and integer edge states of opposite chiralities, paving the way towards the realization of 1d helical systems with fractional quantum statistics.

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arXiv2015

Visualization of superparamagnetic dynamics in magnetic topological insulators

Quantized Hall conductance is a generic feature of two dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. Here, we use scanning nanoSQUID magnetic imaging to provide a direct visualization of the dynamics of the quantum phase transition between the two anomalous Hall plateaus in a Cr-doped (Bi,Sb)$_2$Te$_3$ thin film. Contrary to naive expectations based upon macroscopic magnetometry, our measurements reveal a superparamagnetic state formed by weakly interacting magnetic domains with a characteristic size of few tens of nanometers. The magnetic phase transition occurs through random reversals of these local moments, which drive the electronic Hall plateau transition. Surprisingly, we find that the electronic system can in turn drive the dynamics of the magnetic system, revealing a subtle interplay between the two coupled quantum phase transitions.

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arXiv2014

Torque magnetometry of an amorphous-alumina/strontium-titanate interface

We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unlike crystalline LAO, amorphous Al$_2$O$_3$ is nonpolar, indicating that planar magnetism at an oxide interface is possible without the strong internal electric fields generated within the polarization catastrophe model. We discuss our results in the context of current theoretical efforts to explain magnetism in crystalline LAO/STO.

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arXiv2013

Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic systems with novel properties. For example, time reversal symmetry (TRS) endows the massless charge carriers on the surface of a three-dimensional topological insulator with helicity, locking the orientation of their spin relative to their momentum. Weakly breaking this symmetry generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic spin textures. Analogous manipulations of the one-dimensional boundary states of a two-dimensional topological insulator are also possible, but have yet to be observed in the leading candidate materials. Here, we demonstrate experimentally that charge neutral monolayer graphene displays a new type of quantum spin Hall (QSH) effect, previously thought to exist only in TRS topological insulators, when it is subjected to a very large magnetic field angled with respect to the graphene plane. Unlike in the TRS case, the QSH presented here is protected by a spin-rotation symmetry that emerges as electron spins in a half-filled Landau level are polarized by the large in-plane magnetic field. The properties of the resulting helical edge states can be modulated by balancing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneously break the spin-rotation symmetry. In the resulting canted antiferromagnetic (CAF) state, we observe transport signatures of gapped edge states, which constitute a new kind of one-dimensional electronic system with tunable band gap and associated spin-texture.

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arXiv2013

Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure

Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. This interplay between short- and long-wavelength effects results in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality, both of which can be tuned by varying the interlayer alignment. Magnetocapacitance measurements reveal previously unobserved fractional quantum Hall states reflecting the massive Dirac dispersion that results from broken sublattice symmetry. At ultra-high fields, integer conductance plateaus are observed at non-integer filling factors due to the emergence of the Hofstadter butterfly in a symmetry-broken Landau level.

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arXiv2012

Quantum and classical confinement of resonant states in a trilayer graphene Fabry-Perot interferometer

The advent of few-layer graphenes has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The multiple carbon sublattices endow the electronic wavefunctions with pseudospin, a lattice analog of the relativistic electron spin, while the multilayer structure leads to electric field effect tunable electronic bands. Here we use these properties to realize giant conductance oscillations in ballistic trilayer graphene Fabry-Perot interferometers, which result from phase coherent transport through resonant bound states beneath an electrostatic barrier. We cloak these states by selectively decoupling them from the leads, resulting in transport via non-resonant states and suppression of the giant oscillations. Cloaking is achieved both classically, by manipulating quasiparticle momenta with a magnetic field, and quantum mechanically, by locally varying the pseudospin character of the carrier wavefunctions. Our results illustrate the unique potential of trilayer graphene as a versatile platform for electron optics and pseudospintronics.

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arXiv2012

Electronic compressibility of layer polarized bilayer graphene

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D. As a band gap is induced with increasing D, the compressibility minimum at charge neutrality becomes deeper but remains finite, suggesting the presence of localized states within the energy gap. Temperature dependent capacitance measurements show that compressibility is sensitive to the intrinsic band gap. For large displacements, an additional peak appears in the compressibility as a function of density, corresponding to the presence of a 1-dimensional van Hove singularity (vHs) at the band edge arising from the quartic bilayer graphene band structure. For D > 0, the additional peak is observed only for electrons, while D < 0 the peak appears only for holes. This asymmetry that can be understood in terms of the finite interlayer separation and may be useful as a direct probe of the layer polarization.

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