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A. Favron

Publications and source records attributed to A. Favron.

3 recordsLinked to original sources

Suspended graphene variable capacitor

The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays comprising thousands of suspensions were fabricated to give a tunable capacitance of over 10 pF/mm$^2$, higher than that achieved by traditional micro-electromechanical system (MEMS) technologies. A capacitance tuning of 55% was achieved with a 10 V actuating voltage, exceeding that of conventional MEMS parallel plate capacitors. Capacitor behavior was investigated experimentally, and described by a simple theoretical model. Mechanical properties of the graphene membranes were measured independently using Atomic Force Microscopy (AFM). Increased graphene conductivity will enable the application of the compact graphene varactor to radio frequency systems.

cond-mat.mes-hall

Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schrödinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.

cond-mat.mes-hall

Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects

Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein, we investigate the crystal degradation using in-situ Raman and transmission electron spectroscopies and highlight a process involving a photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine states were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.

cond-mat.mes-hall