arXiv subjects

A. Fert

Publications and source records attributed to A. Fert.

At least 37 records · Page 2Linked to original sources

arXiv2015

Skyrmions at room temperature : From magnetic thin films to magnetic multilayers

Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

cond-mat.mtrl-sci↗

arXiv2014

Revisiting the measurement of the spin relaxation time in graphene-based devices

A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected tausf are longer and less dispersed, which leads to a more unified picture of tausf derived from experiments. We also discuss how the correction depends on the parameters of the graphene and contacts.

cond-mat.mes-hall↗

arXiv2014

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future.

cond-mat.mes-hall↗

arXiv2014

Inverse spin Hall effect in a closed loop circuit

We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

cond-mat.mes-hall↗

arXiv2014

Extrinsic spin Hall effects measured with lateral spin valve structures

The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.

cond-mat.mes-hall↗

arXiv2013

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

cond-mat.mtrl-sci↗

arXiv2012

Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion

In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the current injection scheme and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a Néel wall driven by spin Hall Effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.

cond-mat.mtrl-sci↗

arXiv2012

Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys

We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.

cond-mat.mes-hall↗

arXiv2011

Temperature dependence of microwave voltage emission associated to spin-transfer induced vortex oscillation in magnetic tunnel junction

The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the reduced non-linearities compared to the uniform magnetization case, we first observe a linear decrease of linewidth with decreasing temperature. However, this expected behavior no longer applies at lower temperature and a bottom limit of the linewidth is measured.

cond-mat.mtrl-sci↗

arXiv2011

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

cond-mat.mes-hall↗

arXiv2011

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.

cond-mat.mtrl-sci↗

arXiv2011

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

cond-mat.mes-hall↗

arXiv2011

Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency.

cond-mat.mtrl-sci↗

arXiv2011

Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices.

cond-mat.mtrl-sci↗

arXiv2010

Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque

We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities of the vortices. It demonstrates the interest of using coupled dynamics in order to increase the coherence of the microwave signal. Emissions exhibit a linear frequency evolution with perpendicular field, with coherence conserved even at zero magnetic field.

cond-mat.mtrl-sci↗

arXiv2010

Large microwave generation from d.c. driven magnetic vortex oscillators in magnetic tunnel junctions

Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a nanometer scale, CMOS compatible and tunable microwave generator operating at low bias for future wireless communications. Microwave emission generated by the persitent motion of magnetic vortices induced by spin transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, where such vortex oscillations have been observed, the resulting microwave power is much too small. Here we present experimental evidences of spin-transfer induced core vortex precessions in MgO-based magnetic tunnel junctions with similar good spectral quality but an emitted power at least one order of magnitude stronger. More importantly, unlike to others spin transfer excitations, the thorough comparison between experimental results and models provide a clear textbook illustration of the mechanisms of vortex precessions induced by spin transfer.

cond-mat.mtrl-sci↗

arXiv2009

Origin of the spectral linewidth in non linear oscillators based on MgO tunnel junctions

We demonstrate the strong impact of the oscillator agility on the line broadening by studying spin transfer induced microwave emission in MgO-based tunnel junctions with current. The linewidth is almost not affected by decreasing the temperature. At very low currents, a strong enhancement of the linewidth at low temperature is attributed to an increase of the non linearity, probably due to the field-like torque. Finally we evidence that the noise is not dominated by thermal fluctuations but rather by the chaotization of the magnetization system induced by the spin transfer torque.

cond-mat.mtrl-sci↗

arXiv2009

Frequency converter based on nanoscale MgO magnetic tunnel junctions

We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed when the frequency of the input microwave current coincides with the resonance frequency of the magnetization of the active layer. In addition, we demonstrate that frequency conversion is the result of amplitude modulation between the reference signal and the resistance of the MTJ that is fluctuating at the resonance frequency of the magnetization of the active layer.

cond-mat.mtrl-sci↗