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A. Gaier

Publications and source records attributed to A. Gaier.

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Wireless millimeterwave electro-optics on thin film lithium niobate

The rapid growth of global data traffic is accelerating the need for ultra-broadband communication technologies, particularly in cloud infrastructure and emerging 6G wireless systems. Optical computing and quantum information processing also demand fast, scalable ways to interface optical and electronic signals. Integrated electro-optic modulators provide a compact and efficient solution, but extending their operation into the millimeterwave (mmWave) range with wide bandwidth and compatibility with wireless signals remains a significant challenge. Bulky electrical packaging and high mmWave losses remain primary barriers to scalability. Here, we demonstrate a wireless and wideband electro-optic modulation architecture that directly interfaces mmWaves with optical signals, eliminating the need for impedance-matched mmWave probes and cables. By integrating an on-chip antenna with a co-designed transmission line on thin-film lithium niobate platform, we achieve wideband modulation across the WR9.0 (82-125 GHz) and WR2.8 (240-380 GHz) bands. The wideband nature of our modulator enables the device to function as a high-speed detector of mmWave carriers modulated up to 6~GHz and achieves a flat and wide response, a key requirement for 6G and high-speed mmWave sensing. By configuring the antenna-coupled transmission line to operate as a cavity, our wireless platform enables triply resonant electro-optic frequency comb generation with mode spacing of 123.2 GHz and 307.9 GHz. Extracted single-photon electro-optic coupling rates of $g_{0} =2\pi\times 4.98$ kHz and $2\pi\times 9.93$ kHz, at 123.2 and 307.9 GHz, respectively, demonstrate favorable scaling with mmWave frequency. These results introduce a new class of wireless electro-optic devices for high-speed modulation, detection, and frequency comb generation, with impactful applications in communications, sensing, and quantum technologies.

physics.optics

Photonics-integrated terahertz transmission lines

Modern communication and sensing technologies rely on connecting the optical domain with the microwave domain. Terahertz technologies, spanning increased frequencies from 100 GHz to 10 THz, are critical for providing larger bandwidths and faster switching capabilities. Despite progress in high-frequency electronic sources and detectors, these technologies lack a direct link to the optical domain, and face challenges with increasing frequencies (> 1 THz). Nonlinear processes, such as optical rectification, offer potential solutions for terahertz generation but are currently limited to discrete components based on bulk nonlinear crystals, missing out miniaturisation opportunities from integration of optical circuits with terahertz ones. We address this challenge by integrating phase-matched terahertz transmission lines with photonic circuits in a single hybrid architecture on the thin-film lithium niobate~(TFLN) platform. This design demonstrates phase-matched, broadband terahertz emission spanning four octaves (200 GHz to 3.5 THz) through broadband down-conversion of optical signals at telecommunication wavelengths. The micron-sized transmission lines provide terahertz field confinement with minimal radiative loss, enabling compact THz cavities embedded in integrated photonic circuits. This integration is crucial for leveraging photonics' advantages in low-noise, low-loss, and high-speed operations for terahertz generation. Our platform can readily be integrated with other mature photonics components, such as electro-optic modulators, frequency comb sources, or femtosecond sources to pave the way for compact, power-efficient, and frequency-agile broadband sources with applications in telecommunications, spectroscopy, quantum electrodynamics and optical computing.

physics.optics