SearcharxivSearch

arXiv subjects

A. Gao

Publications and source records attributed to A. Gao.

4 recordsLinked to original sources

Stylizing Sparse-View 3D Scenes with Hierarchical Neural Representation

Recently, a surge of 3D style transfer methods has been proposed that leverage the scene reconstruction power of a pre-trained neural radiance field (NeRF). To successfully stylize a scene this way, one must first reconstruct a photo-realistic radiance field from collected images of the scene. However, when only sparse input views are available, pre-trained few-shot NeRFs often suffer from high-frequency artifacts, which are generated as a by-product of high-frequency details for improving reconstruction quality. Is it possible to generate more faithful stylized scenes from sparse inputs by directly optimizing encoding-based scene representation with target style? In this paper, we consider the stylization of sparse-view scenes in terms of disentangling content semantics and style textures. We propose a coarse-to-fine sparse-view scene stylization framework, where a novel hierarchical encoding-based neural representation is designed to generate high-quality stylized scenes directly from implicit scene representations. We also propose a new optimization strategy with content strength annealing to achieve realistic stylization and better content preservation. Extensive experiments demonstrate that our method can achieve high-quality stylization of sparse-view scenes and outperforms fine-tuning-based baselines in terms of stylization quality and efficiency.

cs.CV

Graphene defect formation by extreme ultraviolet generated photoelectrons

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene is not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

cond-mat.mtrl-sci

Extreme ultraviolet radiation induced defects in single-layer graphene

We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and disrupting the network of sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons cleave the sp2 bonds, forming sp3 bonds, leading to defects in graphene.

cond-mat.mtrl-sci

EUV induced defects on few-layer graphene

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

cond-mat.mtrl-sci