arXiv subjects

A. Gruverman

Publications and source records attributed to A. Gruverman.

13 recordsLinked to original sources

arXiv2026

iDART: Interferometric Dual-AC Resonance Tracking nano-electromechanical mapping

Piezoresponse force microscopy (PFM) has established itself as a very successful and reliable imaging and spectroscopic tool for measuring a wide variety of nanoscale electromechanical functionalities. Quantitative imaging of nanoscale electromechanical phenomena requires high sensitivity while avoiding artifacts induced by large drive biases. Conventional PFM often relies on high voltages to overcome optical detection noise, leading to various non-ideal effects including electrostatic crosstalk, Joule heating, and tip-induced switching. To mitigate this situation, we introduce interferometrically detected, resonance-enhanced dual AC resonance tracking (iDART), which combines femtometer-scale displacement sensitivity of quadrature phase differential interferometry with contact resonance amplification. Through this combination, iDART achieves 10x or greater signal-to-noise improvement over current state of the art PFM approaches including both single frequency interferometric PFM or conventional, resonance enhanced PFM using optical beam detection. In this work, we demonstrate a >10x improvement of imaging sensitivity on PZT and Y-HfO. Switching spectroscopy shows similar improvements, where further demonstrates reliable hysteresis loops at small biases, mitigating nonlinearities and device failures that can occur at higher excitation amplitudes. These results position iDART as a powerful approach for probing conventional ferroelectrics with extremely high signal to noise down to weak piezoelectric systems, extending functional imaging capabilities to thin films, 2D ferroelectrics, beyond-CMOS technologies and bio-materials.

cond-mat.mes-hall↗

arXiv2025

Switching on Antiferroelectrics

Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising for applications in energy storage and electrocaloric cooling. However, their defining features (antipolar ground state and double-hysteresis loops) are increasingly challenged: materials with non-collinear and/or hybrid polar-antipolar order have been discovered, and double-hysteresis has been realized in materials without a conventional antipolar ground state. These developments add to the intensifying interest in fundamental and practical aspects of antiferroelectrics, and call for a fresh look at antiferroelectricity. In this Perspective, we provide an updated and all-encompassing definition of antiferroelectricity, discuss material systems with new antipolar orders and/or engineered double hysteresis, and reflect on emergent properties and theoretical approaches. This work casts a bird's eye view on the rapidly evolving trends that are shaping up the research on ferroics with antipolar order.

cond-mat.mtrl-sci↗

arXiv2022

Topological polarization networking in uniaxial ferroelectrics

Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric.

cond-mat.mtrl-sci↗

arXiv2021

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Tip-induced domain protrusion in ferroelectric films with in-plane polarization

Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic forces with specific geometry of the system enables producing the nanoscale domains by-design. Along with that, domain engineering requires mastery of underlying physical mechanisms that govern the domain formation. Here, we present a theoretical description of the domain formation by a scanning probe microscopy tip in a ferroelectric film with strong in-plane anisotropy of polarization. We demonstrate that local charge injection produces wedge-shaped domains that propagate along the anisotropy axis, whereas the tip-written lines of charge generate a comb-like domain structure. The results of our calculations agree with earlier experimental observations and allow for the optimization of the targeted domain structures.

cond-mat.mtrl-sci↗

arXiv2015

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films

Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO$_3$ films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes model tuned by the segregation of defects.

cond-mat.mtrl-sci↗

arXiv2013

High-Symmetry Polarization Domains in Low-Symmetry Ferroelectrics

We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more symmetrical circular harmonics is favored in ferroelectrics with high dielectric constant.

cond-mat.mtrl-sci↗

arXiv2011

Reversal of Ferroelectric Polarization by Mechanical Means

Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric, and therefore exhibit a strong intrinsic coupling between polarization and elastic deformation - a feature widely used in piezoelectric transducers and high-displacement actuators. A less explored and exploited property is flexoelectricity, i.e. the coupling between polarization and a strain gradient. Though flexoelectricity is an old concept (it was discovered in the Soviet Union almost 50 years ago), it is only with the advent of nanotechnology that its full potential is beginning to be realized, as gradients at the nanoscale can be much larger than at the macroscopic scale. Here, we demonstrate that the stress gradient generated by the tip of an atomic force microscope can be used to mechanically switch the polarization in the nanoscale volume of a ferroelectric film. This observation shows that pure mechanical force can be used as a dynamic tool for polarization control, enabling information processing in a new type of multiferroic high-density data storage devices where the memory bits are written mechanically and read electrically.

cond-mat.mes-hall↗

arXiv2009

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable.

cond-mat.mtrl-sci↗

arXiv2008

Vortex Ferroelectric Domains

We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization switching in circular capacitors. This dynamical behavior is modeled using the Landau-Liftshitz-Gilbert equations and found to be in detailed agreement with experiment. This simulation implies rotational motion of polarization in the xy-plane, a Heisenberg-like result supported by the recent model of Naumov and Fu [Phys. Rev. Lett. 98, 077603 (2007)], although not directly measurable by the present quasi-static measurements.

cond-mat.mtrl-sci↗

arXiv2005

Recent Developments in Electromechanical Probing on the Nanoscale: Vector and Spectroscopic Imaging, Resolution, and Molecular Orientation Mapping

Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography. Understanding the local functionality of inorganic ferroelectrics including crystallographic orientation, piezoresponse, elasticity, and mechanisms for polarization switching, requires probing material structure and properties on the level of a single ferroelectric grain or domain. Here, I present recent studies on electromechanical, mechanical, and spectroscopic characterization of ferroelectric materials by Scanning Probe Microscopy. Three-dimensional electromechanical imaging, referred to as Vector Piezoresponse Force Microscopy, is presented. Nanoelectromechanics of PFM, including the structure of coupled electroelastic fields and tip-surface contact mechanics, is analyzed. This establishes a complete continuum mechanics description of the PFM and Atomic Force Acoustic Microscopy imaging mechanisms. Mechanism for local polarization switching is analyzed. The hysteresis loop shape is shown to be determined by the formation of the transient domain below the tip, the size of which increases with the tip bias. Spectroscopic imaging that allows relevant characteristics of switching process, such as imprint bias, pinning strength, remanent and saturation response, is introduced. Finally, resolution in PFM and vector PFM imaging of local crystallographic and molecular orientation and disorder is introduced.

cond-mat.mtrl-sci↗

arXiv2005

Electromechanical Imaging of Biological Systems with Sub-10 nm Resolution

Electromechanical imaging of tooth dentin and enamel has been performed with sub-10 nm resolution using piezoresponse force microscopy. Characteristic piezoelectric domain size and local protein fiber ordering in dentin have been determined. The shape of a single collagen fibril in enamel is visualized in real space and local hysteresis loops are measured. Because of the ubiquitous presence of piezoelectricity in biological systems, this approach is expected to find broad application in high-resolution studies of a wide range of biomaterials.

cond-mat.mtrl-sci↗

arXiv2004

Nanoelectromechanics of Polarization Switching in Piezoresponse Force Microscopy

Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip. It is proposed that the tip-induced domain switching can be mapped on the Landau theory of phase transitions with the domain size as an order parameter. For a point charge interacting with a ferroelectric surface, switching of both first and second order is possible depending on the charge-surface separation. For a realistic tip shape, the domain nucleation process is first order in charge magnitude and polarization switching occurs only above a critical tip bias. In pure ferroelectric or ferroelastic switching, the late stages of the switching process can be described using point charge/force model and arbitrarily large domains can be created; however, the description of the early stages of nucleation process when domain size is comparable with the tip radius of curvature requires exact field structure to be taken into account.

cond-mat.mtrl-sci↗