arXiv subjects

A. H. Castro Neto

Publications and source records attributed to A. H. Castro Neto.

At least 127 records · Page 7Linked to original sources

arXiv2008

The infrared conductivity of graphene

We study the infrared conductivity of graphene at finite chemical potential and temperature taking into account the effect of phonons and disorder due to charged impurities and unitary scatterers. The screening of the long-range Coulomb potential is treated using the random phase approximation coupled to the coherent potential approximation. The effect of the electron-phonon coupling is studied in second-order perturbation theory. The theory has essentially one free parameter, namely, the number of charge impurities per carbon, n^{\rm C}_i. We find an anomalous enhancement of the conductivity in a frequency region that is blocked by Pauli exclusion and an impurity broadening of the conductivity threshold. We also find that phonons induce Stokes and anti-Stokes lines that produce an excess conductivity, when compared to the far infrared value of σ_0 = (π/2) e^2/h.

cond-mat.mes-hall↗

arXiv2008

Surface dissipation in nanoelectromechanical systems: Unified description with the standard tunneling model and effects of metallic electrodes

By modifying and extending recent ideas [C. Seoanez et al., Europhys. Lett. 78, 60002 (2007)], a theoretical framework to describe dissipation processes in the surfaces of vibrating micro- and nanoelectromechanical devices, thought to be the main source of friction at low temperatures, is presented. Quality factors as well as frequency shifts of flexural and torsional modes in doubly clamped beams and cantilevers are given, showing the scaling with dimensions, temperature, and other relevant parameters of these systems. Full agreement with experimental observations is not obtained, leading to a discussion of limitations and possible modifications of the scheme to reach a quantitative fitting to experiments. For nanoelectromechanical systems covered with metallic electrodes, the friction due to electrostatic interaction between the flowing electrons and static charges in the device and substrate is also studied.

cond-mat.mes-hall↗

arXiv2008

Electrostatic interactions between graphene layers and their environment

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface, and water molecules, which may form layers between the graphene sheet and the substrate. The strength of the interactions implies that graphene is pinned to the substrate at distances greater than a few lattice spacings. The implications for graphene nanoelectromechanical systems, and for the interaction between graphene and a STM tip are also considered.

cond-mat.mtrl-sci↗

arXiv2008

The electronic properties of graphene

This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. We show that the Dirac electrons behave in unusual ways in tunneling, confinement, and integer quantum Hall effect. We discuss the electronic properties of graphene stacks and show that they vary with stacking order and number of layers. Edge (surface) states in graphene are strongly dependent on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. We also discuss how different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

cond-mat.other↗

arXiv2008

Electronic properties of bilayer and multilayer graphene

We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent potential approximation and some analytical results. Within the model we compute the self-energies, the density of states and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the DC conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.

cond-mat.mes-hall↗

arXiv2008

Tailoring Graphene with Metals on Top

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive to whether graphene is doped with alkali or transition metals. We estimate the the charge transfer from a single layer of Potassium on top of graphene in terms of the local charging energy of the graphene sheet. The coating of graphene with a non-magnetic layer of Palladium, on the other hand, can lead to a magnetic instability in coated graphene due to the hybridization between the transition-metal and the carbon orbitals.

cond-mat.mtrl-sci↗

arXiv2007

Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors

We show that, due to the weak ferromagnetism of La$_{2-x}$Sr$_x$CuO$_4$, an external magnetic field leads to a dimensional crossover 2D $\to$ 3D for the in-plane transport. The crossover results in an increase of the hole's localization length and hence in a dramatic negative magnetoresistance in the variable range hopping regime. This mechanism quantitatively explains puzzling experimental data on the negative magnetoresistance in the Néel phase of La$_{2-x}$Sr$_x$CuO$_4$.

cond-mat.str-el↗

arXiv2007

Modeling disorder in graphene

We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of graphene, viz. localized zero modes, strong resonances, gap and pseudogap behavior, and non-dispersive midgap zero modes.

cond-mat.dis-nn↗

arXiv2007

Transmission through a biased graphene bilayer barrier

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.

cond-mat.mes-hall↗

arXiv2007

Substrate-induced band gap opening in epitaxial graphene

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.

cond-mat.mtrl-sci↗

arXiv2007

Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

cond-mat.mtrl-sci↗

arXiv2007

Coulomb blockade in graphene nanoribbons

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.

cond-mat.mes-hall↗

arXiv2007

Graphene as an electronic membrane

Experiments are finally revealing intricate facts about graphene which go beyond the ideal picture of relativistic Dirac fermions in pristine two dimensional (2D) space, two years after its first isolation. While observations of rippling added another dimension to the richness of the physics of graphene, scanning single electron transistor images displayed prevalent charge inhomogeneity. The importance of understanding these non-ideal aspects cannot be overstated both from the fundamental research interest since graphene is a unique arena for their interplay, and from the device applications interest since the quality control is a key to applications. We investigate the membrane aspect of graphene and its impact on the electronic properties. We show that curvature generates spatially varying electrochemical potential. Further we show that the charge inhomogeneity in turn stabilizes ripple formation.

cond-mat.other↗

arXiv2007

Phase-locking transition of coupled low-dimensional superfluids

We study the phase-locking transition of two coupled low-dimensional superfluids, either two-dimensional superfluids at finite temperature, or one-dimensional superfluids at zero temperature. We find that the superfluids have a strong tendency to phase-lock. The phase-locking is accompanied by a sizeable increase of the transition temperature $T_{c}$ (in 2D systems) of the resulting double-layer superfluid to thermal Bose gas transition, compared to the Kosterlitz-Thouless temperature $T_{KT}$ of the uncoupled 2D systems, which suggests a plausible way of observing the Kibble-Zurek mechanism in two-dimensional cold atom systems by rapidly varying the tunneling rate between the superfluids. If there is also interaction between atoms in different layers present we find additional phases, while no sliding phase, characterized by order or quasi long range order (QLRO) either in the symmetric or the antisymmetric sector of the system.

cond-mat.other↗

arXiv2007

Making graphene visible

Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of silicon wafers with a certain thickness of silicon dioxide. We study graphene's visibility and show that it depends strongly on both thickness of silicon dioxide and light wavelength. We have found that by using monochromatic illumination, graphene can be isolated for any silicon dioxide thickness, albeit 300 nm (the current standard) and, especially, approx. 100 nm are most suitable for its visual detection. By using a Fresnel-law-based model, we quantitatively describe the experimental data without any fitting parameters.

cond-mat.mes-hall↗

arXiv2007

Dissipation in graphene and nanotube resonators

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

cond-mat.mes-hall↗

arXiv2007

Probing the Electronic Structure of Bilayer Graphene by Raman Scattering

The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.

cond-mat.mtrl-sci↗

arXiv2007

Localized states at zigzag edges of bilayer graphene

We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.

cond-mat.mes-hall↗