arXiv subjects

A. Hoffmann

Publications and source records attributed to A. Hoffmann.

At least 73 records · Page 4Linked to original sources

arXiv2009

Matter Coupling to Strong Electromagnetic Fields in Two-Level Quantum Systems with Broken Inversion Symmetry

We demonstrate theoretically the parametric oscillator behavior of a two-level quantum system with broken inversion symmetry exposed to a strong electromagnetic field. A multitude of resonance frequencies and additional harmonics in the scattered light spectrum as well as altered Rabi frequency are predicted to be inherent to such systems. In particular, dipole radiation at the Rabi frequency appears to be possible. Since the Rabi frequency is controlled by the strength of coupling electromagnetic field, the effect can serve for the frequency-tuned parametric amplification and generation of electromagnetic waves. Manifestation of the effect is discussed for III-nitride quantum dots with strong build-in electric field breaking the inversion symmetry. Terahertz emission from arrays of such quantum dots is shown to be experimentally observable.

quant-ph↗

arXiv2008

GaN/AlN Quantum Dots for Single Qubit Emitters

We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.

cond-mat.mtrl-sci↗

arXiv2008

Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots

We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiative lifetimes on the exact QD geometry and composition. Moreover, the radiative lifetimes also depend heavily on the composition of the direct surrounding of the QDs. A broad lifetime distribution occurs even for moderate variations of the QD structure. Thus, for unscreened fields a multi-exponential decay of the ensemble PL is generally expected in this material system.

cond-mat.mtrl-sci↗

arXiv2008

Strong coupling of light with one-dimensional quantum dot chain: from Rabi oscillations to Rabi waves

Interaction of traveling wave of classic light with 1D-chain of coupled quantum dots (QDs) in strong coupling regime has been theoretically considered. The effect of space propagation of Rabi oscillations in the form of traveling waves and wave packets has been predicted. Physical interpretation of the effect has been given, principles of its experimental observation are discussed.

cond-mat.mes-hall↗

arXiv2008

Contrast Mechanisms for the Detection of Ferroelectric Domains with Scanning Force Microscopy

We present a full analysis of the contrast mechanisms for the detection of ferroelectric domains on all faces of bulk single crystals using scanning force microscopy exemplified on hexagonally poled lithium niobate. The domain contrast can be attributed to three different mechanisms: i) the thickness change of the sample due to an out-of-plane piezoelectric response (standard piezoresponse force microscopy), ii) the lateral displacement of the sample surface due to an in-plane piezoresponse, and iii) the electrostatic tip-sample interaction at the domain boundaries caused by surface charges on the crystallographic y- and z-faces. A careful analysis of the movement of the cantilever with respect to its orientation relative to the crystallographic axes of the sample allows a clear attribution of the observed domain contrast to the driving forces respectively.

cond-mat.mtrl-sci↗

arXiv2008

Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots

Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved.

cond-mat.mtrl-sci↗

arXiv2007

Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides

We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-native to hexagonal crystals. Eight-band k.p calculations reveal a mechanism that can explain the observed polarizations: The character of the hole(s) in an excitonic complex determines the polarization direction of the respective emission if the QD is slightly elongated. Transitions involving A-band holes are polarized parallel to the elongation; transitions involving B-type holes are polarized in the orthogonal direction. The energetic separation of both hole states is smaller than 10 meV. The mechanism leading to the linear polarizations is not restricted to InGaN QDs, but should occur in other wurtzite-nitride QDs and in materials with similar valence band structure.

cond-mat.mtrl-sci↗

arXiv2007

Microscopic theory of quantum dot interactions with quantum light: local field effect

A theory of both linear and nonlinear electromagnetic response of a single QD exposed to quantum light, accounting the depolarization induced local--field has been developed. Based on the microscopic Hamiltonian accounting for the electron--hole exchange interaction, an effective two--body Hamiltonian has been derived and expressed in terms of the incident electric field, with a separate term describing the QD depolarization. The quantum equations of motion have been formulated and solved with the Hamiltonian for various types of the QD excitation, such as Fock qubit, coherent fields, vacuum state of electromagnetic field and light with arbitrary photonic state distribution. For a QD exposed to coherent light, we predict the appearance of two oscillatory regimes in the Rabi effect separated by the bifurcation. In the first regime, the standard collapse--revivals phenomenon do not reveal itself and the QD population inversion is found to be negative, while in the second one, the collapse--revivals picture is found to be strongly distorted as compared with that predicted by the standard Jaynes-Cummings model. %The model developed can easily be extended to %%electromagnetic excitation. For the case of QD interaction with arbitrary quantum light state in the linear regime, it has been shown that the local field induce a fine structure of the absorbtion spectrum. Instead of a single line with frequency corresponding to which the exciton transition frequency, a duplet is appeared with one component shifted by the amount of the local field coupling parameter. It has been demonstrated the strong light--mater coupling regime arises in the weak-field limit. A physical interpretation of the predicted effects has been proposed.

cond-mat.mes-hall↗

arXiv2007

Consequences of the background in piezoresponse force microscopy on the imaging of ferroelectric domain structures

The interpretation of ferroelectric domain images obtained with piezoresponse force microscopy (PFM) is discussed. The influences of an inherent experimental background on the domain contrast in PFM images (enhancement, nulling, inversion) as well as on the shape and the location of the domain boundaries are described. We present experimental results to evidence our analysis of the influence of the background on the domain contrast in PFM images.

cond-mat.mtrl-sci↗

arXiv2007

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.

cond-mat.mtrl-sci↗

arXiv2007

Impact of the tip radius on the lateral resolution in piezoresponse force microscopy

We present a quantitative investigation of the impact of tip radius as well as sample type and thickness on the lateral resolution in piezoresponse force microscopy (PFM) investigating bulk single crystals. The observed linear dependence of the width of the domain wall on the tip radius as well as the independence of the lateral resolution on the specific crystal-type are validated by a simple theoretical model. Using a Ti-Pt-coated tip with a nominal radius of 15 nm the so far highest lateral resolution in bulk crystals of only 17 nm was obtained.

cond-mat.mtrl-sci↗

arXiv2006

Multi-excitonic complexes in single InGaN quantum dots

Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.

cond-mat.mtrl-sci↗

arXiv2006

Crosstalk Correction in Atomic Force Microscopy

Commercial atomic force microscopes usually use a four-segmented photodiode to detect the motion of the cantilever via laser beam deflection. This read-out technique enables to measure bending and torsion of the cantilever separately. A slight angle between the orientation of the photodiode and the plane of the readout beam, however, causes false signals in both readout channels, so-called crosstalk, that may lead to misinterpretation of the acquired data. We demonstrate this fault with images recorded in contact mode on ferroelectric crystals and present an electronic circuit to compensate for it, thereby enabling crosstalk-free imaging.

cond-mat.mtrl-sci↗

arXiv2006

Influence of the inhomogeneous field at the tip on quantitative piezoresponse force microscopy

Ferroelectric domain imaging with piezoresponse force microscopy (PFM) relies on the converse piezoelectric effect: a voltage applied to the sample leads to mechanical deformations. In case of PFM one electrode is realized by the tip, therefore generating a strongly inhomogeneous electric field distribution inside the sample which reaches values up to $10^8 $V/m directly underneath the apex of the tip. Although often assumed, this high electric field does not lead to an enhancement of the piezoelectric deformation of the sample. On the contrary, internal clamping of the material reduces the observed deformation compared to the theoretically expected value which depends only on the voltage thus being independent of the exact field distribution.

cond-mat.mtrl-sci↗

arXiv2006

Detection mechanism for ferroelectric domain boundaries with lateral force microscopy

The contrast mechanism for the visualization of ferroelectric domain boundaries with lateral force microscopy is generally assumed to be caused by mechanical deformation of the sample due to the converse piezoelectric effect. We show, however, that electrostatic interactions between the charged tip and the electric fields arising from the surface polarization charges dominate the contrast mechanism. This explanation is sustained by quantitative analysis of the measured forces as well as by comparative measurements on different materials.

cond-mat.mtrl-sci↗

arXiv2005

Quantitative analysis of ferroelectric domain imaging with piezoresponse force microscopy

The contrast mechanism for ferroelectric domain imaging via piezoresponse force microscopy (PFM) is investigated. A novel analysis of PFM measurements is presented which takes into account the background caused by the experimental setup. This allows, for the first time, a quantitative, frequency independent analysis of the domain contrast which is in good agreement with the expected values for the piezoelectric deformation of the sample and satisfies the generally required features of PFM imaging.

cond-mat.mtrl-sci↗

arXiv2005

Suppressed magnetization in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ superlattices

We studied the magnetic properties of La$_{0.7}$Ca$_{0.3}$MnO$_3$ / YBa$_2$Cu$_3$O$_{7-δ}$ superlattices. Magnetometry showed that with increasing YBa$_2$Cu$_3$O$_{7-δ}$ layer thickness the saturation magnetization per La$_{0.7}$Ca$_{0.3}$MnO$_3$ layer decreases. From polarized neutron reflectometry we determined that this magnetization reduction is due to an inhomogenous magnetization depth profile arising from the suppression of magnetization near the La$_{0.7}$Ca$_{0.3}$MnO$_3$ / YBa$_2$Cu$_3$O$_{7-δ}$ interface. Electron energy loss spectroscopy indicates an increased 3d band occupation of the Mn atoms in the La$_{0.7}$Ca$_{0.3}$MnO$_3$ layers at the interface. Thus, the suppression of ferromagnetic order at the La$_{0.7}$Ca$_{0.3}$MnO$_3$ / YBa$_2$Cu$_3$O$_{7-δ}$ interface is most likely due to charge transfer between the two materials.

cond-mat.mtrl-sci↗

arXiv2004

Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As

We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn at interstitial sites during the annealing process. Also, we have seen evidence of significant magnetization depletion at the surface of both as-grown and annealed films.

cond-mat.mtrl-sci↗