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A. J. Brash

Publications and source records attributed to A. J. Brash.

5 recordsLinked to original sources

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

Telecom wavelength quantum dots (QDs) are emerging as a promising solution for generating deterministic single photons compatible with existing fiber optic infrastructure. Emission in the low loss C band minimizes transmission losses, making them ideal for long distance quantum communication. In this work, we present a demonstration of both Stark tuning and charge state control of individual InAs/InP QDs operating within the telecom C-band. These QDs are grown by droplet epitaxy and embedded in an InP based n++-i-n+ heterostructure fabricated using MOVPE. The gated architecture enables the tuning of emission energy via the quantum confined Stark effect, with a tuning range exceeding 2.4 nm. It also allows for control over the QD charge occupancy, enabling access to multiple discrete excitonic states. Electrical tuning of the fine structure splitting is further demonstrated, opening a route to entangled photon pair generation at telecom wavelengths. The single photon character is confirmed via second order correlation measurements. These advances enable QDs to be tuned into resonance with other systems, such as cavity modes and emitters, marking a critical step toward scalable, fiber compatible quantum photonic devices.

quant-ph

High Purcell factor generation of coherent on-chip single photons

On-chip single-photon sources are key components for integrated photonic quantum technologies. Semiconductor quantum dots can exhibit near-ideal single-photon emission but this can be significantly degraded in on-chip geometries owing to nearby etched surfaces. A long-proposed solution to improve the indistinguishablility is by using the Purcell effect to reduce the radiative lifetime. However, until now only modest Purcell enhancements have been observed. Here we use pulsed resonant excitation to eliminate slow relaxation paths, revealing a highly Purcell-shortened radiative lifetime (22.7 ps) in a waveguide-coupled quantum dot-photonic crystal cavity system. This leads to near-lifetime-limited single-photon emission which retains high indistinguishablility (93.9%) on a timescale in which 20 photons may be emitted. Nearly background-free pulsed resonance fluorescence is achieved under $π$-pulse excitation, enabling demonstration of an on-chip, on-demand single-photon source with very high potential repetition rates.

quant-ph

Dynamic vibronic coupling in InGaAs quantum dots

The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic phonons can be dynamically enhanced in the presence of an intense optical pulse tuned within the phonon sideband. Recent experiments have shown that this dynamic vibronic coupling can enable population inversion to be achieved when pumping with a blue-shifted laser and for rapid de-excitation of an inverted state with red detuning. In this paper we confirm the incoherent nature of the phonon-assisted pumping process and explore the temperature dependence of the mechanism. We also show that a combination of blue- and red-shifted pulses can create and destroy an exciton within a timescale ~20 ps determined by the pulse duration and ultimately limited by the phonon thermalisation time.

cond-mat.mes-hall

Ultrafast Depopulation of a Quantum Dot by LA-phonon-assisted Stimulated Emission

We demonstrate ultrafast incoherent depopulation of a quantum dot from above to below the transparency point using LA-phonon-assisted emission stimulated by a redshifted laser pulse. The QD is turned from a weakly vibronic system into a strongly vibronic one by laser driving which enables the phonon-assisted relaxation between the excitonic components of two dressed states. The depopulation is achieved within a laser pulse-width-limited time of 20 ps and exhibits a broad tuning range of a few meV. Our experimental results are well reproduced by path-integral calculations.

cond-mat.mes-hall

Phonon-assisted population inversion of a single quantum dot

We demonstrate an approach to realize the population inversion of a single InGaAs/GaAs quantum dot, which is driven by a laser pulse tuned within the neutral exciton phonon sideband. The inversion is achieved by rapid thermalization of the optically dressed states via phonon-assisted relaxation. A maximum exciton population of 0.67 $\pm$ 0.06 is measured for a laser tuned 0.83 meV to higher energy and the phonon sideband is mapped using a two-color pump-probe technique. Our experiments reveal that, in accordance with theory, the phonon-bath provides additional functionality for an optically driven quantum dot qubit.

cond-mat.mes-hall