A. Junkes | Searcharxiv

arXiv2016

Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Physics at the Terascale" during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R&D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

physics.ins-det↗

arXiv2015

Processing and characterization of epitaxial GaAs radiation detectors

GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

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