arXiv subjects

A. K. Shukla

Publications and source records attributed to A. K. Shukla.

15 recordsLinked to original sources

arXiv2026

Tunable Magnetic Frustration in the Cu-Ru-based Double Perovskite La$_{2-x}$Sm$_x$CuRuO$_6$ (x = 0, 1, 2) Oxides

In this study, we investigate structural, magnetic, and electronic properties of the copper-ruthenate based oxide double perovskite La$_{2-x}$Sm$_x$CuRuO$_6$ (x = 0, 1, 2), synthesized through the solid-state reaction method. X-ray diffraction analysis reveals that all compounds crystallize in a monoclinic symmetry, with varying degree of structural distortion that increases in moving from La$^{3+}$ to smaller size cation Sm$^{3+}$. Electrical resistivity studies indicate insulating behaviour in all compounds, with variable-range-hopping domination at low temperatures, due to presence of anti-site disorder. AC susceptibility and heat capacity measurements suggest suppression of frustration in Sm-bearing compounds, affecting the magnetic behavior. Our first-principles calculations suggest that the combined effects of lattice distortion and Sm magnetism play a crucial role in weakening magnetic frustration, thereby rationalizing the experimental observations. These findings shed light on the complex interplay of crystal structure and magnetism in Cu-Ru double perovskites, and open up an avenue for tuning of magnetic properties through rare-earth-ion substitution.

cond-mat.mtrl-sci↗

arXiv2020

Structure, magnetism and electronic properties in 3$d$-5$d$ based double perovskite (Sr$_{1-x}$Ca$_x$)$_2$FeIrO$_6$ (0 $\leq$ $x$ $\leq$ 1): A combined experimental and theoretical investigation

The 3$d$-5$d$ based double perovskites offer an ideal playground to study the interplay between electron correlation ($U$) and spin-orbit coupling (SOC) effect, showing exotic physics. The Sr$_2$FeIrO$_6$ is an interesting member in this family with ionic distribution of Fe$^{3+}$ (3$d^5$) and Ir$^{5+}$ (5$d^4$) where the later is believed to be nonmagnetic under the picture of strong SOC. Here, we report detailed investigation of structural, magnetic and electronic transport properties along with electronic structure calculations in (Sr$_{1-x}$Ca$_x$)$_2$FeIrO$_6$ series with $x$ from 0 to 1. While the basic interactions such as, $U$ and SOC are unlikely to be modified but a structural modification is expected due to ionic size difference between Sr$^{2+}$ and Ca$^{2+}$ which would influence other properties such as crystal field effect and band widths. While a nonmonotonic changes in lattice parameters are observed across the series, the spectroscopic investigations reveal that 3+/5+ charge state of Fe/Ir continue till end of the series. An analysis of magnetic data suggests similar nonmonotonic evolution of magnetic parameters with doping. Temperature dependent crystal structure as well as low temperature (5 K) magnetic structure have been determined from neutron powder diffraction measurements. The whole series shows insulating behavior. The electronic structure calculations show, SOC enhanced, a noncollinear antiferromagnetic and Mott-type insulating state is the stable ground state for present series with a substantial amount of orbital moment, but less than the spin magnetic moment, at the Ir site and the magnetocrystalline anisotropy. The obtained results imply that the Ca$^{2+}$ has large influence on the magnetic and transport properties, further showing a large agreement between experimental results as well as theoretical calculations.

cond-mat.str-el↗

arXiv2017

Unipolar resistive switching in cobalt titanate thin films

We report giant resistive switching of an order of 104, long-time charge retention characteristics up to 104 s, non-overlapping SET and RESET voltages, ohmic in low resistance state (LRS) and space charge limited current (SCLC) mechanism in high resistance state (HRS) properties in polycrystalline perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy study was carried out for both LRS and HRS states which illustrates that only bulk resistance changes after resistance switching, however, there is a small change (<10% which is in pF range) in the bulk capacitance value in both states. These results suggest that in LRS state current filaments break the capacitor in many small capacitors in a parallel configuration which in turn provides the same capacitance in both states even there was 90 degree changes in phase-angle and an order of change in the tangent loss.

cond-mat.mtrl-sci↗

arXiv2016

Griffiths phase and critical behavior in layered Sr$_2$IrO$_4$ ferromagnet

We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic critical exponents $β$ = 0.77(1), $γ$ = 1.59(2) and $δ= 3.06(4)$, in corroboration with magneto-caloric study. The abnormal exponent values have been viewed in context of ferromagnetic-Griffiths phase transition. The GP has been further analyzed using Bray model, which yields a reliable value of $β$ = 0.19(2), belonging to the two-dimensional (2D) XYh$_4$ universality class with strong anisotropy present in Sr$_2$IrO$_4$. The present study proposes Bray model as a possible tool to investigate the critical behavior for Griffiths ferromagnets in place of conventional Arrott plot analysis. The possible origins of GP and its correlation with insulating nature of Sr$_2$IrO$_4$ have been discussed.

cond-mat.str-el↗

arXiv2015

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar capping.

cond-mat.mtrl-sci↗

arXiv2014

Micro-Raman and field emission studies of silicon nanowires prepared by metal assisted chemical etching

Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned vertical SiNWs. Raman shift and size relation from bond-polarizability model has been used to calculate exact confinement sizes in SiNWs. The Si optical phonon peak for SiNWs showed a downshift and an asymmetric broadening with decreasing diameter of the SiNWs due to quantum confinement of optical phonons. The field emission characteristics of these SiNWs are studied based by carrying out current-voltage measurements followed by a theoretical analysis using Fowler-Nordheim equation. The electron field emission increased with decreasing diameter of SiNWs. Field emission from these SiNWs exhibits significant enhancement in turn-on field and total emission current with decreasing nanowire size. The reported results in the current study indicate that MACE is a simple technique to prepare well-aligned SiNWs with potentials for applications in field emission devices.

cond-mat.mes-hall↗

arXiv2014

Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)

Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.

cond-mat.mes-hall↗

arXiv2009

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at $\sim$ 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P$^+$ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ions cm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.

cond-mat.mes-hall↗

arXiv2009

Defect free visible photoluminescence from laser-generated germanium nanoparticles

Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at room temperature. Size dependent PL peak shift in Ge nanoparticles has been explained in terms of quantum confinement. Theoretical calculations of radiative lifetime using oscillator strength, which is closely related to the size of the nanostructures, suggests that the PL is originating from a radiative recombination process in quantum confined Ge nanostructures.

cond-mat.mes-hall↗

arXiv2009

Thermal effects on electron-phonon interaction in silicon nanostructures

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.

cond-mat.mes-hall↗

arXiv2009

Quasiperiodic free electron metal layers

Using electron diffraction, we show that free electron metals such as sodium and potassium form a highly regular quasiperiodic monolayer on the fivefold surface of icosahedral Al-Pd-Mn and that the quasiperiodicity propagates up to the second layer in sodium. Our photoelectron spectroscopy results show that the quasicrystalline alkali metal adlayer does not exhibit a pseudogap near the Fermi level, thought to be charactersitic for the electronic structure of quasicrystalline materials. Calculations based on density functional theory provide a model structure for the quasicrystalline alkali metal monolayer and confirm the absence of a pseudogap.

cond-mat.mtrl-sci↗

arXiv2007

Investigation of unoccupied electronic states of LaCoO$_3$ and PrCoO$_3$ using inverse photoemission spectroscopy and GGA + $U$ calculations

The unoccupied electronic states of LaCoO$_3$ and PrCoO$_3$ are studied using room temperature inverse photoemission spectroscopy and \emph{ab initio} GGA+$\emph{U}$ band structure calculations. A fairly good agreement between experiment and theory is obtained. The intensity of the peak just above the Fermi-level is found to be very much sensitive to the hybridization of Co 3$d$ and O 2$p$ orbitals. Moreover, the band just above the Fermi-level is of Co 3$d$ character with little contribution from O 2$p$ states.

cond-mat.str-el↗

arXiv2007

Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn_2NiGa

The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in good agreement with experiment. The majority-spin Fermi surface (FS) expands in the martensitic phase, while the minority-spin FS shrinks. FS nesting indicates occurrence of phonon softening and modulation in the martensitic phase.

cond-mat.other↗

arXiv2005

Optimal operating conditions and characteristics of acetone/CaF_2 detector for inverse photoemission spectroscopy

Performance and characteristics of a band-pass photon detector using acetone gas and CaF_2 window (acetone/CaF_2) have been studied and compared with an ethanol/MgF_2 detector. The optimal operating conditions are found to be 4 mbar acetone pressure and 745+/-20 V anode voltage. The count rate obtained by us is about a factor of 3 higher than what has been reported earlier for the acetone detector. Unlike other gas filled detectors, this detector works in the proportional region with very small dead time (4 micro sec). A detector band-pass of 0.48+/-0.01 eV FWHM is obtained.

cond-mat.mtrl-sci↗

arXiv2005

Influence of Ni doping on the electronic structure of Ni_2MnGa

The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni doping have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin DOS with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.

cond-mat.mtrl-sci↗