arXiv subjects

A. Kahn

Publications and source records attributed to A. Kahn.

7 recordsLinked to original sources

arXiv2024

In-Flight Performance of Spider's 280 GHz Receivers

SPIDER is a balloon-borne instrument designed to map the cosmic microwave background at degree-angular scales in the presence of Galactic foregrounds. SPIDER has mapped a large sky area in the Southern Hemisphere using more than 2000 transition-edge sensors (TESs) during two NASA Long Duration Balloon flights above the Antarctic continent. During its first flight in January 2015, SPIDER observed in the 95 GHz and 150 GHz frequency bands, setting constraints on the B-mode signature of primordial gravitational waves. Its second flight in the 2022-2023 season added new receivers at 280 GHz, each using an array of TESs coupled to the sky through feedhorns formed from stacks of silicon wafers. These receivers are optimized to produce deep maps of polarized Galactic dust emission over a large sky area, providing a unique data set with lasting value to the field. We describe the instrument's performance during SPIDER's second flight, focusing on the performance of the 280 GHz receivers. We include details on the flight, in-band optical loading at float, and an early analysis of detector noise.

astro-ph.IM↗

arXiv2020

Design and pre-flight performance of SPIDER 280 GHz receivers

In this work we describe upgrades to the Spider balloon-borne telescope in preparation for its second flight, currently planned for December 2021. The Spider instrument is optimized to search for a primordial B-mode polarization signature in the cosmic microwave background at degree angular scales. During its first flight in 2015, Spider mapped ~10% of the sky at 95 and 150 GHz. The payload for the second Antarctic flight will incorporate three new 280 GHz receivers alongside three refurbished 95- and 150 GHz receivers from Spider's first flight. In this work we discuss the design and characterization of these new receivers, which employ over 1500 feedhorn-coupled transition-edge sensors. We describe pre-flight laboratory measurements of detector properties, and the optical performance of completed receivers. These receivers will map a wide area of the sky at 280 GHz, providing new information on polarized Galactic dust emission that will help to separate it from the cosmological signal.

astro-ph.IM↗

arXiv2018

Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF$_3)_3$ doped PBDTTT-c

In this study, we aim to improve our understanding of the doping mechanism involved in the polymer PBDTTT-c doped with(Mo(tfd-COCF3)3. We follow the evolution of the hole density with dopant concentration to highlight the limits of organic semiconductor doping. To enable the use of doping to enhance the performance of organic electronic devices, doping efficiency must be understood and improved. We report here a study using complementary optical and electrical characterization techniques, which sheds some light on the origin of this limited doping efficiency at high dopant concentration. Two doping mechanisms are considered, the direct charge transfer (DCT) and the charge transfer complex (CTC). We discuss the validity of the model involved as well as its impact on the doping efficiency.

physics.app-ph↗

arXiv2017

P-doped organic semiconductor: potential replacement for PEDOT:PSS in organic photodetectors

In this work we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layer in organic photodetectors processed by solution. As PEDOT:PSS is known to be sensitive to humidity, oxygen and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of Poly((4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno(3,4-b]thiophene-)-2-6-diyl)) (PBDTTT-c) p-doped with the dopant tris-(1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3)3) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons in the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9x1E13 cm(Hz)1/2(W)-1, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

physics.app-ph↗

arXiv2004

Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

cond-mat.mtrl-sci↗

arXiv2004

Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level

The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak-chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This induced density of states is found to be large enough (even if the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital. We conclude that the metal/PTCDA interface molecular level alignment is due to the electrostatic dipole created by the charge transfer between the two solids.

cond-mat.mtrl-sci↗

arXiv2002

Electronic polarization at surfaces and thin films of organic molecular crystals: PTCDA

The electronic polarization energies, P = (P+) + (P-), of a PTCDA (perylenetetracarboxylic acid dianhydride) cation and anion in a crystalline thin film on a metallic substrate are computed and compared with measurements of the PTCDA transport gap on gold and silver. Both experiments and theory show that P is 500 meV larger in a PTCDA monolayer than in 50 A films. Electronic polarization in systems with surfaces and interfaces are obtained self-consistently in terms of charge redistribution within molecules.

cond-mat↗