arXiv subjects

A. Kogan

Publications and source records attributed to A. Kogan.

4 recordsLinked to original sources

arXiv2009

Spin polarization control by electric stirring: proposal for a spintronic device

We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in a closed geometry. Our device structure does not require the application of magnetic fields, external radiation or ferromagnetic leads, and can be implemented in standard semiconducting materials.

cond-mat.mes-hall↗

arXiv2005

Kondo-temperature dependence of the Kondo splitting in a single-electron transistor

A Kondo peak in the differential conductance of a single-electron transistor is measured as a function of both magnetic field and the Kondo temperature. We observe that the Kondo splitting decreases logarithmically with Kondo temperature and that there exists a critical magnetic field Bc below which the Kondo peak does not split, in qualitative agreement with theory. However, we find that the magnitude of the prefactor of the logarithm is larger than predicted and is independent of B, in contradiction with theory. Our measurements also suggest that the value of Bc is smaller than predicted.

cond-mat.mes-hall↗

arXiv2004

Measurements of Kondo and spin splitting in single-electron transistors

We measure the spin splitting in a magnetic field $B$ of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy $Δ= \ZeemanE$. In the same devices we also measure the splitting with $B$ of the Kondo peak in differential conductance. The Kondo splitting appears only above a threshold field as predicted by theory. However, the magnitude of the Kondo splitting at high fields exceeds $2 \ZeemanE$ in disagreement with theory.

cond-mat.mes-hall↗

arXiv2002

Singlet-triplet transition in a single-electron transistor at zero magnetic field

We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak at zero bias. For even numbers of electrons we generally observe Kondo-like features corresponding to excited states. For the latter, the excitation energy often decreases with gate voltage until a new zero-bias Kondo peak results. We ascribe this behavior to a singlet-triplet transition in zero magnetic field driven by the change of shape of the potential that confines the electrons in the SET.

cond-mat.mes-hall↗