arXiv subjects

A. Kozorezov

Publications and source records attributed to A. Kozorezov.

5 recordsLinked to original sources

arXiv2022

Voltage Fluctuations in ac Biased Superconducting Transition-Edge Sensors

We present a detailed analysis of the fundamental noise sources in superconducting transition-edge sensors (TESs), ac voltage biased at MHz frequencies and treated as superconducting weak links. We have studied the noise in the resistive transition as a function of bath temperature of several detectors with different normal resistances and geometries. We show that the excess noise, typically observed in the TES electrical bandwidth, can be explained by the equilibrium Johnson noise of the quasiparticles generated within the weak link. The fluctuations at the Josephson frequency and higher harmonics contribute significantly to the measured voltage noise at the detector bandwidth through the nonlinear response of the weak link with a sinusoidal current-phase relation.

cond-mat.supr-con↗

arXiv2018

Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film

We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau_{e-ph} = 140-190 ps at T_C = 3.4 K, supporting the results of earlier measurements by independent techniques.

physics.ins-det↗

arXiv2015

Hotspot Relaxation Dynamics in a Current Carrying Superconductor

We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation time changes with temperature and wavelength. We explained all of these effects with a model based on quasi particle recombination.

cond-mat.supr-con↗

arXiv2012

Picosecond dynamics of hot carriers and phonons and scintillator non-proportionality

We have developed a model describing the non-proportional response in scintillators based on non-thermalised carrier and phonon transport. We show that the thermalization of e-h distributions produced in scintillators immediately after photon absorption may take longer than the period over which the non-proportional signal forms. The carrier and LO-phonon distributions during this period remain non-degenerate at quasi-equilibrium temperatures far exceeding room temperature. We solve balance equations describing the energy exchange in a hot bipolar plasma of electrons/holes and phonons. Taking into account dynamic screening we calculate the ambipolar diffusion coefficient at all temperatures. The non-proportional light yields calculated for NaI are shown to be consistent with experimental data. We discuss the implications of a non-equilibrium model, comparing its predictions with a model based on the transport of thermalised carriers. Finally, evidence for non-equilibrium effects is suggested by the shape of non-proportionality curve and wide dispersion in data observed in K-dip spectroscopy near the threshold. A comparison of the predicted curves shows good agreement for deformation potential value in the range 7-8 eV.

cond-mat.mtrl-sci↗

arXiv2001

Strong Quasiparticle Trapping In A 6x6 Array Of Vanadium-Aluminum Superconducting Tunnel Junctions

A 6x6 array of symmetrical V/Al/AlOx/Al/V Superconducting Tunnel Junctions (STJs) was fabricated. The base electrode is a high quality epitaxial film with a residual resistance ratio (RRR) of ~30. The top film is polycrystalline with an RRR of ~10. The leakage currents of the 25x25 mm^2 junctions are of the order of 0.5 pA/mm^2 at a bias voltage of 100 mV, which corresponds to a dynamical resistance of ~ 3 10^5 ohms. When the array was illuminated by 6 keV X-ray photons from a 55Fe radioactive source the single photon charge output was found to be low and strongly dependent on the temperature of the devices. This temperature dependence at X-ray energies can be explained by the existence of a very large number of quasiparticle (QP) traps in the Vanadium. QPs are confined in these traps, having a lower energy gap than the surrounding material, and are therefore not available for tunneling. The number of traps can be derived from the energy dependence of the responsivity of the devices (charge output per electron volt of photon input energy).

cond-mat.supr-con↗