arXiv subjects

A. Kudriashov

Publications and source records attributed to A. Kudriashov.

6 recordsLinked to original sources

arXiv2026

Electronic bistability, discontinuous switching and stochasticity in a two-dimensional semiconductor

Bistability - two stable electronic states under the same bias - underlies switching and memory, but is usually absent in transistors and must be engineered through material means: doped tunnel junctions, filaments in memristors, or phase transitions. Here we demonstrate a transistor with intrinsic electronic bistability in a single chemically homogeneous crystal. In dual-gated black phosphorus, whose band gap narrows under a perpendicular electric field due to a giant Stark effect, the gates not only modulate carrier density but also reshape the band profile, forming interband tunnel junctions in the channel. Transport across the two-gate parameter space reveals competing conduction regimes - diffusive, two tunnelling channels and Zener breakdown - whose interplay produces negative differential conductance and transconductance, discontinuous switching, and hysteresis with the state set by gate history. Moreover, the switching remains intrinsically stochastic, yet statistically stable within a narrow range of gate voltages, providing an electrically programmable source of randomness. Devices based on this principle should be realisable in other two-dimensional semiconductors, opening a route to next-generation computing architectures in which nonlinearity, switching, memory and stochasticity are integrated within a single electrostatically programmable element.

cond-mat.mes-hall↗

arXiv2026

Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies

Graphene Josephson junctions (JJ) provide a promising platform for ultra-broadband quantum sensing of light owing to graphene's frequency-independent absorption, vanishing electronic heat capacity, and weak electron-phonon coupling, which enable rapid suppression of the critical current through radiation-induced electron heating. Existing investigations have been confined to the microwave and infrared regimes, where competing detector technologies are already established; by contrast, the terahertz (THz) band - where sensitivity is most urgently lacking and no mature quantum sensor exists - has remained largerly unexplored. Here we demonstrate a strong photoresponse of graphene JJs at THz frequencies, establishing a first experimental step towards graphene-based THz quantum sensors. Under low-intensity illumination, we observe a pronounced suppression of the critical current that generates a strong photovoltage (Vph) under current bias. By tracking this Vph and independently measuring the electron temperature as a function of absorbed power, we extract a responsivity of 88 kV W^-1 and a noise-equivalent power of 45 aW Hz^-1/2 at 1.7 K. Furthermore, gate tunability of our JJ enables access to a regime where hysteretic current-voltage characteristics persist up to 0.9 K, offering a potential route toward single-photon THz detection beyond millikelvin (mK) temperatures. These findings establish graphene JJ as a versatile platform for broadband cryogenic radiation sensing and point towards their use as quantum sensors at THz frequencies.

cond-mat.mes-hall↗

arXiv2025

Reconstructing Critical Current Density in Josephson Junctions with Phase Non-linearity

In this Letter, we show that the standard Dynes-Fulton analysis, commonly used to reconstruct the critical current density from interference patterns, breaks down in Josephson junctions with nonlinear phase distributions, leading to non-physical artifacts. To address this, we developed a simple iterative reconstruction algorithm and validated it both numerically and experimentally using a planar Josephson junction model. Unlike conventional approaches based on the logarithmic Hilbert transform, the proposed method allows for incorporating prior knowledge about the system and addresses the fundamental issue of ambiguity in reconstructing the critical current density from interference patterns.

cond-mat.supr-con↗

arXiv2025

Non-Reciprocal Current-Phase Relation and Superconducting Diode Effect in Topological-Insulator-Based Josephson Junctions

Josephson junctions (JJ) are essential for superconducting quantum technologies and searches of self-conjugate quasiparticles, pivotal for fault-tolerant quantum computing. Measuring the current-phase relation (CPR) in JJ based on topological insulators (TI) can provide critical insights into unconventional phenomena in these systems, such as the presence of Majorana bound states (MBS) and the nature of non-reciprocal transport. However, reconstructing CPR as a function of magnetic field in such JJs has remained experimentally challenging. Here, we introduce a platform for precise CPR measurements in planar JJs composed of NbSe$_2$ and few layer thick Bi$_2$Se$_3$ (TI) as a function of magnetic field. When a single flux quantum $Φ_\mathrm{0}$ threads the junction, we observe anomalous peak-dip-shaped CPR behaviour and non-reciprocal supercurrent flow. We demonstrate that these anomalies stem from the edge-amplified sloped supercurrent profile rather than MBS signatures often invoked to explain puzzles emerging near $Φ_\mathrm{0}$ in TI-based JJ. Furthermore, we show that such a supercurrent profile gives rise to a previously overlooked, robust and tunable Josephson diode effect. These findings establish field-dependent CPR measurements as a critical tool for exploring topological superconducting devices and offer new design principles for non-reciprocal superconducting electronics.

cond-mat.supr-con↗

arXiv2024

Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

cond-mat.mes-hall↗

arXiv2023

High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.

cond-mat.mes-hall↗