arXiv subjects

A. L. Graninger

Publications and source records attributed to A. L. Graninger.

4 recordsLinked to original sources

arXiv2026

Fast Microwave-free State Preparation and Measurement of Superconducting Qubits

Fast, high-fidelity, scalable state preparation and measurement is critical to the realization of a quantum computing system. The state-of-the-art methods for preparation and readout of superconducting qubits require finely tuned microwave signals and ~100 ns of measurement time, which are major obstacles to the scalability and performance of superconducting quantum computers. Here, we have demonstrated novel, microwave-free methods for both preparation and readout of superconducting qubits with >99% fidelity in only 10 ns for either operation while maintaining qubit coherence. This technology is compatible with scalable superconducting digital control systems, and using quantum flux parametrons for amplification, we demonstrated full quantum-to-digital conversion in only 15 ns, which is an order of magnitude faster than state-of-the-art microwave-based techniques.

quant-ph↗

arXiv2014

Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor ($ν$) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D systems with additional degrees of freedom it is possible to cause a crossing of the LLs at the Fermi level. At and near these crossings, the FQHE states are often weakened or destroyed. Here we report the observation of an unusual crossing of the two \emph{lowest-energy} LLs in high-mobility GaAs 2D $hole$ systems which brings to life a new \emph{even-denominator} FQHE at $ν=1/2$.

cond-mat.mes-hall↗

arXiv2014

Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ν=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Ψ_{331}$) state.

cond-mat.mes-hall↗

arXiv2011

Reentrant nu = 1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.

cond-mat.mes-hall↗