A. Lisauskas | Searcharxiv

arXiv2008

Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing

Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such structures at low, 4-80 K, temperatures exhibit well-pronounced asymmetry arising due to a presence of two different gradients of the electric field in a two dimensional electron gas. This phenomenon is caused by both, different accumulation of two-dimensional electrons due to asymmetrical shape of the structure and nonlocality in the electron drift velocity. Experiments are illustrated by a phenomenological model and Monte Carlo simulation. Possible applications of the effect to detect electromagnetic radiation of GHz and THz frequencies are discussed as well.

cond-mat.mtrl-sci↗

arXiv2006

Comment on "Dispersive Terahertz Gain of a Nonclassical Oscillator: Bloch Oscillation in Semiconductor Superlattices"

In two recent Letters [Phys. Rev. Lett. 90, 046806; Phys. Rev. Lett. 94, 057408], Hirakawa et al. investigate the emission of coherent terahertz (THz) radiation from optically excited superlattices. The authors interpret the spectra of the THz transients in terms of a semiclassical transport model and conclude that the data provide evidence for the existence of the so-called Bloch gain. We show that the interpretation of the data in terms of a conductivity is, however, not performed correctly, thus making the conclusions of cited authors void.

cond-mat.mes-hall↗