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A. M. Buryakov

Publications and source records attributed to A. M. Buryakov.

2 recordsLinked to original sources

Spintronic THz emitters based on NiCu alloys

We study THz emission from ferromagnet / nonmagnetic material (FM/NM) spintronic nanostructures in which the $Ni_xCu_{1-x}$ alloy with different $x$ is used as an FM, an NM, or both layers. The stoichiometric composition of the NiCu alloys standing at two positions (we denote it as [FM] or [PM]) is chosen so that it is ferromagnetic at room temperature in the case it is used as the FM layer, and is paramagnetic at room temperature for the NM layer. Besides, we choose the nickel ratio $x$ close to each other for both [FM] and [PM] types of the alloy (the difference is only $10\%$). We show that although NiCu[PM] does not contain heavy metal it acts as an effective converter of spin current into the electric one in our structure showing only 2.8 times smaller efficiency than Pt. Besides, the NiCu[FM] alloy, despite having quite small Curie temperature (approximately $65 ^\circ C$), acts as an effective spin source having the efficiency only 2 times smaller than Co in similar structures. This shows up the importance of boundary matching in the spintronic THz sources. Our NiCu-based THz sources reveal a possibility of effective thermally induced control of emission of THz radiation due to a unique combination of high emission rate and relatively small Curie temperature.

cond-mat.other

Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of $τ\sim$ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of $τ$: photocarriers trapping by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in the SL. The THz time-domain spectroscopic measurements reveal an increase in both emitted THz waveform and spectrum amplitudes with an increase of residual strain in SL. The results might be of considerable interest for accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology.

cond-mat.mtrl-sci