arXiv subjects

A. Manchon

Publications and source records attributed to A. Manchon.

At least 37 records · Page 2Linked to original sources

arXiv2016

Spin diffusion and torques in disordered antiferromagnets

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting in an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (ii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

cond-mat.mes-hall↗

arXiv2016

Robust spin transfer torque in antiferromagnetic tunnel junctions

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the Néel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows similar behavior as in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than in antiferromagnetic metallic spin-valves due to the tunneling nature of spin transport.

cond-mat.mes-hall↗

arXiv2015

Spin Swapping Transport and Torques in Ultrathin Magnetic Bilayers

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that treats extrinsic spin Hall effect, spin swapping and spin relaxation on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on ratio between the layers thickness $d$ and the mean free path $λ$. While spin Hall effect dominates in the diffusive limit ($d\ggλ$), spin swapping dominates in Knudsen regime ($d\lesssimλ$). A remarkable consequence is that the symmetry of the spin-orbit torque exerted on the ferromagnet is entirely different in these two regimes.

cond-mat.mes-hall↗

arXiv2015

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

cond-mat.mes-hall↗

arXiv2015

Phenomenology of chiral damping in noncentrosymmetric magnets

A phenomenology of magnetic chiral damping is proposed in the context of magnetic materials lacking inversion symmetry breaking. We show that the magnetic damping tensor adopts a general form that accounts for a component linear in magnetization gradient in the form of Lifshitz invariants. We propose different microscopic mechanisms that can produce such a damping in ferromagnetic metals, among which spin pumping in the presence of anomalous Hall effect and an effective "$s$-$d$" Dzyaloshinskii-Moriya antisymmetric exchange. The implication of this chiral damping in terms of domain wall motion is investigated in the flow and creep regimes. These predictions have major importance in the context of field- and current-driven texture motion in noncentrosymmetric (ferro-, ferri-, antiferro-)magnets, not limited to metals.

cond-mat.mes-hall↗

arXiv2015

New Perspectives for Rashba Spin-Orbit Coupling

In 1984, Bychkov and Rashba introduced a simple form of spin-orbit coupling to explain certain peculiarities in the electron spin resonance of two-dimensional semiconductors. Over the past thirty years, similar ideas have been leading to a vast number of predictions, discoveries, and innovative concepts far beyond semiconductors. The past decade has been particularly creative with the realizations of means to manipulate spin orientation by moving electrons in space, controlling electron trajectories using spin as a steering wheel, and with the discovery of new topological classes of materials. These developments reinvigorated the interest of physicists and materials scientists in the development of inversion asymmetric structures ranging from layered graphene-like materials to cold atoms. This review presents the most remarkable recent and ongoing realizations of Rashba physics in condensed matter and beyond.

cond-mat.mes-hall↗

arXiv2015

Crossover between spin swapping and Hall effect in metallic systems

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists in the interchange between the current flow and its spin polarization directions [Lifshits and Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation and spin swapping are treated on equal footing. We demonstrate that spin Hall effect and spin swapping present very different dependences as a function of the spin-orbit coupling and disorder strengths. As a consequence, we show that spin swapping may even exceed spin Hall effect. Three set-ups are proposed for the experimental observation of the spin swapping effect in metals.

cond-mat.mes-hall↗

arXiv2015

Photoinduced quantum spin and valley Hall effects and orbital magnetization in monolayer MoS2

We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin-polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.

cond-mat.mes-hall↗

arXiv2014

Relativistic Neel-order fields induced by electrical current in antiferromagnets

We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we considered bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modelled by a Rashba spin-orbit coupling. We propose an AFM memory device with electrical writing and reading.

cond-mat.mtrl-sci↗

arXiv2014

Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort, in particular discoveries that spin-orbit interactions in heavy metal/ferromagnet bilayers can yield strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. As part of the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators (TIs), which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is locked relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the TI Bi_2Se_3 at room temperature can indeed apply a strong spin-transfer torque to an adjacent ferromagnetic permalloy (Py = Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in the Bi_2Se_3 is greater than for any other spin-torque source material measured to date, even for non-ideal TI films wherein the surface states coexist with bulk conduction. Our data suggest that TIs have potential to enable very efficient electrical manipulation of magnetic materials at room temperature for memory and logic applications.

cond-mat.mes-hall↗

arXiv2012

Controlling the Spin Torque Efficiency with Ferroelectric Barriers

Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias-dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

cond-mat.mes-hall↗

arXiv2012

Manipulating the Voltage Dependence of Tunneling Spin Torques

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design efficient spin devices.

cond-mat.mes-hall↗

arXiv2012

Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

cond-mat.mes-hall↗

arXiv2011

Theory of laser-induced demagnetization at high temperatures

Laser-induced demagnetization is theoretically studied by explicitly taking into account interactions among electrons, spins and lattice. Assuming that the demagnetization processes take place during the thermalization of the sub-systems, the temperature dynamics is given by the energy transfer between the thermalized interacting baths. These energy transfers are accounted for explicitly through electron-magnons and electron-phonons interaction, which govern the demagnetization time scale. By properly treating the spin system in a self-consistent random phase approximation, we derive magnetization dynamic equations for a broad range of temperature. The dependence of demagnetization on the temperature and pumping laser intensity is calculated in detail. In particular, we show several salient features for understanding magnetization dynamics near the Curie temperature. While the critical slowdown in dynamics occurs, we find that an external magnetic field can restore the fast dynamics. We discuss the implication of the fast dynamics in the application of heat assisted magnetic recording.

cond-mat.mes-hall↗

arXiv2011

Role of Spin Diffusion in Current-Induced Domain Wall Motion

Current-induced spin torque and magnetization dynamics in the presence of spin diffusion in magnetic textures is studied theoretically. We uncover an additional torque on the form \sim{\bm\nabla}^2[{\bf M}x({\bf u}\cdot{\bm \nabla}){\bf M}], where {\bf M} is the local magnetization and {\bf u} is the direction of injected current. This torque is inversely proportional to the square of the domain wall width (\approx\frac{1}{W^2}) and strongly depends on the domain wall structure. Whereas its influence remains moderate for transverse domain walls, it can significantly increase the transverse velocity of vortex cores. Consequently, the spin diffusion can dramatically enhance the non-adiabaticity of vortex walls.

cond-mat.mes-hall↗

arXiv2011

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free electron model. We show that they modify the "conventional" bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add {\em antisymmetric} terms to the perpendicular torque ($\propto V$ and $\propto j_e|V|$), while the interfacial inelastic scattering conserves the junction symmetry and only produces {\em symmetric} terms ($\propto |V|^n$, $n\in\mathbb{N}$). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

cond-mat.mes-hall↗

arXiv2011

Spin Torque in Anisotropic Tunneling Junctions

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, in-plane and perpendicular to the plane of rotation, that can induce either current-driven {\em magnetization switching} from in-plane to out-of-plane configuration or {\em magnetization precessions}, similarly to Spin Transfer Torque in spin-valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

cond-mat.mes-hall↗

arXiv2011

Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions

Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form {\bf T}=T_{||}{\bf M}x({\bf z}x{\bf M})+T_{\bot}{\bf z}x{\bf M}, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, $T_{\bot}$, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque $T_{||}$ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.

cond-mat.mes-hall↗