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A. Mirowska

Publications and source records attributed to A. Mirowska.

2 recordsLinked to original sources

Tunable chiral anomaly in electron magnetotransport in the Weyl semimetallic Pb$_{1-x}$Sn$_x$Te:Cr alloy

We study magnetotransport properties of semiconductor substitutional alloy Pb$_{1-x}$Sn$_x$Te, known to exhibit Sn-content dependent properties of topological crystalline insulators with a semimetallic zero-gap state at a specific band inversion point. We experimentally verify the theoretically predicted role of chemical disorder in this multivalley electron system, which leads to sequential band inversions in various valleys and places the Fermi level close to the pairs of Weyl nodes, as identified in the density functional theory calculations. Doping with mixed-valence Cr resonant impurities enables exploitation of the unique properties of dopant resonant states, which provide an effective means of tuning carrier concentration. The combination of these two effects results in the pinning of the Fermi level in the vicinity of the nodal touching points across a wide range of composition. To address the above issues, we grow Bridgman bulk crystals of Pb$_{1-x}$Sn$_x$Te heavily doped with chromium and covering the full range of tin (0 $\leq x \leq$ 1), i.e. spanning both the topological crystalline insulator and trivial electronic regimes. We observe the emergence of the three dimensional (3D) Weyl semimetal phase over a range of Sn compositions, namely for $0.25 < x < 0.45$. We provide magnetotransport evidence for this and verify the relationship between the magnitude of the experimentally determined Berry curvature and the electrical properties of these materials. Quantum transport regime observed in magnetoresistance is also independently confirmed by thermal conductivity measurements.

cond-mat.mtrl-sci

Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors

Understanding the electronic structure of transition-metal dopants in IV-VI semiconductors is critical for tuning their band structure. We analyze properties of Cr dopant in $Pb_{1-x}Sn_xTe$ and PbSe by magnetic and transport measurements, which are interpreted based on density functional calculations. We demonstrate that the pinning of the Fermi energy to the chromium resonant level occurs for both n-type and p-type $Pb_{1-x}Sn_xTe$ in the whole composition range. This enables us to determine the valence band and conduction band offsets at the PbTe/SnTe/PbSe heterointerfaces, which is important for designing high-prformance 2D transistors. Furthermore, the magnetic measurements reveal the presence of Cr ions in three charge states, $Cr^{3+}$, $Cr^{2+}$, and $Cr^{1+}$. The last one corresponds to the Cr dopants incorporated at the interstitial, and not the substitutional, sites. The measured concentrations of the interstitial and substitutional Cr are comparable.

cond-mat.mtrl-sci