arXiv subjects

A. Mishchenko

Publications and source records attributed to A. Mishchenko.

At least 37 records · Page 2Linked to original sources

arXiv2019

Gyrokinetic investigation of Alfvén instabilities in the presence of turbulence

The global and electromagnetic gyrokinetic particle-in-cell code ORB5 is employed to investigate the self-consistent interactions between Alfvén modes (AM) and ion temperature gradient (ITG) turbulence in a magnetically confined plasma. Here, an axisymmetric magnetic equilibrium with reversed shear and large aspect ratio is considered. An AM with toroidal mode number n=5 is driven unstable by introducing a population of suprathermal ions. Once the AM saturates in the presence of the fully developed turbulence, the ion heat flux is dominated by the AM and its main harmonics. ITG-induced transport is found to also be enhanced in the presence of the unstable AM.

physics.plasm-ph↗

arXiv2019

Effect of the electron redistribution on the nonlinear saturation of Alfvén eigenmodes and the excitation of zonal flows

Numerical simulations of Alfvén modes (AM) driven by energetic particles are performed with the GK global PIC code ORB5. A reversed shear equilibrium magnetic field is adopted. A simplified configuration with circular flux surfaces and large aspect ratio is considered. The nonlinear saturation of beta-induced Alfvén eigenmodes (BAE) is investigated. The roles of the wave-particle nonlinearity of the different species, i.e. thermal ions, electrons, and energetic ions are described, in particular for their role in the saturation of the BAE and the generation of zonal flows. The nonlinear redistribution of the electron population is found to be important in increasing the BAE saturation level and the zonal flow amplitude.

physics.plasm-ph↗

arXiv2019

Gyrokinetic investigation of the damping channels of Alfvén modes in ASDEX Upgrade

The linear destabilization and nonlinear saturation of energetic-particle driven Alfvénic instabilities in tokamaks strongly depend on the damping channels. In this work, the collisionless damping mechanisms of Alfvénic modes are investigated within a gyrokinetic framework, by means of global simulations with the particle-in-cell code ORB5, and compared with the eigenvalue code LIGKA and reduced models. In particular, the continuum damping and the Landau damping (of ions and electrons) are considered. The electron Landau damping is found to be dominant on the ion Landau damping for experimentally relevant cases. As an application, the linear and nonlinear dynamics of toroidicity induced Alfvén eigenmodes and energetic-particle driven modes in ASDEX Upgrade is investigated theoretically and compared with experimental measurements.

physics.plasm-ph↗

arXiv2019

ORB5: a global electromagnetic gyrokinetic code using the PIC approach in toroidal geometry

This paper presents the current state of the global gyrokinetic code ORB5 as an update of the previous reference [Jolliet et al., Comp. Phys. Commun. 177 409 (2007)]. The ORB5 code solves the electromagnetic Vlasov-Maxwell system of equations using a PIC scheme and also includes collisions and strong flows. The code assumes multiple gyrokinetic ion species at all wavelengths for the polarization density and drift-kinetic electrons. Variants of the physical model can be selected for electrons such as assuming an adiabatic response or a ``hybrid'' model in which passing electrons are assumed adiabatic and trapped electrons are drift-kinetic. A Fourier filter as well as various control variates and noise reduction techniques enable simulations with good signal-to-noise ratios at a limited numerical cost. They are completed with different momentum and zonal flow-conserving heat sources allowing for temperature-gradient and flux-driven simulations. The code, which runs on both CPUs and GPUs, is well benchmarked against other similar codes and analytical predictions, and shows good scalability up to thousands of nodes.

physics.plasm-ph↗

arXiv2019

Field-induced insulating states in a graphene superlattice

We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.

cond-mat.mes-hall↗

arXiv2018

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.

cond-mat.mes-hall↗

arXiv2018

Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering

Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increases with increasing the superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron-hole asymmetry with the effect being much stronger for holes rather than electrons. Aside from fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices.

cond-mat.mes-hall↗

arXiv2018

High-order fractal states in graphene superlattices

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these conditions, semiclassical electron trajectories become straight again, similar to the case of zero magnetic field. Here we report magnetotransport measurements that reveal second, third and fourth order magnetic Bloch states at high electron densities and temperatures above 100 K. The recurrence of these states creates a fractal pattern intimately related to the origin of Hofstadter butterflies. The hierarchy of the fractal states is determined by the width of magnetic minibands, in qualitative agreement with our band structure calculations.

cond-mat.mes-hall↗

arXiv2017

Indirect excitons in van der Waals heterostructures at room temperature

Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and developing excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals TMD heterostructures based on monolayers of MoS$_2$ separated by atomically thin hexagonal boron nitride. The IXs realized in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD, and their energy is gate controlled.

cond-mat.mes-hall↗

arXiv2017

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR.

cond-mat.mes-hall↗

arXiv2017

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillations that do not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few T. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work points at unexplored physics in Hofstadter butterfly systems at high temperatures.

cond-mat.mes-hall↗

arXiv2016

Edge currents shunt the insulating bulk in gapped graphene

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of proximity-induced superconducting currents in gapped graphene and, also, compare measurements in the Hall bar and Corbino geometries in the normal state. By gradually opening the gap in bilayer graphene, we find that the supercurrent at the charge neutrality point changes from uniform to such that it propagates along narrow stripes near graphene edges. Similar stripes are found in gapped monolayers. These observations are corroborated by using the "edgeless" Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. This is in contrast to the Hall bar geometry where resistivity measured under similar conditions saturates to values of only about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.

cond-mat.mes-hall↗

arXiv2016

Nonlinear interplay of Alfven instabilities and energetic particles in tokamaks

The confinement of energetic particles (EP) is crucial for an efficient heating of tokamak plasmas. Plasma instabilities such as Alfven Eigenmodes (AE) can redistribute the EP population making the plasma heating less effective, and leading to additional loads on the walls. The nonlinear dynamics of toroidicity induced AE (TAE) is investigated by means of the global gyrokinetic particle-in-cell code ORB5, within the NEMORB project. The nonperturbative nonlinear interplay of TAEs and EP due to the wave-particle nonlinearity is studied. In particular, we focus on the nonlinear modification of the frequency, growth rate and radial structure of the TAE, depending on the evolution of the EP distribution in phase space. For the ITPA benchmark case, we find that the frequency increases when the growth rate decreases, and the mode shrinks radially. This nonlinear evolution is found to be correctly reproduced by means of a quasilinear model, namely a model where the linear effects of the nonlinearly modified EP distribution function are retained.

physics.plasm-ph↗

arXiv2016

Molecular transport through capillaries made with atomic-scale precision

Nanometre-scale pores and capillaries have long been studied because of their importance in many natural phenomena and their use in numerous applications. A more recent development is the ability to fabricate artificial capillaries with nanometre dimensions, which has enabled new research on molecular transport and led to the emergence of nanofluidics. But surface roughness in particular makes it challenging to produce capillaries with precisely controlled dimensions at this spatial scale. Here we report the fabrication of narrow and smooth capillaries through van der Waals assembly, with atomically flat sheets at the top and bottom separated by spacers made of two-dimensional crystals with a precisely controlled number of layers. We use graphene and its multilayers as archetypal two-dimensional materials to demonstrate this technology, which produces structures that can be viewed as if individual atomic planes had been removed from a bulk crystal to leave behind flat voids of a height chosen with atomic-scale precision. Water transport through the channels, ranging in height from one to several dozen atomic planes, is characterized by unexpectedly fast flow (up to 1 metre per second) that we attribute to high capillary pressures (about 1,000 bar) and large slip lengths. For channels that accommodate only a few layers of water, the flow exhibits a marked enhancement that we associate with an increased structural order in nanoconfined water. Our work opens up an avenue to making capillaries and cavities with sizes tunable to ångström precision, and with permeation properties further controlled through a wide choice of atomically flat materials available for channel walls.

cond-mat.mtrl-sci↗

arXiv2016

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus.

cond-mat.mes-hall↗

arXiv2016

2D materials and van der Waals heterostructures

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We review the properties of novel 2D crystals and how their properties are used in new heterostructure devices.

cond-mat.mtrl-sci↗

arXiv2016

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

cond-mat.mes-hall↗

arXiv2016

Magnetotransport in single layer graphene in a large parallel magnetic field

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.

cond-mat.mes-hall↗