arXiv subjects

A. N. Rudenko

Publications and source records attributed to A. N. Rudenko.

At least 37 records · Page 2Linked to original sources

arXiv2017

Exchange interactions in transition metal oxides: The role of oxygen spin polarization

Magnetism of transition metal (TM) oxides is usually described in terms of the Heisenberg model, with orientation-independent interactions between the spins. However, the applicability of such a model is not fully justified for TM oxides because spin polarization of oxygen is usually ignored. In the conventional model based on the Anderson principle, oxygen effects are considered as a property of the TM ion and only TM interactions are relevant. Here, we perform a systematic comparison between two approaches for spin polarization on oxygen in typical TM oxides. To this end, we calculate the exchange interactions in NiO, MnO, and hematite (Fe2O3) for different magnetic configurations using the magnetic force theorem. We consider the full spin Hamiltonian including oxygen sites, and also derive an effective model where the spin polarization on oxygen renormalizes the exchange interactions between TM sites. Surprisingly, the exchange interactions in NiO depend on the magnetic state if spin polarization on oxygen is neglected, resulting in non-Heisenberg behavior. In contrast, the inclusion of spin polarization in NiO makes the Heisenberg model more applicable. Just the opposite, MnO behaves as a Heisenberg magnet when oxygen spin polarization is neglected, but shows strong non-Heisenberg effects when spin polarization on oxygen is included. In hematite, both models result in non-Heisenberg behavior. General applicability of the magnetic force theorem as well as the Heisenberg model to TM oxides is discussed.

cond-mat.str-el↗

arXiv2017

Coulomb interactions and screening effects in few-layer black phosphorus: a tight-binding consideration beyond the long-wavelength limit

Coulomb interaction and its screening play an important role in many physical phenomena of materials ranging from optical properties to many-body effects including superconductivity. Here, we report on a systematic study of dielectric screening in few-layer black phosphorus (BP), a two-dimensional material with promising electronic and optical characteristics. We use a combination of a tight-binding model and rigorously determined bare Coulomb interactions, which allows us to consider relevant microscopic effects beyond the long-wavelength limit. We calculate the dielectric function of few-layer BP in the random phase approximation and show that it exhibits strongly anisotropic behavior even in the static limit. We also estimate the strength of effective local and non-local Coulomb interactions and determine their doping dependence. We find that the $p_z$ states responsible for low-energy excitations in BP provide a moderate contribution to the screening, weakening the on-site Coulomb interaction by less that a factor of two. Finally, we calculate the full plasmon spectrum of few-layer BP and discuss the effects beyond long-wavelengths.

cond-mat.mtrl-sci↗

arXiv2017

Electronic properties of single-layer antimony: Tight-binding model, spin-orbit coupling and the strength of effective Coulomb interactions

The electronic properties of single-layer antimony are studied by a combination of first-principles and tight-binding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic tight-binding model that offers an efficient and accurate description of single-particle electronic states in a wide spectral region up to the mid-UV. The strong ($λ=0.34$ eV) intra-atomic spin-orbit interaction plays a fundamental role in the band structure, leading to splitting of the valence band edge and to a significant reduction of the effective mass of the hole carriers. To obtain an effective many-body model of two-dimensional Sb we calculate the screened Coulomb interaction and provide numerical values for the on-site $\bar{V}_{00}$ (Hubbard) and intersite $\bar{V}_{ij}$ interactions. We find that the screening effects originate predominantly from the 5$p$ states, and are thus fully captured within the proposed tight-binding model. The leading kinetic and Coulomb energies are shown to be comparable in magnitude, $|t_{01}|/(\bar{V}_{00}-\bar{V}_{01}) \sim 1.6$, which suggests a strongly correlated character of 5$p$ electrons in Sb. The results presented here provide an essential step toward the understanding and rational description of a variety of electronic properties of this two-dimensional material.

cond-mat.mtrl-sci↗

arXiv2016

Effect of flexural phonons on the hole states in single-layer black phosphorus

Flexural thermal fluctuations in crystalline membranes affect the band structure of the carriers, which leads to an exponential density-of-states (DOS) tail beyond the unperturbed band edge. We present a theoretical description of this tail for a particular case of holes in single-layer black phosphorus, a material which exhibits an extremely anisotropic quasi-one-dimensional dispersion ($m_y/m_x\gg1$) and, as a result, an enhanced Van Hove singularity at the valence band top. The material parameters are determined by {\it ab initio} calculations and then are used for quantitative estimation of the effect of two-phonon (flexural) processes have on the charge carrier DOS. It is shown that unlike the isotropic case, the physics is determined by the phonons with wavevectors of the order of $q^*$, where $q^*$ determines the crossover between harmonic and anharmonic behavior of the flexural phonons. The spectral density of the holes in single-layer black phosphorus at finite temperatures is calculated.

cond-mat.mes-hall↗

arXiv2016

Role of direct exchange and Dzyaloshinskii-Moriya interactions in magnetic properties of graphene derivatives: C$_2$F and C$_2$H

According to the Lieb's theorem the ferromagnetic interaction in graphene-based materials with bipartite lattice is a result of disbalance between the number of sites available for $p_z$ electrons in different sublattices. Here, we report on another mechanism of the ferromagnetism in functionalized graphene that is the direct exchange interaction between spin orbitals. By the example of the single-side semihydrogenated (C$_2$H) and semifluorinated (C$_2$F) graphene we show that such a coupling can partially or even fully compensate antiferromagnetic character of indirect exchange interactions reported earlier [Phys. Rev. B {\bf 88}, 081405(R) (2013)]. As a result, C$_2$H is found to be a two-dimensional material with the isotropic ferromagnetic interaction and negligibly small magnetic anisotropy, which prevents the formation of the long-range magnetic order at finite temperature in accordance with the Mermin-Wagner theorem. This gives a rare example of a system where direct exchange interactions play a crucial role in determining a magnetic structure. In turn, C$_2$F is found to be at the threshold of the antiferromagnetic-ferromagnetic instability, which in combination with the Dzyaloshinskii-Moriya interaction can lead to a skyrmion state.

cond-mat.str-el↗

arXiv2016

Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration $n$, two-phonon scattering in BP is less important and can be considered negligible at $n\gtrsim10^{13}$ cm$^{-2}$. At smaller $n$, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP ($μ_{xx}/μ_{yy}\sim1.4$ at $n=10^{13}$ cm$^{-2}$ and $T=300$ K), the electron mobility is found to be significantly more anisotropic ($μ_{xx}/μ_{yy}\sim6.2$). Absolute values of $μ_{xx}$ do not exceed 250 (700) cm$^2$V$^{-1}$s$^{-1}$ for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

cond-mat.mtrl-sci↗

arXiv2016

Polaronic effects in monolayer black phosphorus on polar substrates

We investigate the effect of charge carrier interaction with surface optical phonons on the band properties of monolayer black phosphorus induced by polar substrates. We develop an analytical method based on the Lee-Low-Pines theory to calculate the spectrum of Fröhlich type continuum Hamiltonian in the long-wavelength limit. We examine the modification of a band gap and renormalization of effective masses due to the substrate-related polaronic effect. Our results show that an energy gap in supported monolayer black phosphorus is enlarged depending on a particular substrate and the interlayer distance, $z$. Among the substrate considered, the largest gap broadening at $ z=2.5$ Å is observed for the Al$_{2} $O$_{3} $ substrate, which is found to be $ \sim 50$ meV. Carrier-phonon coupling also renormalizes the effective masses which is more pronounced along the zigzag direction. Anisotropy of the effective masses becomes stronger by the influence of the polaronic effect corresponding to direction-dependent carrier-phonon coupling. We conclude that substrate phonons have a non-negligible effect on the static band properties of monolayer black phosphorus, which may be further exploited in its experimental and theoretical studies.

cond-mat.mes-hall↗

arXiv2015

Toward a realistic description of multilayer black phosphorus: from $GW$ approximation to large-scale tight-binding simulations

We provide a tight-binding model parametrization for black phosphorus (BP) with an arbitrary number of layers. The model is derived from partially self-consistent $GW_0$ approach, where the screened Coulomb interaction $W_0$ is calculated within the random phase approximation on the basis of density functional theory. We thoroughly validate the model by performing a series of benchmark calculations, and determine the limits of its applicability. The application of the model to the calculations of electronic and optical properties of multilayer BP demonstrates good quantitative agreement with \emph{ab initio} results in a wide energy range. We also show that the proposed model can be easily extended for the case of external fields, yielding the results consistent with those obtained from first principles. The model is expected to be suitable for a variety of realistic problems related to the electronic properties of multilayer BP including different kinds of disorder, external fields, and many-body effects.

cond-mat.mtrl-sci↗

arXiv2015

Chemical modifications and stability of phosphorene with impurities: A first principles study

We perform a systematic first-principles study of phosphorene in the presence of typical monovalent (hydrogen, fluorine) and divalent (oxygen) impurities. The results of our modeling suggest a decomposition of phosphorene into weakly bonded one-dimensional (1D) chains upon single- and double-side hydrogenation and fluorination. In spite of a sizable quasiparticle band gap (2.29 eV), fully hydrogenated phosphorene found to be dynamically unstable. In contrast, full fluorination of phosphorene gives rise to a stable structure, being an indirect gap semiconductor with the band gap of 2.27 eV. We also show that fluorination of phosphorene from the gas phase is significantly more likely than hydrogenation due to the relatively low energy barrier for the dissociative adsorption of F2 (0.19 eV) compared to H2 (2.54 eV). At low concentrations, monovalent impurities tend to form regular atomic rows phosphorene, though such patterns do not seem to be easily achievable due to high migration barriers (1.09 and 2.81 eV for H2 and F2, respectively). Oxidation of phosphorene is shown to be a qualitatively different process. Particularly, we observe instability of phosphorene upon oxidation, leading to the formation of disordered amorphous-like structures at high concentrations of impurities.

cond-mat.mtrl-sci↗

arXiv2015

Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects

We study the electronic and optical properties of single- and bilayer black phosphorus with shortand long-range defects by using the tight-binding propagation method. Both types of defect states are localized and induce a strong scattering of conduction states reducing significantly the charge carrier mobility. In contrast to properties of pristine samples, the anisotropy of defect-induced optical excitations is suppressed due to the isotropic nature of the defects. We also investigate the Landau level spectrum and magneto-optical conductivity, and find that the discrete Landau levels are sublinearly dependent on the magnetic field and energy level index, even at low defect concentrations.

cond-mat.mes-hall↗

arXiv2014

Single 3$d$ transition metal atoms on multi-layer graphene systems: electronic configurations, bonding mechanisms and role of the substrate

The electronic configurations of Fe, Co, Ni, and Cu adatoms on graphene and graphite have been studied by x-ray magnetic circular dichroism and charge transfer multiplet theory. A delicate interplay between long-range interactions and local chemical bonding is found to influence the adatom equilibrium distance and magnetic moment. The results for Fe and Co are consistent with purely physisorbed species having, however, different 3$d$-shell occupancies on graphene and graphite ($d^{n+1}$ and $d^n$, respectively). On the other hand, for the late 3$d$ metals Ni and Cu a trend towards chemisorption is found, which strongly quenches the magnetic moment on both substrates.

cond-mat.mtrl-sci↗

arXiv2013

Exchange interactions and frustrated magnetism in single-side hydrogenated and fluorinated graphene

Magnetism in single-side hydrogenated (C$_2$H) and fluorinated (C$_2$F) graphene is analyzed in terms of the Heisenberg model with parameters determined from first principles. We predict a frustrated ground state for both systems, which means the instability of collinear spin structures and sheds light on the absence of a conventional magnetic ordering in defective graphene demonstrated in recent experiments. Moreover, our findings suggest a highly correlated magnetic behavior at low temperatures offering the possibility of a spin-liquid state.

cond-mat.mes-hall↗

arXiv2013

Correlation effects in insulating surface nanostructures

We study the role of static and dynamical Coulomb correlation effects on the electronic and magnetic properties of individual Mn, Fe and Co adatoms deposited on the CuN surface. For these purposes, we construct a realistic Anderson model, solve it by using finite-temperature exact diagonalization method and compare the calculated one-particle spectral functions with the LDA+$U$ densities of states. In contrast to Mn/CuN and Fe/CuN, the cobalt system tends to form the electronic excitations at the Fermi level. Based on the calculated magnetic response functions, the relative relaxation times for the magnetic moments of impurity orbitals are estimated. To study the effect of the dynamical correlations on the exchange interaction in nanoclusters, we solve the two-impurity Anderson model for the Mn dimer on the CuN surface. It is found that the experimental exchange interaction can be well reproduced by employing $U$=3 eV, which is two times smaller than the value used in static mean-field LDA+$U$ calculations. This suggests on important role of dynamical correlations in the interaction between adatoms on a surface.

cond-mat.str-el↗

arXiv2012

Adsorption of cobalt on graphene: Electron correlation effects from a quantum chemical perspective

In this work, we investigate the adsorption of a single cobalt atom (Co) on graphene by means of the complete active space self-consistent field approach, additionally corrected by the second-order perturbation theory. The local structure of graphene is modeled by a planar hydrocarbon cluster (C$_{24}$H$_{12}$). Systematic treatment of the electron correlations and the possibility to study excited states allow us to reproduce the potential energy curves for different electronic configurations of Co. We find that upon approaching the surface, the ground-state configuration of Co undergoes several transitions, giving rise to two stable states. The first corresponds to the physisorption of the adatom in the high-spin $3d^74s^2$ ($S=3/2$) configuration, while the second results from the chemical bonding formed by strong orbital hybridization, leading to the low-spin $3d^9$ ($S=1/2$) state. Due to the instability of the $3d^9$ configuration, the adsorption energy of Co is small in both cases and does not exceed 0.35 eV. We analyze the obtained results in terms of a simple model Hamiltonian that involves Coulomb repulsion ($U$) and exchange coupling ($J$) parameters for the 3$d$ shell of Co, which we estimate from first-principles calculations. We show that while the exchange interaction remains constant upon adsorption ($\simeq1.1$ eV), the Coulomb repulsion significantly reduces for decreasing distances (from 5.3 to 2.6$\pm$0.2 eV). The screening of $U$ favors higher occupations of the 3$d$ shell and thus is largely responsible for the interconfigurational transitions of Co. Finally, we discuss the limitations of the approaches that are based on density functional theory with respect to transition metal atoms on graphene, and we conclude that a proper account of the electron correlations is crucial for the description of adsorption in such systems.

cond-mat.mtrl-sci↗

arXiv2012

Orbital-selective conductance of Co adatom on the Pt(111) surface

We propose an orbital-selective model for the transport and magnetic properties of the individual Co impurity deposited on the Pt(111). Using the combination of the Anderson-type Hamiltonian and the Kubo's linear response theory we show that the magnetization and dI/dV spectrum of Co adatom are originated from the 3d states of the different symmetry. A textbook expression for the spin-dependent differential conductance provides a natural connection between magnetic and transport properties of Co/Pt(111). We found that it is possible to detect and to manipulate the different 3d states of the Co adatom by tuning the spin polarization of the tip and tip-impurity distance in STM experiments.

cond-mat.str-el↗

arXiv2011

Interfacial interactions between local defects in amorphous SiO$_2$ and supported graphene

We present a density functional study of graphene adhesion on a realistic SiO$_2$ surface taking into account van der Waals (vdW) interactions. The SiO$_2$ substrate is modeled at the local scale by using two main types of surface defects, typical for amorphous silica: the oxygen dangling bond and three-coordinated silicon. The results show that the nature of adhesion between graphene and its substrate is qualitatively dependent on the surface defect type. In particular, the interaction between graphene and silicon-terminated SiO$_2$ originates exclusively from the vdW interaction, whereas the oxygen-terminated surface provides additional ionic contribution to the binding arising from interfacial charge transfer ($p$-type doping of graphene). Strong doping contrast for the different surface terminations provides a mechanism for the charge inhomogeneity of graphene on amorphous SiO$_2$ observed in experiments. We found that independent of the considered surface morphologies, the typical electronic structure of graphene in the vicinity of the Dirac point remains unaltered in contact with the SiO$_2$ substrate, which points to the absence of the covalent interactions between graphene and amorphous silica. The case of hydrogen-passivated SiO$_2$ surfaces is also examined. In this situation, the binding with graphene is practically independent of the type of surface defects and arises, as expected, from the vdW interactions. Finally, the interface distances obtained are shown to be in good agreement with recent experimental studies.

cond-mat.mes-hall↗

arXiv2011

Graphene adhesion on mica: Role of surface morphology

We investigate theoretically the adhesion and electronic properties of graphene on a muscovite mica surface using the density functional theory (DFT) with van der Waals (vdW) interactions taken into account (the vdW-DF approach). We found that irregularities in the local structure of cleaved mica surface provide different mechanisms for the mica-graphene binding. By assuming electroneutrality for both surfaces, the binding is mainly of vdW nature, barely exceeding thermal energy per carbon atom at room temperature. In contrast, if potassium atoms are non uniformly distributed on mica, the different regions of the surface give rise to $n$- or $p$-type doping of graphene. In turn, an additional interaction arises between the surfaces, significantly increasing the adhesion. For each case the electronic states of graphene remain unaltered by the adhesion. It is expected, however, that the Fermi level of graphene supported on realistic mica could be shifted relative to the Dirac point due to asymmetry in the charge doping. Obtained variations of the distance between graphene and mica for different regions of the surface are found to be consistent with recent atomic force microscopy experiments. A relative flatness of mica and the absence of interlayer covalent bonding in the mica-graphene system make this pair a promising candidate for practical use.

cond-mat.mes-hall↗

arXiv2010

Renormalized spectral function for Co adatom on the Pt(111) surface

The strong Coulomb correlations effects in the electronic structure of magnetic Co adatom on the Pt(111) surface have been investigated. Using a realistic five d-orbital impurity Anderson model at low temperatures with parameters determined from first-principles calculations we found a striking change of the electronic structure in comparison with the LDA results. The spectral function calculated with full rotationally invariant Coulomb interaction is in good agreement with the quasiparticle region of the STM conductance spectrum. Using the calculated spin-spin correlation functions we have analyzed the formation of the magnetic moments of the Co impurity orbitals.

cond-mat.str-el↗