A. N. Voronovsky | Searcharxiv

arXiv2005

Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions

The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-barrier height and the charged impurity concentration directly from the tunneling data. This approach was applied to the analysis of the low temperature experiments on tunneling under pressure up to 3 GPa in a piston-cylinder gauge. Here we present the barrier height versus pressure for heavily doped tunnel junctions and compare the obtained pressure dependence of the Schottky barrier with known behavior of the band gap under pressure taking into account the influence of the L- and X-valleys and DX centers.

cond-mat.mtrl-sci↗

arXiv2002

Experimental Study of Pressure Influence on Tunnel Transport into 2DEG

We present the concept and the results of pilot measurements of tunneling in a system {Al/$δ_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$δ$-GaAs} equals to 0.86 eV at P=0 and its pressure coefficient is $3 meV/kbar$; charged impurity density in the delta-layer starts to drop from $4.5\times 10^{12} cm^{-2}$ down to $3.8\times 10^{12} cm^{-2}$ at about 1.5 GPa; metal-insulator transition may occur in 2DEG at about 2 GPa.

cond-mat↗