arXiv subjects

A. Persaud

Publications and source records attributed to A. Persaud.

At least 19 recordsLinked to original sources

arXiv2023

Programmable quantum emitter formation in silicon

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.

quant-ph↗

arXiv2022

Carbon nanotube substrates enhance SARS-CoV-2 spike protein ion yields in matrix assisted laser desorption-ionization mass spectrometry

Nanostructured surfaces enhance ion yields in matrix assisted laser desorption-ionization mass spectrometry (MALDI-MS). The spike protein complex, S1, is one fingerprint signature of Sars-CoV-2 with a mass of 75 kDa. Here, we show that MALDI-MS yields of Sars-CoV-2 spike protein ions in the 100 kDa range are enhanced 50-fold when the matrix-analyte solution is placed on substrates that are coated with a dense forest of multi-walled carbon nanotubes, compared to yields from uncoated substrates. Nanostructured substrates can support the development of mass spectrometry techniques for sensitive pathogen detection and environmental monitoring.

physics.bio-ph↗

arXiv2021

Beam power scale-up in MEMS based multi-beam ion accelerators

We report on the development of multi-beam RF linear ion accelerators that are formed from stacks of low cost wafers and describe the status of beam power scale-up using an array of 120 beams. The total argon ion current extracted from the 120-beamlet extraction column was 0.5 mA. The measured energy gain in each RF gap reached as high as 7.25 keV. We present a path of using this technology to achieve ion currents >1 mA and ion energies >100 keV for applications in materials processing.

physics.acc-ph↗

arXiv2019

Investigation of light ion fusion reactions with plasma discharges

The scaling of reaction yields in light ion fusion to low reaction energies is important for our understanding of stellar fuel chains and the development of future energy technologies. Experiments become progressively more challenging at lower reaction energies due to the exponential drop of fusion cross sections below the Coulomb barrier. We report on experiments where deuterium-deuterium (D-D) fusion reactions are studied in a pulsed plasma in the glow discharge regime using a benchtop apparatus. We model plasma conditions using particle-in-cell codes. Advantages of this approach are relatively high peak ion currents and current densities (0.1 to several A/cm^2) that can be applied to metal wire cathodes for several days. We detect neutrons from D-D reactions with scintillator-based detectors. For palladium targets, we find neutron yields as a function of cathode voltage that are over 100 times higher than yields expected for bare nuclei fusion at ion energies below 2 keV (center of mass frame). A possible explanation is a correction to the ion energy due to an electron screening potential of 1000+/-250 eV, which increases the probability for tunneling through the repulsive Coulomb barrier. Our compact, robust setup enables parametric studies of this effect at relatively low reaction energies.

physics.plasm-ph↗

arXiv2018

Design and Implementation of a Thomson Parabola for Fluence Dependent Energy-Loss Measurements at the Neutralized Drift Compression eXperiment

The interaction of ion beams with matter includes the investigation of the basic principles of ion stopping in heated materials. An unsolved question is the effect of different, especially higher, ion beam fluences on ion stopping in solid targets. This is relevant in applications such as in fusion sciences. To address this question, a Thomson parabola was built for the Neutralized Drift Compression eXperiment (NDCX-II) for ion energy-loss measurements at different ion beam fluences. The linear induction accelerator NDCX-II delivers 2 ns short, intense ion pulses, up to several tens of nC/pulse, or 10$^{10}$-10$^{11}$ ions, with a peak kinetic energy of ~1.1 MeV and a minimal spot size of 2 mm FWHM. For this particular accelerator the energy determination with conventional beam diagnostics, for example, time of flight measurements, is imprecise due to the non-trivial longitudinal phase space of the beam. In contrast, a Thomson parabola is well suited to reliably determine the beam energy distribution. The Thomson parabola differentiates charged particles by energy and charge-to-mass ratio, through deflection of charged particles by electric and magnetic fields. During first proof-of-principle experiments, we achieved to reproduce the average initial helium beam energy as predicted by computer simulations with a deviation of only 1.4 %. Successful energy-loss measurements with 1 μm thick Silicon Nitride foils show the suitability of the accelerator for such experiments. The initial ion energy was determined during a primary measurement without a target, while a second measurement, incorporating the target, was used to determine the transmitted energy. The energy-loss was then determined as the difference between the two energies.

physics.ins-det↗

arXiv2018

Waferscale Electrostatic Quadrupole Array for Multiple Ion Beam Manipulation

We report on the first through-wafer silicon-based Electrostatic Quadrupole Array (ESQA) to focus high energy ion beams. This device is a key enabler for a wafer based accelerator architecture that lends itself to orders-of-magnitude reduction in cost, volume and weight of charged particle accelerators. ESQs are a key building block in developing compact Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) [1]. In a MEQALAC electrostatic forces are used to focus ions, and electrostatic field scaling permits high beam current densities by decreasing the beam aperture size for a given peak electric field set by breakdown limitations. Using multiple parallel beams, each totaling to an area A, can result in higher total beam current compared to a single aperture beam of the same area. Smaller dimensions also allow for higher focusing electric field gradients and therefore higher average beam current density. Here we demonstrate that Deep Reactive Ion Etching (DRIE) micromachined pillar electrodes, electrically isolated by silicon-nitride thin films enable higher performance ESQA with waferscale scalability. The fabricated ESQA are able to hold up to1 kV in air. A 3*3 array of 12 keV argon ion beams are focused in a wafer accelerator unit cell to pave the way for multiple wafer accelerator.

physics.acc-ph↗

arXiv2018

Demonstration of a compact linear accelerator

Recently, we presented a new approach for a compact radio-frequency (RF) accelerator structure and demonstrated the functionality of the individual components: acceleration units and focusing elements. In this paper, we combine these units to form a working accelerator structure including a matching section between the ion source extraction grids and the RF-acceleration unit. The matching section consist of six electrostatic quadrupoles (ESQs) fabricated using 3D-printing techniques. The matching section enables us to capture twice the amount of beam and match the beam envelope to conditions for an acceleration lattice. We present data from an integrated accelerator consisting of the source, matching section, and an ESQ doublet sandwiched between two RF-acceleration units.

physics.acc-ph↗

arXiv2017

Staging of RF-accelerating units in a MEMS-based ion accelerator

Multiple Electrostatic Quadrupole Array Linear Accelerators (MEQALACs) provide an opportunity to realize compact radio-frequency (RF) accelerator structures that can deliver very high beam currents. MEQALACs have been previously realized with acceleration gap distances and beam aperture sizes of the order of centimeters. Through advances in Micro-Electro-Mechanical Systems (MEMS) fabrication, MEQALACs can now be scaled down to the sub-millimeter regime and batch processed on wafer substrates. In this paper, we show first results from using three RF stages in a compact MEMS-based ion accelerator. The results presented show proof-of-concept with accelerator structures formed from printed circuit boards using a 3x3 beamlet arrangement and noble gas ions at 10 keV. We present a simple model to describe the measured results. The model is then used to examine some of the aspects of this approach, such as possible effects of alignment errors. We also discuss some of the scaling behaviour of a compact MEQALAC. The MEMS-based approach enables a low-cost, highly versatile accelerator covering a wide range of beam energies and currents. Applications include ion-beam analysis, mass spectrometry, materials processing, and at very high beam powers, plasma heating.

physics.acc-ph↗

arXiv2017

A compact linear accelerator based on a scalable microelectromechanical-system RF-structure

A new approach for a compact radio-frequency (RF) accelerator structure is presented. The new accelerator architecture is based on the Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) structure that was first developed in the 1980s. The MEQALAC utilized RF resonators producing the accelerating fields and providing for higher beam currents through parallel beamlets focused using arrays of electrostatic quadrupoles (ESQs). While the early work obtained ESQs with lateral dimensions on the order of a few centimeters, using printed circuits board (PCB), we reduce the characteristic dimension to the millimeter regime, while massively scaling up the potential number of parallel beamlets. Using Microelectromechanical systems scalable fabrication approaches, we are working on further reducing the characteristic dimension to the sub-millimeter regime. The technology is based on RF-acceleration components and ESQs implemented in PCB or silicon wafers where each beamlet passes through beam apertures in the wafer. The complete accelerator is then assembled by stacking these wafers. This approach has the potential for fast and inexpensive batch fabrication of the components and flexibility in system design for application specific beam energies and currents. For prototyping the accelerator architecture, the components have been fabricated using PCB. In this paper, we present proof of concept results of the principal components using PCB: RF acceleration and ESQ focusing. Ongoing developments on implementing components in silicon and scaling of the accelerator technology to high currents and beam energies are discussed.

physics.acc-ph↗

arXiv2017

Irradiation of Materials with Short, Intense Ion pulses at NDCX-II

We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on recent target experiments on beam driven melting and transmission ion energy loss measurements with nanosecond and millimeter-scale ion beam pulses and thin tin foils. Bunches with around 10^11 ions, 1-mm radius, and 2-30 ns FWHM duration have been created with corresponding fluences in the range of 0.1 to 0.7 J/cm^2. To achieve these short pulse durations and mm-scale focal spot radii, the 1.1 MeV He+ ion beam is neutralized in a drift compression section, which removes the space charge defocusing effect during final compression and focusing. The beam space charge and drift compression techniques resemble necessary beam conditions and manipulations in heavy ion inertial fusion accelerators. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing accelerator performance.

physics.acc-ph↗

arXiv2016

Recent Experiments At Ndcx-II: Irradiation Of Materials Using Short, Intense Ion Beams

We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and summarize recent studies of material properties created with nanosecond and millimeter-scale ion beam pulses. The scientific topics being explored include the dynamics of ion induced damage in materials, materials synthesis far from equilibrium, warm dense matter and intense beam-plasma physics. We summarize the improved accelerator performance, diagnostics and results of beam-induced irradiation of thin samples of, e.g., tin and silicon. Bunches with over 3x10^10 ions, 1- mm radius, and 2-30 ns FWHM duration have been created. To achieve these short pulse durations and mm-scale focal spot radii, the 1.2 MeV He+ ion beam is neutralized in a drift compression section which removes the space charge defocusing effect during final compression and focusing. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing accelerator performance; these keep pace with the accelerator repetition rate of ~1/minute.

physics.acc-ph↗

arXiv2016

Control Infrastructure for a Pulsed Ion Accelerator

We report on updates to the accelerator controls for the Neutralized Drift Compression Experiment II, a pulsed induction-type accelerator for heavy ions. The control infrastructure is built around a LabVIEW interface combined with an Apache Cassandra backend for data archiving. Recent upgrades added the storing and retrieving of device settings into the database, as well as ZeroMQ as a message broker that replaces LabVIEW's shared variables. Converting to ZeroMQ also allows easy access via other programming languages, such as Python.

physics.acc-ph↗

arXiv2014

Accessing defect dynamics using intense, nanosecond pulsed ion beams

Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

cond-mat.mtrl-sci↗

arXiv2009

Critical issues in the formation of quantum computer test structures by ion implantation

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

cond-mat.mes-hall↗

arXiv2008

Mapping of ion beam induced current changes in FinFETs

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

cond-mat.other↗

arXiv2008

Single-atom doping for quantum device development in diamond and silicon

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. We discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond.

cond-mat.other↗

arXiv2007

Detection of low energy single ion impacts in micron scale transistors at room temperature

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.

cond-mat.other↗

arXiv2005

Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

cond-mat.mtrl-sci↗