arXiv subjects

A. Quinn

Publications and source records attributed to A. Quinn.

4 recordsLinked to original sources

arXiv2025

Spontaneous Raman scattering out of a metastable atomic qubit

Metastable qubits in atomic systems can enable large-scale quantum computing by simplifying hardware requirements and adding efficient erasure conversion to the pre-existing toolbox of high-fidelity laser-based control. For trapped atomic ions, the fundamental error floor of this control is given by spontaneous Raman and Rayleigh scattering from short-lived excited states. We measure spontaneous Raman scattering rates out of a metastable $D_{5/2}$ qubit manifold of a single trapped $^{40}$Ca$^+$ ion illuminated by 976 nm light that is -44 THz detuned from the dipole-allowed transition to the $P_{3/2}$ manifold. This supports the calculation of error rates from both types of scattering during one- and two-qubit gates on this platform, thus demonstrating that infidelities $<10^{-4}$ are possible.

quant-ph↗

arXiv2024

High-fidelity entanglement of metastable trapped-ion qubits with integrated erasure conversion

Today's most advanced ion trap quantum computers have significant overhead due to the need for dual-species operation. Looking ahead, logical qubit register sizes will be limited by the encoding rate needed to correct generic Pauli errors. We address both of these issues by establishing high-fidelity control of metastable qubits, a key component of \textit{omg} or dual-type architectures, which enables converting a significant fraction of gate errors to erasures. We first implement an erasure conversion scheme which enables detection of $\sim 94\%$ of spontaneous Raman scattering errors during logic gates and nearly all errors from qubit decay. Second, we perform a two-ion geometric phase gate using far-detuned (-44\,THz) stimulated Raman transitions to produce an entangled state with a raw Bell state fidelity of 97.73\% and a SPAM-corrected Bell state fidelity of 98.61\%. When subtracting erasure errors, this fidelity becomes 99.16\%. These results, along with projections based on our detailed error budget, demonstrate metastable trapped-ion qubits as a platform for low-overhead, fault-tolerant quantum computing.

physics.atom-ph↗

arXiv2023

Two-mode squeezing and SU(1,1) interferometry with trapped ions

We experimentally implement circuits of one and two mode operations on two motional modes of a single trapped ion. This is achieved by implementing the required displacement, squeezing, two-mode squeezing, and beamsplitter operations using oscillating electric potentials applied to the trap electrodes. The resulting electric fields drive the modes resonantly or parametrically without the need for optical forces. As a demonstration, we implement SU(2) and SU(1,1) interferometers with phase sensitivities near the Cram\'er-Rao bound. We report a maximum sensitivity of a SU(2) interferometer within $0.67(5)\,$dB of the standard quantum limit (SQL) as well as a single and two-mode SU(1,1) sensitivity of $5.9(2)\,$dB and $4.5(2)\,$dB below the SQL respectively.

quant-ph↗

arXiv2022

Geometries and fabrication methods for 3D printing ion traps

The majority of microfabricated ion traps in use for quantum information processing are of the 2D 'surface-electrode' type or of the 3D 'wafer' type. Surface-electrode traps greatly simplify fabrication and hold the promise of allowing trapped-ion quantum computers to scale via standard semiconductor industry fabrication techniques. However, their geometry constrains them to having much lower trapping efficiency, depth, and harmonicity compared to 3D geometries. Conversely 3D geometries offer superior trap performance but fabrication is more complex, limiting potential to scale. We describe new 'trench' geometries that exist in the design space between these two paradigms. They still allow for a simple, planar electrode layer but with much more favourable trapping properties. We propose such traps could be 3D-printed over a 2D wafer with microfabricated components already integrated into it, thus retaining all the integration techniques and scaling advantages of surface-electrode traps. As a proof of principle we use 2-photon direct laser writing lithography to print the required electrode structures with the proposed geometry.

quant-ph↗