arXiv subjects

A. Razumnaya

Publications and source records attributed to A. Razumnaya.

6 recordsLinked to original sources

arXiv2022

Topological polarization networking in uniaxial ferroelectrics

Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric.

cond-mat.mtrl-sci↗

arXiv2022

The ferroelectric field-effect transistor with negative capacitance

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.

cond-mat.mes-hall↗

arXiv2020

Controllable skyrmion chirality in ferroelectrics

Chirality, an intrinsic handedness, is one of the most intriguing fundamental phenomena in nature. Materials composed of chiral molecules find broad applications in areas ranging from nonlinear optics and spintronics to biology and pharmaceuticals. However, chirality is usually an invariable inherent property of a given material that cannot be easily changed at will. Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality of which can be controlled and switched. We devise protocols for realizing control and efficient manipulations of the different types of skyrmions. Our findings open the route for controlled chirality with potential applications in ferroelectric-based information technologies.

cond-mat.mes-hall↗

arXiv2019

Hopfions emerge in ferroelectrics

Paradigmatic knotted solitons, Hopfions, that are characterized by topological Hopf invariant, are widely investigated in the diverse areas ranging from high energy physics, cosmology and astrophysics to biology, magneto- and hydrodynamics and condensed matter physics. Yet, while holding high promise for applications, they remain elusive and under-explored. Here we demonstrate that Hopfions emerge as a basic configuration of polarization field in confined ferroelectric nanoparticles. Our findings establish that Hopfions govern a wealth of novel functionalities in the electromagnetic response of composite nanomaterials opening route to unprecedented technological applications.

cond-mat.mes-hall↗

arXiv2019

Ferroelectric multiple-valued logic units

Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin the polarization as a sequence of multi-stable states. Two conceptual ideas are considered. As the first system, we suggest using the strained ferroelectric films that can host the polarization states, allowing the effective field-induced multilevel switching between them. As the second one, we propose to employ the ferroelectric nano-samples that confine the topologically protected polarization textures, which may be used as MVL structural elements. We demonstrate that these systems are suitable for engineering of the 3-, 4- and even 5-level logic units and consider the circuit design for such elements.

physics.app-ph↗

arXiv2018

Harnessing ferroelectric domains for negative capacitance

The pressing quest for overcoming Boltzmann tyranny in low-power nanoscale electronics revived the thoughts of engineers of early 1930-s on the possibility of negative circuit constants. The concept of the ferroelectric-based negative capacitance (NC) devices triggered explosive activity in the field. However, most of the research addressed transient NC, leaving the basic question of the existence of the steady-state NC unresolved. Here we demonstrate that the ferroelectric nanodot capacitor hosts a stable two-domain state realizing the static reversible NC device thus opening routes for the extensive use of the NC in domain wall-based nanoelectronics.

cond-mat.mes-hall↗