arXiv subjects

A. S. Rodin

Publications and source records attributed to A. S. Rodin.

At least 19 recordsLinked to original sources

arXiv2025

Soft Error Rate in Space: A Unified Analytical Approach

A new physics-based model for analytical calculation of Soft Error Rate (SER) in digital memory circuits under the influence of heavy ions in space orbits is proposed. This method is based on parameters that are uniquely determined from the results of ground tests under nor-mal ion incidence. It is shown that preliminary averaging over the total solid angle within the standard inverse cosine model allows one to take into account the effect of isotropic flow, which increases the effective SER. The model includes the ability to estimate the contribution to SER of the low LET spectrum region, which is very important for modern ICs with low Single Event Upset tolerance.

physics.app-ph↗

arXiv2018

Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide PbX monolayers (X = S, Se, Te)

One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable spin-orbital properties. In this work, based on our previous tight-binding (TB) results, we derive an effective low-energy Hamiltonian around the symmetry points that captures the effects of strain on the electronic properties of PbX. We find that strains induce gauge fields which shift the Rashba point and modify the Rashba parameter. This effect is equivalent to the application of in-plane magnetic fields. The out-of-plane strain, which is proportional to the electric polarization, is also shown to modify the Rashba parameter. Overall, our theory connects strain and spin splitting in ferroelectric Rashba materials, which will be important to understand the strain-induced variations in local Rashba parameters that will occur in practical applications.

cond-mat.mtrl-sci↗

arXiv2017

Two-dimensional Square Buckled Rashba Lead Chalcogenides

We propose the lead sulphide (PbS) monolayer as a 2D semiconductor with a large Rashba-like spin-orbit effect controlled by the out-of-plane buckling. The buckled PbS conduction band is found to possess Rashba-like dispersion and spin texture at the $M$ and $Γ$ points, with large effective Rashba parameters of $λ\sim5~$eV$Å~$ and $λ\sim1~$eV$~Å$, respectively. Using a tight-binding formalism, we show that the Rashba effect originates from the very large spin-orbit interaction and the hopping term that mixes the in-plane and out-of-plane $p$ orbitals of Pb and S atoms. The latter, which depends on the buckling angle, can be controlled by applying strain to vary the spin texture as well as the Rashba parameter at $Γ$ and $M$. Our density functional theory results together with tight-binding formalism provide a unifying framework for designing Rashba monolayers and for manipulating their spin properties.

cond-mat.mtrl-sci↗

arXiv2016

Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers

The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak energy into the visible range and below the off-Γ exciton peak. The lowest energy excitons in both materials are excited by light along the zigzag direction and have exciton binding energies of 1.05 eV and 0.4 eV, respectively, but despite the strong binding, the calculated binding energies are in agreement with a Mott-Wannier model.

cond-mat.mes-hall↗

arXiv2016

Multiferroic Two-Dimensional Materials

The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $α$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $\frac{1}{\sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.

cond-mat.mtrl-sci↗

arXiv2015

Tunneling Plasmonics in Bilayer Graphene

We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.

cond-mat.mes-hall↗

arXiv2015

Valleytronics in Tin (II) Sulfide

Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equivalent valleys are placed along two perpendicular axes, can be selected exclusively with linear polarized light, and can be separated using non-local electrical measurements.

cond-mat.mes-hall↗

arXiv2015

Exciton binding energies and luminescence of phosphorene under pressure

The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding strength. In this article, we consider from a theoretical point of view how the exciton stability and the resulting luminescence energy evolves under uniaxial strain. We find that the exciton binding energy can be as large as 0.87 eV in vacuum for 5% transverse strain, placing it amongst the highest for 2D materials. Further, the large shift of the luminescence peak and its linear dependence on strain suggest that it can be used to probe directly the strain state of single-layers.

cond-mat.mtrl-sci↗

arXiv2014

Collective modes in anisotropic double layer systems

We study collective modes in anisotropic double layer systems. To this end, we derive a zero-$T$ dynamic polarization function for a conductor with a paraboloidal dispersion. Following this, we demonstrate the dependence of the plasmonic modes on the relative orientation, doping, and system anisotropy.

cond-mat.mes-hall↗

arXiv2014

Phosphorene nanoribbons

Edge-induced gap states in finite phosphorene layers are examined using analytical models and density functional theory. The nature of such gap states depends on the direction of the cut. Armchair nanoribbons are insulating, whereas nanoribbons cut in the perpendicular direction (with zigzag and cliff-type edges) are metallic, unless they undergo a reconstruction or distortion with cell doubling, which opens a gap. All stable nanoribbons with unsaturated edges have gap states that can be removed by hydrogen passivation. Armchair nanoribbon edge states decay exponentially with the distance to the edge and can be described by a nearly-free electron model.

cond-mat.mes-hall↗

arXiv2014

Infrared nano-spectroscopy and imaging of collective superfluid excitations in conventional and high-temperature superconductors

We investigate near-field infrared spectroscopy and superfluid polariton imaging experiments on conventional and unconventional superconductors. Our modeling shows that near-field spectroscopy can measure the magnitude of the superconducting energy gap in Bardeen-Cooper-Schrieffer-like superconductors with nanoscale spatial resolution. We demonstrate how the same technique can measure the c-axis plasma frequency, and thus the c-axis superfluid density, of layered unconventional superconductors with a similar spatial resolution. Our modeling also shows that near-field techniques can image superfluid surface mode interference patterns near physical and electronic boundaries. We describe how these images can be used to extract the collective mode dispersion of anisotropic superconductors with sub-diffractional spatial resolution.

cond-mat.supr-con↗

arXiv2014

Tunable optical properties of multilayers black phosphorus thin films

Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.

cond-mat.mtrl-sci↗

arXiv2014

Excitons in anisotropic 2D semiconducting crystals

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

cond-mat.mes-hall↗

arXiv2014

Strain-induced gap modification in black phosphorus

The band structure of single-layer black phosphorus and the effect of strain are predicted using density functional theory and tight-binding models. Having determined the localized orbital composition of the individual bands from first-principles, we use the system symmetry to write down the effective low-energy Hamiltonian at the $Γ$ point. From numerical calculations and arguments based on the crystal structure of the material, we show that the deformation in the direction normal to the plane can be use to change the gap size and induce a semiconductor-metal transition.

cond-mat.mes-hall↗

arXiv2013

Electronic and plasmonic phenomena at graphene grain boundaries

Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

cond-mat.mes-hall↗

arXiv2013

Excitonic Collapse in Semiconducting Transition Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (STMDC) are two-dimensional (2D) crystals characterized by electron volt size band gaps, spin-orbit coupling (SOC), and d-orbital character of its valence and conduction bands. We show that these materials carry unique exciton quasiparticles (electron-hole bound states) with energy within the gap but which can ``collapse'' in the strong coupling regime by merging into the band structure continuum. The exciton collapse seems to be a generic effect in these 2D crystals.

cond-mat.mes-hall↗

arXiv2013

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplifications, the system still exhibits the key features seen in the experiment.

cond-mat.mes-hall↗

arXiv2012

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures.

cond-mat.mtrl-sci↗