arXiv subjects

A. Seredinski

Publications and source records attributed to A. Seredinski.

6 recordsLinked to original sources

arXiv2021

One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.

cond-mat.mes-hall↗

arXiv2020

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

cond-mat.mes-hall↗

arXiv2020

Zero-bias crossings and peculiar Shapiro maps in graphene Josephson junctions

The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to RF radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently utilized in primary voltage standards. Shapiro steps have also become one of the standard tools to probe junctions made in a variety of novel materials. Here, we study Shapiro steps in a widely tunable graphene-based Josephson junction. We investigate the variety of patterns that can be obtained in this well-understood system depending on the carrier density, temperature, RF frequency, and magnetic field. Although the patterns of Shapiro steps can change drastically when just one parameter is varied, the overall trends can be understood and the behaviors straightforwardly simulated. The resulting understanding may help in interpreting similar measurements in more complex materials.

cond-mat.mes-hall↗

arXiv2019

2$Φ_{0}$-periodic magnetic interference in ballistic graphene Josephson junctions

We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $Φ_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$Φ_{0}$ periodicity, similar to that predicted for topological Andreev bound states carrying a charge of $e$ instead of $2e$. This feature persists with increasing temperature, ruling out a non-sinusoidal current-phase relationship. It also persists in junctions in which sharp vacuum edges are eliminated. Our results indicate that the observed behavior may originate from an intrinsic property of ballistic graphene Josephson junctions, though the exact mechanism remains unclear.

cond-mat.mes-hall↗

arXiv2019

Chiral Quasiparticle Tunneling Between Quantum Hall Edges in Proximity with a Superconductor

We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough to reach the quantum Hall (QH) regime in graphene. In this regime, the device conductance is determined by edge states, plus the contribution from the constricted region. In particular, the constriction area can support supercurrents up to fields of ~2.5T. Moreover, enhanced conductance is observed through a wide range of magnetic fields and gate voltages. This additional conductance and the appearance of supercurrent is attributed to the tunneling between counter-propagating quantum Hall edge states along opposite superconducting contacts.

cond-mat.mes-hall↗

arXiv2016

Ballistic graphene Josephson junctions from the short to the long regime

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.

cond-mat.mes-hall↗