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A. Siddiki

Publications and source records attributed to A. Siddiki.

At least 55 records · Page 3Linked to original sources

The current polarization rectification of the integer quantized Hall effect

We report on our theoretical investigation considering the widths of quantized Hall plateaus (QHPs) depending on the density asymmetry induced by the large current within the out-of-linear response regime. We solve the Schrodinger equation within the Hartree type mean field approximation using Thomas Fermi Poisson nonlinear screening theory. We observe that the two dimensional electron system splits into compressible and incompressible regions for certain magnetic field intervals, where the Hall resistance is quantized and the longitudinal resistance vanishes, if an external current is imposed. We found that the strong current imposed, induces an asymmetry on the IS width depending linearly on the current intensity.

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Spatial Distribution of the Incompressible Strips at Aharonov-Bohm Interferometer

In this work, the edge physics of an Aharonov-Bohm interferometer (ABI) defined on a two dimensional electron gas, subject to strong perpendicular magnetic field B, is investigated. We solve the three dimensional Poisson equation using numerical techniques starting from the crystal growth parameters and surface image of the sample. The potential profiles of etched and gate defined geometries are compared and it is found that the etching yields a steeper landscape. The spatial distribution of the incompressible strips is investigated as a function of the gate voltage and applied magnetic field, where the imposed current is confined to. AB interference is investigated due to scattering processes between two incompressible "edge-states".

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Exchange-correlation enhancement of the Lande-g* factor in integer quantized Hall plateaus

We study the emergent role of many-body effects on a two dimensional electron gas (2DEG) within the Thomas-Fermi-Poisson approximation, including both the exchange and correlation interactions in the presence of a strong perpendicular magnetic field. It is shown that, the indirect interactions widen the odd-integer incompressible strips spatially, whereas the even-integer filling factors almost remain unaffected.

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Microscopic theory of the activated behavior of the quantized Hall effect

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of $2d\sim [1-10] μm$. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.

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Interaction mediated asymmetries of the quantized Hall effect

Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.

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Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We experimentally demonstrate that the asymmetry relations satisfied in the integer filling factor regime are valid also in the transition regime to non-integer filling factors, thereby suggesting a more general form of these asymmetry relations. A model is developed based on the screening theory of the integer quantum Hall effect that allows the self-consistent calculation of the local electron density and thereby the local current density including the current along incompressible stripes. The model, which also includes the so-called `static skin effect' to account for the current density distribution in the compressible regions, is capable of explaining the main experimental observations. Due to the existence of an incompressible-compressible transition in the bulk, the system behaves always metal-like in contrast to the conventional Landauer-Buettiker description, in which the bulk remains completely insulating throughout the quantized Hall plateau regime.

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Current direction induced rectification effect on (integer) quantized Hall plateaus

Current polarization induced rectification of the quantized Hall plateaus (QHPs) is studied within a Hartree type mean field approximation for asymmetrically depleted samples. We first investigate the existence of the current carrying incompressible strips (ISs), by solving the self-consistent equations, and their influence on magneto-transport (MT) properties. Next, the widths of the ISs are examined in terms of the steepness of the confining potential profile considering gate defined Hall bars. The corresponding MT coefficients are calculated using a local Ohm's law for a large fixed current and are compared for symmetric and asymmetric depleted samples. We predict that, the extend of the QHPs strongly depend on the current polarization, in the out of linear response regime, when considering asymmetrically depleted samples. Our results, concerning the extend of the QHPs depending on the current polarization are in contrast to the ones of the conventional theories of the integer quantized Hall effect (IQHE). We propose certain experimental conditions to test our theoretical predictions at high mobility, narrow samples.

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Realistic modelling of quantum point contacts subject to high magnetic fields and with current bias at out of linear response regime

The electron and current density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the non-linear regime.

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Distribution of an Ohmic current in the close vicinity of a quantum point contact

We present the essential findings of the screening theory of the integer quantum Hall effect (IQHE) considering a quantum point contact (QPC). Our approach is to solve the Poisson and the Schroedinger equations self-consistently, taking into account electron interactions, within a Hartree type approximation for a two dimensional electron gas (2DEG) subject to high perpendicular magnetic fields. The Coulomb interaction between the electrons separates 2DEG into two co-existing regions, namely quasi-metallic compressible and quasi-insulating incompressible regions, which exhibit peculiar screening and transport properties. In the presence of an external current, we show that this current is confined into the incompressible regions where the drift velocity is finite. In particular, we investigate the distribution of these incompressible strips and their relation with the quantum Hall plateaus considering a quasi 1D constriction, i.e. a QPC.

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Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured in the high temperature limit and cuts through the center of each Hall plateau. For high mobility samples we observe in linear response measurements, that this symmetry is broken and the classical Hall line cuts the plateaus not at the center but at higher magnetic fields near the edges of the plateaus. These experimental results confirm the unconventional predictions of a model for the quantum Hall effect taking into account mutual screening of charge carriers within the Hall bar. The theory is based on solving the Poisson and Schrödinger equations in a self-consistent manner.

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Local current distribution at large quantum dots (QDs): a self-consistent screening model

We report the implementation of the self-consistent Thomas-Fermi screening theory, together with the local Ohm's law to a quantum dot system in order to obtain local current distribution within the dot and at the leads. We consider a large dot (size $>700$ nm) defined by split gates, and coupled to the leads. Numerical calculations show that the non-dissipative current is confined to the incompressible strips. Due to the non-linear screening properties of the 2DES at low temperatures, this distribution is highly sensitive to external magnetic field. Our findings support the phenomenological models provided by the experimental studies so far, where the formation of the (direct) edge channels dominate the transport.

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Theoretical investigation of the electron velocity in quantum Hall bars, in the out of linear response regime

We report on our theoretical investigation of the electron velocity in (narrow) quantum-Hall systems, considering the out-of-linear-response regime. The electrostatic properties of the electron system are obtained by the Thomas-Fermi-Poisson nonlinear screening theory. The electron velocity distribution as a function of the lateral coordinate is obtained from the slope of the screened potential within the incompressible strips (ISs). The asymmetry induced by the imposed current on the ISs is investigated, as a function of the current intensity and impurity concentration. We find that the width of the IS on one side of the sample increases linearly with the intensity of the applied current and decreases with the impurity concentration.

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Where are the edge-states near the quantum point contacts? A self-consistent approach

In this work, we calculate the current distribution, in the close vicinity of the quantum point contacts (QPCs), taking into account the Coulomb interaction. In the first step, we calculate the bare confinement potential of a generic QPC and, in the presence of a perpendicular magnetic field, obtain the positions of the incompressible edge states (IES) taking into account electron-electron interaction within the Thomas-Fermi theory of screening. Using a local version of the Ohm's law, together with a relevant conductivity model, we also calculate the current distribution. We observe that, the imposed external current is confined locally into the incompressible strips. Our calculations demonstrate that, the inclusion of the electron-electron interaction, strongly changes the general picture of the transport through the QPCs.

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A self-consistent microscopic model of Coulomb interaction in a bilayer system as an origin of Drag Effect Phenomenon

In this work we implement the self-consistent Thomas-Fermi model that also incorporates a local conductivity model to an electron-electron bilayer system, in order to describe novel magneto-transport properties such as the Drag Phenomenon. The model can successfully account for the poor screening of the potential within the incompressible strips and its impact on the interlayer Coulomb interaction. An externally applied current in the active layer results in the tilting of the Landau levels and built-up of a Hall potential across the layer, which, in turn, induces a tilted potential profile in the passive layer as well. We investigate the effect of the current intensity, temperature, magnetic field, and unequal density of layers on the self-consistent density and potential profiles of the bilayer system.

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The self-consistent calculation of the edge states at quantum Hall effect (QHE) based Mach-Zehnder interferometers (MZI)

The spatial distribution of the incompressible edge states (IES) is obtained for a geometry which is topologically equivalent to an electronic Mach-Zehnder interferometer, taking into account the electron-electron interactions within a Hartree type self-consistent model. The magnetic field dependence of these IES is investigated and it is found that an interference pattern may be observed if two IES merge or come very close, near the quantum point contacts. Our calculations demonstrate that, being in a quantized Hall plateau does not guarantee observing the interference behavior.

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The effect of sample properties on the electron velocity in quantum Hall bars

We report on our theoretical investigation of the effects of the confining potential profile and sample size on the electron velocity distribution in (narrow) quantum-Hall systems. The electrostatic properties of the electron system are obtained by the Thomas-Fermi-Poisson nonlinear screening theory. The electron velocity distribution as a function of the lateral coordinate is obtained from the slope of the screened potential at the Fermi level and within the incompressible strips (ISs). We compare our findings with the recent experiments.

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Self-consistent Coulomb picture of an electron-electron bilayer system

In this work we implement the self-consistent Thomas-Fermi approach and a local conductivity model to an electron-electron bilayer system. The presence of an incompressible strip, originating from screening calculations at the top (or bottom) layer is considered as a source of an external potential fluctuation to the bottom (or top) layer. This essentially yields modifications to both screening properties and the magneto-transport quantities. The effect of the temperature, inter-layer distance and density mismatch on the density and the potential fluctuations are investigated. It is observed that the existence of the incompressible strips plays an important role simply due to their poor screening properties on both screening and the magneto-resistance (MR) properties. Here we also report and interpret the observed MR Hysteresis within our model.

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Thomas-Fermi-Poisson theory of screening for latterally confined and unconfined two-dimensional electron systems in strong magnetic fields

We examine within the self-consistent Thomas-Fermi-Poisson approach the low-temperature screening properties of a two-dimensional electron gas (2DEG) subjected to strong perpendicular magnetic fields. Numerical results for the unconfined 2DEG are compared with those for a simplified Hall bar geometry realized by two different confinement models. It is shown that in the strongly non-linear screening limit of zero temperature the total variation of the screened potential is related by simple analytical expressions to the amplitude of an applied harmonic modulation potential and to the strength of the magnetic field.

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