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A. Sipahigil

Publications and source records attributed to A. Sipahigil.

4 recordsLinked to original sources

Toward high-fidelity quantum information processing and quantum simulation with spin qubits and phonons

We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous dynamical decoupling techniques can substantially boost the coherence of the qubit states while increasing at the same time the variety of effective spin models that can be implemented in this way. Based on realistic models and detailed numerical simulations, we demonstrate that this decoupling technique can suppress gate errors by more than two orders of magnitude and enable gate infidelities below $\sim 10^{-4}$ for experimentally relevant noise parameters. Therefore, when generalized to phononic lattices with arrays of implanted defect centers, this approach offers a realistic path toward moderate- and large-scale quantum devices with spins and phonons, at a level of control that is competitive with other leading quantum-technology platforms.

quant-ph

Phonon networks with SiV centers in diamond waveguides

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-1D diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wavepackets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

quant-ph

State-selective intersystem crossing in nitrogen-vacancy centers

The intersystem crossing (ISC) is an important process in many solid-state atomlike impurities. For example, it allows the electronic spin state of the nitrogen-vacancy (NV) center in diamond to be initialized and read out using optical fields at ambient temperatures. This capability has enabled a wide array of applications in metrology and quantum information science. Here, we develop a microscopic model of the state-selective ISC from the optical excited state manifold of the NV center. By correlating the electron-phonon interactions that mediate the ISC with those that induce population dynamics within the NV center's excited state manifold and those that produce the phonon sidebands of its optical transitions, we quantitatively demonstrate that our model is consistent with recent ISC measurements. Furthermore, our model constrains the unknown energy spacings between the center's spin-singlet and spin-triplet levels. Finally, we discuss prospects to engineer the ISC in order to improve the spin initialization and readout fidelities of NV centers.

quant-ph

Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers

We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center's electronic structure. We discuss the model's implications for enhancing the NV center's performance as a room-temperature sensor.

quant-ph