arXiv subjects

A. Sola

Publications and source records attributed to A. Sola.

9 recordsLinked to original sources

arXiv2020

Measurement of the heat flux normalised spin Seebeck coefficient of thin films as a function of temperature

The spin Seebeck effect (SSE) has generated interest in the thermoelectric and magnetic communities for potential high efficiency energy harvesting applications, and spintronic communities as a source of pure spin current. To understand the underlying mechanisms requires characterisation of potential materials across a range of temperatures, however, for thin films the default measurement of an applied temperature gradient (across the sample) has been shown to be compromised by the presence of thermal resistances. Here, we demonstrate a method to perform low temperature SSE measurements where instead of monitoring the temperature gradient, the heat flux passing through the sample is measured using two calibrated heat flux sensors. This has the advantage of measuring the heat loss through the sample as well as providing a reliable method to normalise the SSE response of thin film samples. We demonstrate this method with an $\text{SiO}_{2}/\text{Fe}_{3}O_{4}/\text{Pt}$ sample, where a semiconducting-insulating transition occurs at the Verwey transition, $T_{\text{V}}$, of $\text{Fe}_{3}\text{O}_{4}$ and quantify the thermomagnetic response above and below $T_{\text{V}}$.

cond-mat.mes-hall↗

arXiv2018

Spincaloritronic measurements: a round robin comparison of the longitudinal spin Seebeck effect

The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck coefficient, the quantity that describes the strength of the spin Seebeck effect. This work stimulated the search for more reproducible measurement methods through the analysis of the systematic effects.

cond-mat.mes-hall↗

arXiv2017

Longitudinal spin Seebeck coefficient: heat flux vs. temperature difference method

The determination of the longitudinal spin Seebeck effect (LSSE) coefficient is currently plagued by a large uncertainty due to the poor reproducibility of the experimental conditions used in its measurement. In this work we present a detailed analysis of two different methods used for the determination of the LSSE coefficient. We have performed LSSE experiments in different laboratories, by using different setups and employing both the temperature difference method and the heat flux method. We found that the lack of reproducibility can be mainly attributed to the thermal contact resistance between the sample and the thermal baths which generate the temperature gradient. Due to the variation of the thermal resistance, we found that the scaling of the LSSE voltage to the heat flux through the sample rather than to the temperature difference across the sample greatly reduces the uncertainty. The characteristics of a single YIG/Pt LSSE device obtained with two different setups was $(1.143\pm0.007)\cdot 10^{-7}$ Vm/W and $(1.101\pm0.015)\cdot 10^{-7}$ Vm/W with the heat flux method and $(2.313\pm0.017)\cdot 10^{-7}$ V/K and $(4.956\pm0.005)\cdot 10^{-7}$ V/K with the temperature difference method. This shows that systematic errors can be considerably reduced with the heat flux method.

cond-mat.mes-hall↗

arXiv2016

Control of bulk superconductivity in a BCS superconductor by surface charge doping via electrochemical gating

The electrochemical gating technique is a powerful tool to tune the \textit{surface} electronic conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electronic screening. We show that, if applied to a metallic superconductor (NbN thin films), this approach allows observing reversible enhancements or suppressions of the \emph{bulk} superconducting transition temperature, which vary with the thickness of the films. These results are interpreted in terms of proximity effect, and indicate that the effective screening length depends on the induced charge density, becoming much larger than that predicted by standard screening theory at very high electric fields.

cond-mat.supr-con↗

arXiv2016

Weak Localization in Electric-Double-Layer Gated Few-layer Graphene

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $\sim10^{13}$cm$^{-2}$ to $\sim7 \cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.

cond-mat.mes-hall↗

arXiv2015

Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8x10^14 cm^(-2) has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T^2 component - that can be associated with electron-electron scattering - and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy.

cond-mat.mes-hall↗

arXiv2013

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached some units in 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (> 25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials.

cond-mat.mes-hall↗

arXiv2011

Large conductance modulation of gold thin films by huge charge injection via electrochemical gating

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n_2D as high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature. DeltaR/R' is a linear function of n_2D - as expected within a free-electron model - if the film is thick enough (> 25 nm), otherwise a tendency to saturation due to size effects is observed. The application of this technique to 2D materials will allow extending the field-effect experiments to a range of charge doping where giant conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

cond-mat.mes-hall↗

arXiv2006

Norm expansion along a zero variety in ${\mathbb C}^d$

The reproducing kernel function of a weighted Bergman space over domains in ${\mathbb C}^d$ is known explicitly in only a small number of instances. Here, we introduce a process of orthogonal norm expansion along a subvariety of codimension 1, which also leads to a series expansion of the reproducing kernel in terms of reproducing kernels defined on the subvariety. The problem of finding the reproducing kernel is thus reduced to the same kind of problem when one of the two entries is on the subvariety. A complete expansion of the reproducing kernel may be achieved in this manner. We carry this out in dimension $d=2$ for certain classes of weighted Bergman spaces over the bidisk (with the diagonal $z_1=z_2$ as subvariety) and the ball (with $z_2=0$ as subvariety), as well as for a weighted Bargmann-Fock space over ${\mathbb C}^2$ (with the diagonal $z_1=z_2$ as subvariety).

math.CV↗