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A. Soldner-Rembold

Publications and source records attributed to A. Soldner-Rembold.

2 recordsLinked to original sources

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (NDT). Because of the separation of detector and readout chip, different materials can be investigated and compared.

physics.ins-det

AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.

physics.ins-det