arXiv subjects

A. Srivastava

Publications and source records attributed to A. Srivastava.

28 records · Page 2Linked to original sources

arXiv2015

Unconventional Fermi surface in an insulating state

Insulators occur in more than one guise, a recent finding was a class of topological insulators, which host a conducting surface juxtaposed with an insulating bulk. Here we report the observation of an unusual insulating state with an electrically insulating bulk that simultaneously yields bulk quantum oscillations with characteristics of an unconventional Fermi liquid. We present quantum oscillation measurements of magnetic torque in high purity single crystals of the Kondo insulator SmB6, which reveal quantum oscillation frequencies characteristic of a large three-dimensional conduction electron Fermi surface similar to the metallic rare earth hexaborides such as PrB6 and LaB6. The quantum oscillation amplitude strongly increases at low temperatures, appearing strikingly at variance with conventional metallic behaviour.

cond-mat.str-el↗

arXiv2013

Anisotropic Magneto Resistance and Planar Hall Effect at the LaAlO$_3$/SrTiO$_3$ Heterointerfaces: Effect of Carrier Confinement on Magnetic Interactions

The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO$_3$/SrTiO$_3$ interface play a significant role in its emerging properties. Here we report a fourfold oscillation in the anisotropic magneto resistance (AMR) and the observation of planar Hall effect (PHE) at the LaAlO$_3$/SrTiO$_3$ heterointerface. We evaluate the carrier confinement effects on the AMR and find that the fourfold oscillation appears only for the case of 2DEG system while it is twofold for the 3D system. As the fourfold oscillation fits well to the phenomenological model for a cubic symmetry system, we attribute this oscillation to the anisotropy in the magnetic scattering arising from the interaction of electrons with the localized magnetic moments coupled to the crystal symmetry. The AMR behavior is further found to be sensitive to applied gate electric field, emphasizing the significance of spin-orbit coupling at the interface. These confinement effects suggest that the magnetic interactions are predominant at the interface, and the gate electric field modulation of AMR suggest the possible gate tunable magnetic interactions in these systems. The observed large PHE further indicates that the in plane nature of magnetic ordering arises from the in-plane Ti 3dxy orbitals.

cond-mat.str-el↗

arXiv2013

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T -1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.

cond-mat.mes-hall↗

arXiv2012

Unexpected Anisotropic Two Dimensional Electron Gas at the LaAlO3/SrTiO3 (110) Interface

The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the potential of complex oxides for novel electronics. The occurrence of the 2DEG is strongly believed to be driven by the polarization discontinuity (9) at the interface between the two oxides. In this scenario, the crystal orientation plays an important role and no conductivity would be expected for e.g., the interface between LaAlO3 and (110)-oriented SrTiO3, which should not have a polarization discontinuity (10, 11). Here, we report the observation of unexpected conductivity at the LaAlO3/SrTiO3 interface prepared on (110)-oriented SrTiO3. The conductivity was further found to be strongly anisotropic, with the ratio of the conductance along the different directions parallel to the substrate surface showing a remarkable dependence on the oxygen pressure during deposition. The conductance and its anisotropy are discussed based on the atomic structure at the interface, as revealed by Scanning Transmission Electron Microscopy (STEM) and further supported by density functional theory (DFT) calculations.

cond-mat.mtrl-sci↗

arXiv2011

Carrier freeze-out induced metal-insulator transition in oxygen deficient SrTiO3 films

We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy distribution in the thin film is expected to be uniform. By comparing the electrical properties with oxygen deficient bulk STO, it was found that the oxygen vacancies in bulk STO is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the oxygen deficient STO film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be re-excited by an electric field, Joule heating, and surprisingly also a large magnetic field.

cond-mat.mtrl-sci↗

arXiv2011

Study of transfer reaction channel in $^{12}$C + $^{27}$Al system

The 1p transfer channel in the $^{27}$Al($^{12}$C, $^{11}$B)$^{28}$Si reaction has been studied at E$_{lab}$ = 73, 81 and 85 MeV. The finite range distorted wave Born approximation calculations have been performed using phenomenological optical model potential to analyze the angular distributions for 3 transitions populating the 0.0, 1.78 and 4.62 MeV states of $^{28}$Si and 2 transitions populating the 2.12 and 4.44 MeV states of $^{11}$B via the $^{27}$Al($^{12}$C, $^{11}$B)$^{28}$Si reaction. The spectroscopic strengths as well as spectroscopic factors have been extracted for all the five states. The extracted strength values are compared with shell model calculations.

nucl-ex↗

arXiv2008

Direct Observation of Dark Excitons in Individual Carbon Nanotubes: Role of Local Environments

We report the direct observation of the spin-singlet dark excitonic state in individual single-walled carbon nanotubes through low-temperature micro-photoluminescence spectroscopy in magnetic fields. A magnetic field up to 5 T, applied along the nanotube axis, brightened the dark state, leading to the emergence of a new emission peak. The peak rapidly grew in intensity with increasing field at the expense of the originally-dominant bright exciton peak and finally became dominant at fields $>$3 T. This behavior, universally observed for more than 50 nanotubes of different chiralities, can be quantitatively explained through a model incorporating the Aharonov-Bohm effect and intervalley Coulomb mixing, unambiguously proving the existence of dark excitons. The directly measured dark-bright splitting values were 1-4 meV for tube diameters 1.0-1.3 nm. Scatter in the splitting value emphasizes the role of the local environment surrounding a nanotube in determining the excitonic fine structure of single-walled carbon nanotubes.

cond-mat.mes-hall↗

arXiv2004

Laser-Induced Above-Bandgap Transparency in GaAs

We report the observation of large ($\sim 40%$) laser-induced above-bandgap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrard laser pulses and its spectral shape is consistent with a laser-induced blue shift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating in particular that the amount of the band edge shift is approximately given by the ponderomtive potential.

cond-mat.mtrl-sci↗

arXiv2002

Light charged particle evaporation from hot ${31}^$P nucleus at E$^*$ ~ 60 MeV

The energy spectra of evaporated light charged particles (LCP) $α$, p, d and t have been measured in $7^$Li(47 MeV) + ${24}^$Mg and ${19}^$F(96 MeV)+ ${12}^$C reactions. Both the systems populate the same compound nucleus ${31}^$F at excitation energy E$^*$ ~ 60 MeV. It has been observed that the light particle spectra obtained in Li + Mg reaction follow standard statistical model prediction, whereas a deformed configuration of the compound nucleus is needed to explain the LCP spectra for F + C reaction, which has been attributed to the effect of larger input angular momentum in the case of ${19}^$F(96 MeV)+ ${12}^$C system.

nucl-ex↗

arXiv1998

Evaporation of alpha particles from $^31$P nucleus

The energy spectra of alpha particles have been measured in coincidence with the evaporation residues for the decay of the compound nucleus $^31$P produced in the reaction $^19$F (96 MeV) + $^12$C. The data have been compared with the predictions of the statistical model code CASCADE. It has been observed that significant deformation effect in the compound nucleus need to be considered in order to explain the shape of the evaporated alpha particle energy spectra.

nucl-ex↗